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IPD90N06S405ATMA2
MOSFET N-CH 60V 90A TO252-31
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- Mfr。パート #IPD90N06S405ATMA2
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- データシート IPD90N06S405ATMA2 DataSheet
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仕様
| Supplier | Infineon Technologies,Rochester Electronics, LLC |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 90A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 5.1mOhm @ 90A, 10V |
| Vgs(th)(Max)@Id | 4V @ 60µA |
| GateCharge(Qg)(Max)@Vgs | 81 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 6500 pF @ 25 V |
| PowerDissipation(Max) | 107W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PG-TO252-3-11 |
概要
Description
The IPD90N06S405ATMA2 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications in power management. It features a low on-resistance (R_DS(on)), which minimizes power loss and heat generation when conducting current. This device is typically used in power supplies, motor drivers, and other applications requiring efficient switching.
Key specifications include a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of 90A, making it suitable for high-current applications. The MOSFET is packaged in a TO-220 format, allowing for effective thermal management.
The IPD90N06S405ATMA2 also offers fast switching capabilities, which enhance overall system performance. It is commonly employed in both consumer and industrial electronics, where reliability and efficiency are crucial. When selecting a MOSFET, factors such as gate voltage, switching speed, and thermal performance should be considered to ensure optimal operation in the intended application.
Key specifications include a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of 90A, making it suitable for high-current applications. The MOSFET is packaged in a TO-220 format, allowing for effective thermal management.
The IPD90N06S405ATMA2 also offers fast switching capabilities, which enhance overall system performance. It is commonly employed in both consumer and industrial electronics, where reliability and efficiency are crucial. When selecting a MOSFET, factors such as gate voltage, switching speed, and thermal performance should be considered to ensure optimal operation in the intended application.
Features
The IPD90N06S405ATMA2 is an N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: Capable of handling up to 60V, making it suitable for various power supply applications.
2. Current Rating: Supports continuous drain current up to 90A, which allows for high load capabilities.
3. RDS(on): Low on-resistance (typically around 4.5 mΩ), resulting in reduced power losses and improved thermal performance.
4. Fast Switching: Designed for high-speed switching applications, enhancing efficiency in converter circuits.
5. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and mounting.
6. Gate Threshold Voltage: Low gate threshold for enhanced drive capability.
7. Applications: Commonly used in power supplies, motor control, and other applications requiring efficient switching.
These features make the IPD90N06S405ATMA2 suitable for modern power electronic designs that demand high performance and efficiency.
1. Voltage Rating: Capable of handling up to 60V, making it suitable for various power supply applications.
2. Current Rating: Supports continuous drain current up to 90A, which allows for high load capabilities.
3. RDS(on): Low on-resistance (typically around 4.5 mΩ), resulting in reduced power losses and improved thermal performance.
4. Fast Switching: Designed for high-speed switching applications, enhancing efficiency in converter circuits.
5. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and mounting.
6. Gate Threshold Voltage: Low gate threshold for enhanced drive capability.
7. Applications: Commonly used in power supplies, motor control, and other applications requiring efficient switching.
These features make the IPD90N06S405ATMA2 suitable for modern power electronic designs that demand high performance and efficiency.
Package
The IPD90N06S405ATMA2 is packaged in a DPAK (TO-252) format, which is a surface mount package designed for power applications, allowing for efficient thermal performance and space-saving on PCBs.
Pinout
The IPD90N06S405ATMA2 is a N-channel MOSFET with a total of 5 pins. Its primary function is to control the flow of electrical current in various applications, such as power management and switching.
Here are the pin functions:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate turns the device on or off.
2. Drain (D): The drain pin is where the current enters the MOSFET when it is in the on-state.
3. Source (S): The source pin is where the current exits the MOSFET.
4. Body Diode (integrated): This internal component allows current to flow in the reverse direction when the MOSFET is off, providing protection in certain applications.
5. Tab (Thermal Pad): This is typically used for heat dissipation and may connect to the source or be electrically isolated.
The device is designed for high efficiency and low on-resistance applications, making it suitable for various electronic circuits.
Here are the pin functions:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate turns the device on or off.
2. Drain (D): The drain pin is where the current enters the MOSFET when it is in the on-state.
3. Source (S): The source pin is where the current exits the MOSFET.
4. Body Diode (integrated): This internal component allows current to flow in the reverse direction when the MOSFET is off, providing protection in certain applications.
5. Tab (Thermal Pad): This is typically used for heat dissipation and may connect to the source or be electrically isolated.
The device is designed for high efficiency and low on-resistance applications, making it suitable for various electronic circuits.
Manufacturer
The IPD90N06S405ATMA2 is manufactured by Infineon Technologies, a global semiconductor company headquartered in Neubiberg, Germany. Infineon specializes in the development and production of a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and automotive electronics. The company serves various sectors, such as automotive, industrial, and consumer electronics, focusing on energy efficiency, mobility, and security. Infineon is known for its innovative technologies and commitment to sustainability, making it a key player in the global semiconductor market.
Application
The IPD90N06S405ATMA2 is a N-channel MOSFET primarily used in power management applications such as DC-DC converters, motor drives, and power supplies. Its high current and voltage ratings make it suitable for applications in industrial automation, automotive systems, and consumer electronics. Additionally, it can be utilized in switching applications and for driving loads in various electronic circuits.
Equivalent
The IPD90N06S405ATMA2 is an N-channel MOSFET. Equivalent products include the STP90NF06, IRF540, and BUK956-100A. Ensure to check parameters like V_DS, I_D, R_DS(on), and gate threshold voltage for compatibility in your specific application.
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