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IPD70R360P7SAUMA1
MOSFET N-CH 700V 12.5A TO252-3
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- Mfr。パート #IPD70R360P7SAUMA1
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- データシート IPD70R360P7SAUMA1 DataSheet
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仕様
| Series | CoolMOS™ P7 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 700 V |
| Current - Continuous Drain (Id) @ 25°C | 12.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 3A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs | 16.4 nC @ 10 V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 517 pF @ 400 V |
| Power Dissipation (Max) | 59.4W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3 |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Base Product Number | IPD70 |
概要
Description
The IPD70R360P7SAUMA1 is a high-performance N-channel MOSFET designed for power applications, specifically optimized for automotive and industrial use. It is part of the Infineon Technologies’ OptiMOS® series, known for its low on-resistance (RDS(on)) and high efficiency, making it suitable for various power management tasks, such as inverters, motor drives, and DC-DC converters.
Key specifications include a maximum continuous drain-source voltage (VDS) of 360V and a continuous drain current (ID) rating of 70A, making it capable of handling significant power loads. Its low thermal resistance ensures efficient heat dissipation, enhancing reliability and performance.
The device features advanced packaging, which contributes to improved thermal management and ease of integration into various circuits. Its robust design and high-speed switching capabilities facilitate optimal performance in demanding environments. As a result, the IPD70R360P7SAUMA1 is an excellent choice for applications requiring high efficiency and reliability in power conversion and control.
Key specifications include a maximum continuous drain-source voltage (VDS) of 360V and a continuous drain current (ID) rating of 70A, making it capable of handling significant power loads. Its low thermal resistance ensures efficient heat dissipation, enhancing reliability and performance.
The device features advanced packaging, which contributes to improved thermal management and ease of integration into various circuits. Its robust design and high-speed switching capabilities facilitate optimal performance in demanding environments. As a result, the IPD70R360P7SAUMA1 is an excellent choice for applications requiring high efficiency and reliability in power conversion and control.
Features
The IPD70R360P7SAUMA1 is an N-channel power MOSFET from Infineon, designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 360V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling a continuous drain current (I_D) of up to 70A, ensuring robust performance in demanding conditions.
3. R_DS(on): The on-resistance is low, typically around 0.175 ohms at a gate voltage of 10V, which helps reduce power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easy drive compatibility.
5. Thermal Management: It features a TO-247 package for improved thermal dissipation, supporting higher power applications.
6. Fast Switching: Designed for fast switching capabilities, making it ideal for use in converters and inverters.
These features make the IPD70R360P7SAUMA1 suitable for a variety of applications, including automotive, industrial, and renewable energy systems.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 360V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling a continuous drain current (I_D) of up to 70A, ensuring robust performance in demanding conditions.
3. R_DS(on): The on-resistance is low, typically around 0.175 ohms at a gate voltage of 10V, which helps reduce power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easy drive compatibility.
5. Thermal Management: It features a TO-247 package for improved thermal dissipation, supporting higher power applications.
6. Fast Switching: Designed for fast switching capabilities, making it ideal for use in converters and inverters.
These features make the IPD70R360P7SAUMA1 suitable for a variety of applications, including automotive, industrial, and renewable energy systems.
Package
The IPD70R360P7SAUMA1 is packaged in a TO-247 format. This package type is designed for high-power applications, providing efficient thermal management and robust performance.
Pinout
The IPD70R360P7SAUMA1 is an N-channel MOSFET from Infineon, specifically designed for high-efficiency applications. It features a pin count of 7. The functions of its pins are as follows:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The terminal connected to ground or the negative side of the power supply.
4. Body (B) - Internal connection that aids in the device's operation.
This MOSFET is notable for its low on-resistance (R_DS(on)) and high current handling capacity, making it suitable for power management in applications such as motor drivers, power supplies, and converters.
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The terminal connected to ground or the negative side of the power supply.
4. Body (B) - Internal connection that aids in the device's operation.
This MOSFET is notable for its low on-resistance (R_DS(on)) and high current handling capacity, making it suitable for power management in applications such as motor drivers, power supplies, and converters.
Manufacturer
The IPD70R360P7SAUMA1 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor company headquartered in Neubiberg, Germany. It specializes in the development and production of a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. The company serves various industries such as automotive, industrial, and consumer electronics, focusing on applications that require high efficiency, reliability, and performance. Infineon is known for its innovative technologies in power management and energy efficiency, contributing to advancements in areas like electric mobility and renewable energy.
Application
The IPD70R360P7SAUMA1 is an N-channel MOSFET primarily used in high-efficiency power applications. Its key application areas include power management in industrial equipment, automotive systems, motor control, DC-DC converters, and switch-mode power supplies (SMPS). It is suitable for applications requiring high current handling and low on-resistance for improved energy efficiency.
Equivalent
The IPD70R360P7SAUMA1 is an N-channel MOSFET. Equivalent products include the STP75NF75, IRF3205, and BSC093N06LS. When looking for equivalents, consider the voltage, current ratings, and RDS(on) specifications to ensure compatibility in your application. Always verify the datasheets for detailed comparisons.
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