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IPD90N06S4-04
MOSFETs N-Ch 60V 90A DPAK-2 OptiMOS-T2
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- Mfr。パート #IPD90N06S4-04
- パッケージ
- データシート IPD90N06S4-04 DataSheet
- 在庫中14790
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仕様
| Packaging | MouseReel |
| Standard Pack Qty | 2500 |
概要
Description
The IPD90N06S4-04 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It features a maximum drain-source voltage (Vds) of 60V, a continuous drain current (Id) rating of 90A, and a low on-resistance of approximately 4.5 mΩ, making it suitable for power management in automotive, industrial, and consumer electronics.
Key characteristics include a fast switching speed and thermal performance, allowing it to handle significant power loads effectively while minimizing heat generation. The device typically comes in a TO-220 or similar package, facilitating easy thermal dissipation and mounting on PCBs.
The IPD90N06S4-04 is often used in applications such as DC-DC converters, motor drivers, and power supplies, where efficiency and reliability are crucial. Its robust design and specifications make it a popular choice among engineers looking to optimize power delivery and management in various electronic circuits.
Key characteristics include a fast switching speed and thermal performance, allowing it to handle significant power loads effectively while minimizing heat generation. The device typically comes in a TO-220 or similar package, facilitating easy thermal dissipation and mounting on PCBs.
The IPD90N06S4-04 is often used in applications such as DC-DC converters, motor drivers, and power supplies, where efficiency and reliability are crucial. Its robust design and specifications make it a popular choice among engineers looking to optimize power delivery and management in various electronic circuits.
Features
The IPD90N06S4-04 is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for various power applications.
2. Current Handling: The device can handle a continuous drain current (I_D) of up to 90A, allowing for significant power delivery.
3. R_DS(on): It boasts a low on-resistance of about 4 mΩ, which minimizes power loss and heat generation during operation.
4. Fast Switching: The MOSFET offers fast switching speeds, beneficial for applications in power management and DC-DC converters.
5. Package Type: It typically comes in a TO-220 package, facilitating effective heat dissipation and easy mounting.
6. Temperature Range: Designed to operate effectively across a wide temperature range, enhancing reliability in various environments.
These features make the IPD90N06S4-04 ideal for applications in automotive, industrial, and consumer electronics where efficiency and performance are critical.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for various power applications.
2. Current Handling: The device can handle a continuous drain current (I_D) of up to 90A, allowing for significant power delivery.
3. R_DS(on): It boasts a low on-resistance of about 4 mΩ, which minimizes power loss and heat generation during operation.
4. Fast Switching: The MOSFET offers fast switching speeds, beneficial for applications in power management and DC-DC converters.
5. Package Type: It typically comes in a TO-220 package, facilitating effective heat dissipation and easy mounting.
6. Temperature Range: Designed to operate effectively across a wide temperature range, enhancing reliability in various environments.
These features make the IPD90N06S4-04 ideal for applications in automotive, industrial, and consumer electronics where efficiency and performance are critical.
Package
The IPD90N06S4-04 is typically packaged in a TO-220 form factor. This package type is designed for efficient heat dissipation and ease of handling in power applications.
Pinout
The IPD90N06S4-04 is a N-channel MOSFET with a total of 4 pins. Its pin configuration and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin connects to the load and is where the current exits the MOSFET.
3. Source (S): This pin connects to the ground or negative side of the power supply, providing a return path for the current.
The IPD90N06S4-04 is designed for high-performance applications, featuring low on-resistance and fast switching capabilities, making it suitable for use in power management and switching applications.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin connects to the load and is where the current exits the MOSFET.
3. Source (S): This pin connects to the ground or negative side of the power supply, providing a return path for the current.
The IPD90N06S4-04 is designed for high-performance applications, featuring low on-resistance and fast switching capabilities, making it suitable for use in power management and switching applications.
Manufacturer
The IPD90N06S4-04 is manufactured by Infineon Technologies, a leading global semiconductor company based in Germany. Infineon specializes in designing and producing a wide range of semiconductor and system solutions, primarily focusing on automotive, industrial, and security applications. Their products include power semiconductors, microcontrollers, sensors, and more, catering to various sectors such as automotive electronics, renewable energy, and IoT (Internet of Things). Infineon is recognized for its innovation and commitment to energy efficiency and sustainability.
Application
The IPD90N06S4-04 is an N-channel MOSFET commonly used in power management applications. Its key application areas include DC-DC converters, motor control circuits, power supplies, and lighting control systems. Its high current capability and low on-resistance make it suitable for efficient switching in automotive, industrial, and consumer electronics applications.
Equivalent
The IPD90N06S4-04 is a N-channel MOSFET. Equivalent products include the IRF540, STP40NF06, and BUK954R-40. When selecting a substitute, ensure similar voltage ratings, current handling, and RDS(on) specifications for optimal compatibility. Always verify datasheets for precise attributes.
出荷
出荷方法私たち
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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