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IPD60R385CP
MOSFETs N-Ch 600V 9A DPAK-2 CoolMOS CP
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- Mfr。パート #IPD60R385CP
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- データシート IPD60R385CP DataSheet
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| Packaging | MouseReel |
| Standard Pack Qty | 2500 |
概要
Description
The IPD60R385CP is a high-performance N-channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 32A, making it suitable for high-voltage and high-current applications. The MOSFET's low on-resistance (R_DS(on)) of approximately 0.385 ohms helps minimize power losses and improve efficiency in circuits.
The device is housed in a TO-247 package, facilitating effective heat dissipation. It is commonly used in applications such as power supplies, motor drives, and converters. The IPD60R385CP is also known for its fast switching speeds, which enhance performance in high-frequency applications.
Overall, the IPD60R385CP is a reliable choice for engineers looking for robust MOSFET solutions in demanding environments, providing a balance of efficiency, thermal performance, and cost-effectiveness.
The device is housed in a TO-247 package, facilitating effective heat dissipation. It is commonly used in applications such as power supplies, motor drives, and converters. The IPD60R385CP is also known for its fast switching speeds, which enhance performance in high-frequency applications.
Overall, the IPD60R385CP is a reliable choice for engineers looking for robust MOSFET solutions in demanding environments, providing a balance of efficiency, thermal performance, and cost-effectiveness.
Features
The IPD60R385CP is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 600V, making it suitable for high-voltage applications.
2. Current Rating: It supports a continuous drain current (Id) of up to 60A, ensuring efficient power handling.
3. RDS(on): The on-resistance is low, typically around 0.385 ohms, minimizing power loss and improving efficiency during operation.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) ranges from 2 to 4V, allowing for effective switching with standard gate drive voltages.
5. Switching Speed: It offers fast switching capabilities, ideal for applications like DC-DC converters and inverters.
6. Package Type: Available in a TO-220 package, it facilitates easy heat dissipation.
7. Thermal Characteristics: It has excellent thermal performance, ensuring reliability in demanding environments.
Overall, the IPD60R385CP is well-suited for various applications requiring robust performance and efficiency in power electronics.
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 600V, making it suitable for high-voltage applications.
2. Current Rating: It supports a continuous drain current (Id) of up to 60A, ensuring efficient power handling.
3. RDS(on): The on-resistance is low, typically around 0.385 ohms, minimizing power loss and improving efficiency during operation.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) ranges from 2 to 4V, allowing for effective switching with standard gate drive voltages.
5. Switching Speed: It offers fast switching capabilities, ideal for applications like DC-DC converters and inverters.
6. Package Type: Available in a TO-220 package, it facilitates easy heat dissipation.
7. Thermal Characteristics: It has excellent thermal performance, ensuring reliability in demanding environments.
Overall, the IPD60R385CP is well-suited for various applications requiring robust performance and efficiency in power electronics.
Package
The IPD60R385CP is packaged in a DPAK (also known as TO-252) format. This package type is commonly used for power MOSFETs due to its compact size and efficient thermal performance.
Pinout
The IPD60R385CP is an N-channel power MOSFET with a pin count of 5. Its primary functions include high-efficiency switching and power management in various applications such as motor control, power supplies, and converters. The pin configuration is as follows:
1. Gate (G): Controls the MOSFET switching.
2. Drain (D): Connects to the load; the main current flows through this pin.
3. Source (S): The reference point for the gate voltage; connects to ground or the lower side of the load.
4. D1 (optional): May be used for additional drain connection in specific applications.
5. D2 (optional): Similar to D1, for flexibility in connections.
The device features a low on-resistance, fast switching times, and is designed for high-current applications, making it suitable for efficient power regulation.
1. Gate (G): Controls the MOSFET switching.
2. Drain (D): Connects to the load; the main current flows through this pin.
3. Source (S): The reference point for the gate voltage; connects to ground or the lower side of the load.
4. D1 (optional): May be used for additional drain connection in specific applications.
5. D2 (optional): Similar to D1, for flexibility in connections.
The device features a low on-resistance, fast switching times, and is designed for high-current applications, making it suitable for efficient power regulation.
Manufacturer
The IPD60R385CP is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in providing a wide range of semiconductor and system solutions, focusing on areas such as automotive, industrial power control, and security technologies. The company is known for its innovation in power management, enabling energy efficiency and performance in various applications. Infineon’s products include MOSFETs, IGBTs, and other power electronics, primarily serving markets like automotive, industrial, and consumer electronics.
Application
The IPD60R385CP is an N-channel MOSFET primarily used in power electronics applications. Its main application areas include:
1. Switching Power Supplies - Efficiently managing power conversion.
2. Motor Control - Driving motors in industrial and automotive applications.
3. DC-DC Converters - Converting voltage levels in power management systems.
4. Inverters - Used in renewable energy systems like solar inverters.
5. LED Drivers - Controlling LED lighting systems.
Its high current handling and low on-resistance make it suitable for these applications.
1. Switching Power Supplies - Efficiently managing power conversion.
2. Motor Control - Driving motors in industrial and automotive applications.
3. DC-DC Converters - Converting voltage levels in power management systems.
4. Inverters - Used in renewable energy systems like solar inverters.
5. LED Drivers - Controlling LED lighting systems.
Its high current handling and low on-resistance make it suitable for these applications.
Equivalent
The IPD60R385CP is an N-channel MOSFET commonly used in power applications. Equivalent products include:
1. IRF3205
2. STP55NF06
3. FQP50N06
4. BUK7Y1R2-60
Always check the datasheets for specific parameters like Vds, Rds(on), and package type to ensure compatibility for your application.
1. IRF3205
2. STP55NF06
3. FQP50N06
4. BUK7Y1R2-60
Always check the datasheets for specific parameters like Vds, Rds(on), and package type to ensure compatibility for your application.
出荷
出荷方法私たち
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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