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IPD90P04P4L-04
MOSFETs P-Ch -40V -90A DPAK-2 OptiMOS-P2
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- Mfr。パート #IPD90P04P4L-04
- パッケージ
- データシート IPD90P04P4L-04 DataSheet
- 在庫中12818
100% オリジナル &新しい
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365日の保証
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仕様
| Packaging | MouseReel |
| Standard Pack Qty | 2500 |
概要
Description
IPD90P04P4L-04 is a high-performance power MOSFET designed for various applications, including power management and switching applications in automotive, industrial, and consumer electronics. With a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) rating of 90A, it offers low on-resistance, which enhances efficiency and reduces heat dissipation during operation. The device is packaged in a robust configuration that aids in thermal management, making it suitable for high-density electronic designs.
Additionally, it features fast switching capabilities, allowing for efficient operation in high-frequency applications. Its performance characteristics enable it to be used in circuits such as DC-DC converters, motor drivers, and power supplies. The IPD90P04P4L-04’s reliability and efficiency make it a popular choice for engineers seeking to optimize power conversion and minimize losses in electronic systems.
Additionally, it features fast switching capabilities, allowing for efficient operation in high-frequency applications. Its performance characteristics enable it to be used in circuits such as DC-DC converters, motor drivers, and power supplies. The IPD90P04P4L-04’s reliability and efficiency make it a popular choice for engineers seeking to optimize power conversion and minimize losses in electronic systems.
Features
The IPD90P04P4L-04 is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: Rated for a maximum drain-source voltage (V_DS) of 40V, making it suitable for various power management applications.
2. Current Handling: With a continuous drain current (I_D) up to 90A, it can efficiently handle high load conditions.
3. R_DS(on): Low on-resistance (R_DS(on)) of approximately 4 mΩ, which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage (V_GS(th)): Typically ranges from 2V to 4V, allowing for easy driving from standard logic levels.
5. Package: Offered in a TO-220 package, providing good thermal performance and ease of heat dissipation.
6. Switching Speed: Fast switching capabilities, making it suitable for applications like DC-DC converters, power supplies, and motor drivers.
These features make the IPD90P04P4L-04 an ideal choice for high-efficiency, high-power electronic circuits.
1. Voltage Rating: Rated for a maximum drain-source voltage (V_DS) of 40V, making it suitable for various power management applications.
2. Current Handling: With a continuous drain current (I_D) up to 90A, it can efficiently handle high load conditions.
3. R_DS(on): Low on-resistance (R_DS(on)) of approximately 4 mΩ, which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage (V_GS(th)): Typically ranges from 2V to 4V, allowing for easy driving from standard logic levels.
5. Package: Offered in a TO-220 package, providing good thermal performance and ease of heat dissipation.
6. Switching Speed: Fast switching capabilities, making it suitable for applications like DC-DC converters, power supplies, and motor drivers.
These features make the IPD90P04P4L-04 an ideal choice for high-efficiency, high-power electronic circuits.
Package
The IPD90P04P4L-04 is packaged in a DPAK (also known as TO-252) format. This package type is commonly used for surface mount applications and provides good thermal performance and electrical efficiency.
Pinout
The IPD90P04P4L-04 is a N-channel MOSFET with a pin count of 5. The functions of the pins are as follows:
1. Gate (G): This pin is used to control the MOSFET's operation. A voltage applied here turns the device on or off.
2. Drain (D): The main current path where the load is connected. This pin allows current to flow from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to the ground or the lower potential side of the circuit. It is the return path for the current flowing through the drain.
4. Body (B): This pin is internally connected to the source and is often used for protection against overvoltage conditions.
5. Thermal Pad (TP): While not a pin in the traditional sense, this pad is used for heat dissipation to manage thermal performance.
The device is designed for power applications, offering low on-resistance and high current handling capabilities.
1. Gate (G): This pin is used to control the MOSFET's operation. A voltage applied here turns the device on or off.
2. Drain (D): The main current path where the load is connected. This pin allows current to flow from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to the ground or the lower potential side of the circuit. It is the return path for the current flowing through the drain.
4. Body (B): This pin is internally connected to the source and is often used for protection against overvoltage conditions.
5. Thermal Pad (TP): While not a pin in the traditional sense, this pad is used for heat dissipation to manage thermal performance.
The device is designed for power applications, offering low on-resistance and high current handling capabilities.
Manufacturer
The IPD90P04P4L-04 is manufactured by Infineon Technologies AG, a prominent global semiconductor manufacturer based in Germany. Infineon specializes in a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors, primarily targeting automotive, industrial, and consumer electronics applications. They are well-known for their innovations in power management and efficiency, contributing significantly to advancements in electric vehicles, renewable energy systems, and smart technologies.
Application
The IPD90P04P4L-04 is a high-performance N-channel MOSFET used in various applications including power management, DC-DC converters, motor drivers, and power switching in consumer electronics. Its low on-resistance and high current capability make it suitable for efficient power delivery in automotive systems, renewable energy systems, and telecom equipment. Additionally, it can be found in industrial automation and lighting control systems.
Equivalent
The IPD90P04P4L-04 is a N-channel MOSFET. Equivalent products include the IRF3205, STP75NF75, and BUK954R-75. Always verify specifications like voltage, current, and R_DS(on) before substitution.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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