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IPD60R400CE
MOSFETs CONSUMER
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- Mfr。パート #IPD60R400CE
- パッケージ
- データシート IPD60R400CE DataSheet
- 在庫中29484
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仕様
| Packaging | Reel |
概要
Description
The IPD60R400CE is an N-channel MOSFET designed for high-efficiency power applications, featuring a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 60A. This device is part of the Infineon CoolMOS™ series, known for its low conduction losses and fast switching capabilities, making it suitable for applications in power supplies, motor drives, and renewable energy systems.
Key features include a low gate threshold voltage, high input impedance, and a fast switching speed that enhances efficiency in power conversion. The IPD60R400CE is typically used in applications such as PFC (Power Factor Correction) circuits and DC-DC converters. Its robust construction allows for dependable performance in demanding environments.
When utilizing this MOSFET, it's important to consider thermal management and ensure proper heat dissipation to maintain optimal performance and reliability. Overall, the IPD60R400CE is a versatile choice for modern power electronics applications.
Key features include a low gate threshold voltage, high input impedance, and a fast switching speed that enhances efficiency in power conversion. The IPD60R400CE is typically used in applications such as PFC (Power Factor Correction) circuits and DC-DC converters. Its robust construction allows for dependable performance in demanding environments.
When utilizing this MOSFET, it's important to consider thermal management and ensure proper heat dissipation to maintain optimal performance and reliability. Overall, the IPD60R400CE is a versatile choice for modern power electronics applications.
Features
The IPD60R400CE is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 400V, suitable for high-voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) of up to 60A, making it ideal for high-current applications.
3. Low R_DS(on): It features a low on-resistance (R_DS(on)) of approximately 0.4 ohms, which helps reduce power loss and improves efficiency.
4. Fast Switching Speed: The MOSFET supports fast switching capabilities, enhancing performance in pulse applications.
5. Thermal Characteristics: It has a robust thermal performance, with a maximum junction temperature (T_J) of 150°C, ensuring reliable operation under demanding conditions.
6. Package: This component is available in a DPAK package, which facilitates efficient heat dissipation and easy mounting.
These attributes make the IPD60R400CE suitable for applications in power supplies, motor drives, and other high-efficiency power conversion systems.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 400V, suitable for high-voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) of up to 60A, making it ideal for high-current applications.
3. Low R_DS(on): It features a low on-resistance (R_DS(on)) of approximately 0.4 ohms, which helps reduce power loss and improves efficiency.
4. Fast Switching Speed: The MOSFET supports fast switching capabilities, enhancing performance in pulse applications.
5. Thermal Characteristics: It has a robust thermal performance, with a maximum junction temperature (T_J) of 150°C, ensuring reliable operation under demanding conditions.
6. Package: This component is available in a DPAK package, which facilitates efficient heat dissipation and easy mounting.
These attributes make the IPD60R400CE suitable for applications in power supplies, motor drives, and other high-efficiency power conversion systems.
Package
The IPD60R400CE is packaged in a TO-247 format. This package type is commonly used for high-power applications, featuring a sturdy structure that provides effective heat dissipation and ease of mounting on heatsinks.
Pinout
The IPD60R400CE is an N-channel MOSFET with a total of 4 pins. The pin functions are as follows:
1. Gate (G): Controls the MOSFET's switching on and off.
2. Drain (D): The terminal where the current exits the MOSFET.
3. Source (S): The terminal where the current enters the MOSFET.
This device is designed for high-efficiency applications, typically used in power management and switching applications, with a maximum drain-source voltage of 400V and a continuous drain current rating of 60A. The IPD60R400CE features low on-resistance, making it suitable for high-performance applications.
In summary, the IPD60R400CE has 4 pins (Gate, Drain, Source) and is used primarily in power electronics for efficient switching.
1. Gate (G): Controls the MOSFET's switching on and off.
2. Drain (D): The terminal where the current exits the MOSFET.
3. Source (S): The terminal where the current enters the MOSFET.
This device is designed for high-efficiency applications, typically used in power management and switching applications, with a maximum drain-source voltage of 400V and a continuous drain current rating of 60A. The IPD60R400CE features low on-resistance, making it suitable for high-performance applications.
In summary, the IPD60R400CE has 4 pins (Gate, Drain, Source) and is used primarily in power electronics for efficient switching.
Manufacturer
The IPD60R400CE is manufactured by Infineon Technologies AG, a German company that specializes in semiconductor and system solutions. Infineon is well-known for its products in various sectors, including automotive, industrial, and consumer electronics. The company focuses on developing innovative technologies for energy efficiency, mobility, and security applications. Infineon operates globally, providing components such as power semiconductors, microcontrollers, and sensors, and plays a significant role in advancing the digitalization and electrification trends across industries.
Application
The IPD60R400CE is an N-channel MOSFET primarily used in power electronics applications, including switch-mode power supplies, industrial motor drives, and automotive power management. Its high voltage and current handling capabilities make it suitable for DC-DC converters, inverters, and various high-efficiency power switching applications, enhancing performance in renewable energy systems and electric vehicles.
Equivalent
The IPD60R400CE is an N-channel MOSFET with a voltage rating of 600V and a current rating of 60A. Equivalent products include:
1. STP60NF06
2. IRF840
3. FQA30N60
4. MRF6VP11K
5. APT60M60J
Always verify specifications for compatibility in your specific application.
1. STP60NF06
2. IRF840
3. FQA30N60
4. MRF6VP11K
5. APT60M60J
Always verify specifications for compatibility in your specific application.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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