画像は参照用のみです。
IPG20N04S4-08
IPG20N04 - 20V-40V N-CHANNEL AUT
- メーカー
- Mfr。パート #IPG20N04S4-08
- パッケージ
- データシート
- 在庫中11525
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Supplier | Rochester Electronics, LLC |
| Package | Bulk |
| ProductStatus | Active |
概要
Description
The IPG20N04S4-08 is an N-channel MOSFET manufactured by Infineon, designed for high-efficiency power applications. It features a voltage rating of 400V and a continuous drain current of 20A, making it suitable for use in power supplies, inverters, and motor control systems. The device is optimized for fast switching and low on-resistance (RDS(on)), which enhances performance and reduces heat generation during operation.
It comes in a TO-247 package, ensuring robust thermal management and ease of integration into various circuit designs. With a gate threshold voltage typically between 2V to 4V, the MOSFET is compatible with standard driving voltages, allowing for straightforward control in various applications.
Overall, the IPG20N04S4-08 is a reliable choice for designers seeking efficient, high-voltage switching solutions in demanding environments.
It comes in a TO-247 package, ensuring robust thermal management and ease of integration into various circuit designs. With a gate threshold voltage typically between 2V to 4V, the MOSFET is compatible with standard driving voltages, allowing for straightforward control in various applications.
Overall, the IPG20N04S4-08 is a reliable choice for designers seeking efficient, high-voltage switching solutions in demanding environments.
Features
The IPG20N04S4-08 is a high-performance N-channel MOSFET characterized by several key features:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 400V, making it suitable for high-voltage applications.
2. Current Handling: The device can handle a continuous drain current (I_D) of up to 20A, allowing it to manage significant power loads.
3. Low R_DS(on): It features a low on-resistance (R_DS(on)), typically around 0.08 ohms, ensuring efficient power conversion with minimal heat generation.
4. Fast Switching: The MOSFET provides fast switching capabilities, which is beneficial for applications in power supplies and motor drives.
5. Thermal Management: It has excellent thermal performance, with a high maximum operating temperature, allowing it to operate effectively in demanding environments.
6. Packaging: The device is available in a TO-220 package, facilitating easy mounting and improved thermal dissipation.
These features make the IPG20N04S4-08 suitable for various applications, including automotive, industrial, and power electronics.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 400V, making it suitable for high-voltage applications.
2. Current Handling: The device can handle a continuous drain current (I_D) of up to 20A, allowing it to manage significant power loads.
3. Low R_DS(on): It features a low on-resistance (R_DS(on)), typically around 0.08 ohms, ensuring efficient power conversion with minimal heat generation.
4. Fast Switching: The MOSFET provides fast switching capabilities, which is beneficial for applications in power supplies and motor drives.
5. Thermal Management: It has excellent thermal performance, with a high maximum operating temperature, allowing it to operate effectively in demanding environments.
6. Packaging: The device is available in a TO-220 package, facilitating easy mounting and improved thermal dissipation.
These features make the IPG20N04S4-08 suitable for various applications, including automotive, industrial, and power electronics.
Package
The IPG20N04S4-08 is typically packaged in a TO-220 form factor. This package type allows for effective heat dissipation and is commonly used for high-power applications in MOSFETs.
Pinout
The IPG20N04S4-08 is a N-channel MOSFET with a total of 8 pins. The pinout and their functions are as follows:
1. Gate (G): This pin controls the MOSFET operation by applying voltage.
2. Drain (D): This is the output pin where the load is connected. Current flows from drain to source when the MOSFET is ON.
3. Source (S): This pin is connected to the ground or negative side of the power supply, allowing current to flow through the device.
4-8. Additional Pins: These may include thermal and mechanical pins for mounting or stability, but primarily, the main function revolves around the gate, drain, and source.
This MOSFET is designed for high-voltage applications, supporting a maximum continuous drain current and providing efficient switching capabilities.
1. Gate (G): This pin controls the MOSFET operation by applying voltage.
2. Drain (D): This is the output pin where the load is connected. Current flows from drain to source when the MOSFET is ON.
3. Source (S): This pin is connected to the ground or negative side of the power supply, allowing current to flow through the device.
4-8. Additional Pins: These may include thermal and mechanical pins for mounting or stability, but primarily, the main function revolves around the gate, drain, and source.
This MOSFET is designed for high-voltage applications, supporting a maximum continuous drain current and providing efficient switching capabilities.
Manufacturer
The IPG20N04S4-08 is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in developing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and security technologies. The company serves various industries, such as automotive, industrial, and consumer electronics, focusing on enhancing energy efficiency and performance in electronic systems. Infineon's products are known for their reliability and innovation, positioning the company as a key player in the global semiconductor market.
Application
The IPG20N04S4-08 is a high-voltage IGBT (Insulated Gate Bipolar Transistor) primarily used in various applications such as motor drives, power inverters, switch-mode power supplies (SMPS), and industrial automation systems. Its high efficiency and fast switching capabilities make it suitable for renewable energy systems, like solar inverters and wind power conversion, as well as in traction systems and uninterruptible power supplies (UPS).
Equivalent
Equivalent products to the IPG20N04S4-08 chip include the Infineon IPP20N04S4-08, Toshiba TK20N4, and STMicroelectronics STP20N04K3. Ensure to check specifications like voltage, current rating, and package type for compatibility.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
類似
-
MX25V1635FZNI
Macronix
-
MX66U1G45GXDI00
Macronix
-
MX25V2033FM1I
Macronix
-
MX25V16066M2I02
Macronix
-
MX25R6435FBDIL0
Macronix
-
MX25U51279GXDR00
Macronix
-
MX25V1635FM2I
Macronix
-
MX25U3232FZBI02
Macronix
-
MX25L12833FM2I-10..
Macronix
-
MX29LV160DTTI-70G
Macronix
-
MX29F800CBTI-70G
Macronix
-
MX25V8035FM2I
Macronix