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IPD75N04S4-06
IPD75N04 - 20V-40V N-CHANNEL AUT
- メーカー
- Mfr。パート #IPD75N04S4-06
- パッケージ
- データシート
- 在庫中26611
100% オリジナル &新しい
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365日の保証
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仕様
| Supplier | Rochester Electronics, LLC |
| Package | Bulk |
| Series | OptiMOS™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 75A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 5.9mOhm @ 75A, 10V |
| Vgs(th)(Max)@Id | 4V @ 26µA |
| GateCharge(Qg)(Max)@Vgs | 32 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 2550 pF @ 25 V |
| PowerDissipation(Max) | 58W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PG-TO252-3-313 |
概要
Description
The IPD75N04S4-06 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-performance applications. It features a low on-resistance of 4 mΩ, allowing for efficient power management with minimal heat generation. This MOSFET has a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) of 75A, making it suitable for use in power supplies, motor drives, and other high-current applications.
The device is housed in a TO-220 package, facilitating effective heat dissipation and ease of mounting on heat sinks. Its fast switching capabilities enhance performance in high-frequency applications, contributing to improved efficiency. The IPD75N04S4-06 also includes a robust gate oxide, ensuring reliability in demanding environments. Overall, it is ideal for designers seeking to optimize power efficiency and thermal management in their circuits.
The device is housed in a TO-220 package, facilitating effective heat dissipation and ease of mounting on heat sinks. Its fast switching capabilities enhance performance in high-frequency applications, contributing to improved efficiency. The IPD75N04S4-06 also includes a robust gate oxide, ensuring reliability in demanding environments. Overall, it is ideal for designers seeking to optimize power efficiency and thermal management in their circuits.
Features
The IPD75N04S4-06 is a N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, making it suitable for various power applications.
2. Current Rating: The device can handle continuous drain current (I_D) of up to 75A, allowing it to support high-load conditions.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 6.5 mΩ at a V_GS of 10V, which enhances efficiency and reduces power losses.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2V to 4V, facilitating easy drive with standard logic levels.
5. Package: Typically available in a TO-220 or similar package, enabling effective heat dissipation.
6. Fast Switching: Ideal for applications requiring fast switching speeds, such as in DC-DC converters and motor control.
Overall, the IPD75N04S4-06 is suitable for automotive, industrial, and consumer electronics applications where efficiency and robustness are critical.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, making it suitable for various power applications.
2. Current Rating: The device can handle continuous drain current (I_D) of up to 75A, allowing it to support high-load conditions.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 6.5 mΩ at a V_GS of 10V, which enhances efficiency and reduces power losses.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2V to 4V, facilitating easy drive with standard logic levels.
5. Package: Typically available in a TO-220 or similar package, enabling effective heat dissipation.
6. Fast Switching: Ideal for applications requiring fast switching speeds, such as in DC-DC converters and motor control.
Overall, the IPD75N04S4-06 is suitable for automotive, industrial, and consumer electronics applications where efficiency and robustness are critical.
Package
The IPD75N04S4-06 is packaged in a TO-220 format. This package type is commonly used for power MOSFETs, providing efficient heat dissipation and easy mounting options for various applications.
Pinout
The IPD75N04S4-06 is an N-channel MOSFET with a total of 5 pins. Its primary functions include acting as a switch or amplifier in electronic circuits. The pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET's operation by applying a voltage to turn it on or off.
2. Drain (D): The current flows out of this pin when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or negative supply in most applications, allowing current to flow through the device.
The specific arrangement of these pins can vary based on the packaging, so it’s important to refer to the datasheet for precise pin assignments and functionalities. The IPD75N04S4-06 is designed for applications that require high efficiency and low on-resistance, commonly used in power management systems.
1. Gate (G): This pin controls the MOSFET's operation by applying a voltage to turn it on or off.
2. Drain (D): The current flows out of this pin when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or negative supply in most applications, allowing current to flow through the device.
The specific arrangement of these pins can vary based on the packaging, so it’s important to refer to the datasheet for precise pin assignments and functionalities. The IPD75N04S4-06 is designed for applications that require high efficiency and low on-resistance, commonly used in power management systems.
Manufacturer
The IPD75N04S4-06 is manufactured by Infineon Technologies AG. Infineon is a semiconductor manufacturer based in Germany, specializing in a wide range of products including power semiconductors, microcontrollers, and sensors. The company focuses on providing solutions for automotive, industrial, and IoT applications, among others. Infineon is well-known for its innovations in power management and energy efficiency, catering to various sectors such as automotive electronics, renewable energy, and smart grid technologies.
Application
The IPD75N04S4-06 is a N-channel MOSFET commonly used in applications such as power management, motor control, DC-DC converters, and synchronous rectification. Its features make it suitable for high-efficiency switching applications in automotive, industrial, and consumer electronics. It is ideal for low-voltage and high-current scenarios due to its low on-resistance and fast switching capabilities.
Equivalent
Equivalent products to the IPD75N04S4-06 MOSFET include the IRF3205, IRF3204, and STP75NF06. These parts share similar electrical characteristics such as voltage and current ratings. Always verify key parameters like R_DS(on), V_GS, and maximum ratings to ensure compatibility in your specific application.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
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