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IPD90N04S4-03
MOSFETs N-Ch 40V 90A DPAK-2 OptiMOS-T2
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- Mfr。パート #IPD90N04S4-03
- パッケージ
- データシート IPD90N04S4-03 DataSheet
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仕様
| Packaging | MouseReel |
| Standard Pack Qty | 2500 |
概要
Description
The IPD90N04S4-03 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. With a maximum drain-source voltage (Vds) of 40V and a continuous drain current (Id) rating of 90A, it is suitable for power management in various electronic circuits, including power supplies and motor drivers.
This MOSFET features a low on-resistance (Rds(on)), which minimizes power loss during operation, contributing to improved thermal performance and energy efficiency. It is housed in a TO-220 package, facilitating effective heat dissipation. The device's fast switching capabilities make it ideal for applications requiring rapid on-off cycling.
The IPD90N04S4-03 is commonly utilized in automotive, industrial, and consumer electronics, where reliability and performance are crucial. Its combination of high current handling, low Rds(on), and robustness makes it a popular choice for engineers designing efficient power solutions.
This MOSFET features a low on-resistance (Rds(on)), which minimizes power loss during operation, contributing to improved thermal performance and energy efficiency. It is housed in a TO-220 package, facilitating effective heat dissipation. The device's fast switching capabilities make it ideal for applications requiring rapid on-off cycling.
The IPD90N04S4-03 is commonly utilized in automotive, industrial, and consumer electronics, where reliability and performance are crucial. Its combination of high current handling, low Rds(on), and robustness makes it a popular choice for engineers designing efficient power solutions.
Features
The IPD90N04S4-03 is an N-channel MOSFET designed for high-performance power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, suitable for low-voltage applications.
2. Current Rating: Capable of handling a continuous drain current (I_D) of up to 90A, making it ideal for high-current applications.
3. On-Resistance: It offers a low on-resistance (R_DS(on)) of approximately 4 mΩ at a gate-source voltage (V_GS) of 10V, which helps in reducing power losses.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easier drive with standard logic levels.
5. Package Type: Typically available in a TO-220 package, providing efficient thermal dissipation.
6. Fast Switching: Designed for fast switching applications, enhancing efficiency in power conversion circuits.
These features make the IPD90N04S4-03 suitable for use in DC-DC converters, motor drives, and other high-efficiency power management systems.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, suitable for low-voltage applications.
2. Current Rating: Capable of handling a continuous drain current (I_D) of up to 90A, making it ideal for high-current applications.
3. On-Resistance: It offers a low on-resistance (R_DS(on)) of approximately 4 mΩ at a gate-source voltage (V_GS) of 10V, which helps in reducing power losses.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easier drive with standard logic levels.
5. Package Type: Typically available in a TO-220 package, providing efficient thermal dissipation.
6. Fast Switching: Designed for fast switching applications, enhancing efficiency in power conversion circuits.
These features make the IPD90N04S4-03 suitable for use in DC-DC converters, motor drives, and other high-efficiency power management systems.
Package
The IPD90N04S4-03 is typically available in a TO-220 package type. This package provides good thermal performance and is suitable for power applications.
Pinout
The IPD90N04S4-03 is a N-channel MOSFET with a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin controls the MOSFET's conduction state. By applying a voltage to this pin, the MOSFET can be turned on or off.
2. Drain (D): This pin is where the current enters the MOSFET when it is in the 'on' state. It connects to the load or the power supply.
3. Source (S): This pin is where the current exits the MOSFET. It is typically connected to ground or the negative side of the circuit.
4. Body Diode (integrated): The device includes an intrinsic body diode between the Drain and Source, allowing current to flow in the reverse direction, which is useful for certain applications.
5. Thermal Pad (if applicable): Some packages may have a thermal pad for enhanced heat dissipation.
The IPD90N04S4-03 is designed for high efficiency and is commonly used in power management applications.
1. Gate (G): This pin controls the MOSFET's conduction state. By applying a voltage to this pin, the MOSFET can be turned on or off.
2. Drain (D): This pin is where the current enters the MOSFET when it is in the 'on' state. It connects to the load or the power supply.
3. Source (S): This pin is where the current exits the MOSFET. It is typically connected to ground or the negative side of the circuit.
4. Body Diode (integrated): The device includes an intrinsic body diode between the Drain and Source, allowing current to flow in the reverse direction, which is useful for certain applications.
5. Thermal Pad (if applicable): Some packages may have a thermal pad for enhanced heat dissipation.
The IPD90N04S4-03 is designed for high efficiency and is commonly used in power management applications.
Manufacturer
The IPD90N04S4-03 is manufactured by Infineon Technologies, a leading semiconductor company based in Germany. Infineon specializes in the design and production of a wide range of semiconductor products, including power management, automotive, and industrial solutions. The company is known for its innovations in power electronics, microcontrollers, and sensors, catering to various sectors such as automotive, industrial, and consumer electronics. Infineon aims to provide efficient and sustainable solutions that enhance the performance and energy efficiency of electronic devices.
Application
The IPD90N04S4-03 is an N-channel MOSFET commonly used in applications such as power management, motor control, DC-DC converters, and switch-mode power supplies. Its low on-resistance and high-speed switching capabilities make it suitable for automotive applications, industrial equipment, and consumer electronics, where efficient power handling and thermal performance are critical.
Equivalent
The IPD90N04S4-03 is a N-channel MOSFET. Equivalent products include the Infineon BSC090N04LS and the STMicroelectronics STP90NF04. Other alternatives may include the Vishay Si7457DP and the ON Semiconductor NTP90N04. Always verify specifications such as drain-source voltage, current rating, and Rds(on) for compatibility.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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