IPD60R3K3C6

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IPD60R3K3C6

MOSFET N-CH 600V 1.7A TO252-3

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仕様

Supplier Infineon Technologies
Package Tape & Reel (TR),Cut Tape (CT)
Series CoolMOS™
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 1.7A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 3.3Ohm @ 500mA, 10V
Vgs(th)(Max)@Id 3.5V @ 40µA
GateCharge(Qg)(Max)@Vgs 4.6 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 93 pF @ 100 V
PowerDissipation(Max) 18.1W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PG-TO252-3

概要

Description

The IPD60R3K3C6 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module manufactured by Infineon Technologies. It is designed for various industrial applications, including motor drives, renewable energy systems, and power conversion. This module features a voltage rating of 600V and a current rating of 60A, making it suitable for medium power applications.
Key attributes include low conduction and switching losses, which enhance efficiency and thermal performance. The IPD60R3K3C6 is part of the EasyPACK series, known for its compact design and easy integration into circuits. Additionally, it incorporates advanced technologies, such as optimized gate drive characteristics and a robust thermal management system.
Engineers value the module for its reliability and performance in demanding environments, enabling effective power control and conversion. Overall, the IPD60R3K3C6 is an excellent choice for applications requiring efficient, high-power switching solutions.

Features

The IPD60R3K3C6 is a power MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.

2. Current Rating: The device can handle a continuous drain current (I_D) of up to 60A, allowing it to manage significant power loads.
3. Low On-Resistance: It has a low R_DS(on) rating, which minimizes conduction losses and improves efficiency in power conversion applications.
4. Fast Switching Speed: The device offers fast switching capabilities, making it ideal for use in high-frequency applications.
5. Thermal Performance: It has good thermal performance, with a maximum junction temperature of 150°C, ensuring reliability under demanding conditions.
6. Package Type: Typically available in TO-247 or similar packages, it allows for effective heat dissipation.
These features make the IPD60R3K3C6 suitable for use in power supplies, motor drives, and various other applications requiring efficient power management.

Package

The IPD60R3K3C6 is typically packaged in a TO-247 form factor. This package type is designed for high-power applications, offering good thermal performance and is suitable for use in various power electronic circuits.

Pinout

The IPD60R3K3C6 is an N-channel MOSFET from Infineon Technologies. It features a total of 6 pins. The pin configuration and their functions are as follows:
1. Gate (G) - The control terminal used to turn the MOSFET on and off.
2. Drain (D) - The terminal where the load current exits the device.
3. Source (S) - The terminal where the load current enters the device.
4. Body Diode - Internal to the MOSFET, allows current to flow in the reverse direction when the MOSFET is off.
5. Thermal Pad - A pad for heat dissipation, typically connected to the source or ground and helps in managing the thermal performance of the device.
The IPD60R3K3C6 is designed for high-efficiency switching applications, with a maximum drain-source voltage of 600V and a continuous drain current of 60A.

Manufacturer

The IPD60R3K3C6 is manufactured by Infineon Technologies AG, a leading global semiconductor company headquartered in Neubiberg, Germany. Infineon specializes in developing and producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and automotive electronics. The company focuses on various markets, such as automotive, industrial, and consumer electronics, emphasizing energy efficiency and cutting-edge technology. Infineon is known for its innovation in power management solutions, making it a significant player in the semiconductor industry.

Application

The IPD60R3K3C6 is an IGBT (Insulated Gate Bipolar Transistor) designed for applications such as motor drives, inverters, and power supplies. It is commonly used in industrial equipment, renewable energy systems (like solar inverters), and automotive applications, including electric vehicles and hybrid systems. Its high efficiency and thermal performance make it suitable for high-power switching applications.

Equivalent

The IPD60R3K3C6 is an N-channel MOSFET from Infineon. Equivalent products include:
1. IRF320 - International Rectifier
2. STP60NF06 - STMicroelectronics
3. BSC060N06LS - Infineon
4. PMF60R1K0E - Nexperia
Always verify the datasheets for specific application requirements.

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フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

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