IPD60N10S4L12ATMA1

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IPD60N10S4L12ATMA1

MOSFET N-CH 100V 60A TO252-3

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仕様

Supplier Infineon Technologies
Package Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101, HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 60A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 12mOhm @ 60A, 10V
Vgs(th)(Max)@Id 2.1V @ 46µA
GateCharge(Qg)(Max)@Vgs 49 nC @ 10 V
Vgs(Max) ±16V
InputCapacitance(Ciss)(Max)@Vds 3170 pF @ 25 V
PowerDissipation(Max) 94W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PG-TO252-3-313

概要

Description

The IPD60N10S4L12ATMA1 is a high-performance N-channel MOSFET designed for power applications. It features low on-resistance (Rds(on)), which enhances efficiency and minimizes heat generation during operation. With a voltage rating of 600V and a current rating of up to 60A, this MOSFET is suitable for various applications, including power management, switching, and motor control in industrial and automotive contexts.
The device is part of the S4L series, which emphasizes high-speed switching and robust thermal performance. Its TO-247 package allows for effective heat dissipation and easy mounting on PCBs. The IPD60N10S4L12ATMA1 is optimized for high-frequency operation, making it ideal for applications like switch-mode power supplies (SMPS) and inverters.
This MOSFET can handle high-voltage and high-current loads, making it a reliable choice for demanding applications requiring efficiency and durability. Always refer to the manufacturer's datasheet for detailed specifications and electrical characteristics when integrating this component into designs.

Features

The IPD60N10S4L12ATMA1 is an N-channel Power MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It can handle drain-source voltages up to 100V.
2. Continuous Drain Current: Capable of carrying up to 60A, suitable for high-power applications.
3. RDS(on): Low on-resistance (around 10 mΩ), which minimizes power losses and improves efficiency in switching applications.
4. Thermal Performance: Designed for efficient heat dissipation, it has a maximum junction temperature of 175°C.
5. Package Type: Available in a TO-220 package for easy mounting and heat sinking.
6. Applications: Ideal for use in power supplies, motor drives, and other high-frequency switching applications.
7. Gate Threshold Voltage: Low gate voltage requirements enable compatibility with various control circuits.
This MOSFET is widely used in automotive, industrial, and consumer electronics due to its robustness and efficiency.

Package

The IPD60N10S4L12ATMA1 is packaged in a TO-220-3 type package. This package type is designed for efficient heat dissipation and is commonly used for power transistors and MOSFETs in various applications.

Pinout

The IPD60N10S4L12ATMA1 is an N-channel MOSFET with a pin count of 6. It is designed for use in high-efficiency switching applications. The pin configuration and their functions are as follows:
1. Gate (G) - This pin controls the MOSFET and is used to turn it on and off.
2. Drain (D) - This pin is where the load current flows out of the MOSFET.
3. Source (S) - This is the pin where current enters the MOSFET from the load.
4. Gate (G) - (another pin for gate connection, or may also be used for discrete applications).
5. Drain (D) - (additional pin for the drain connection, allowing for multiple configurations).
6. Source (S) - (additional pin for the source connection).
This device is optimized for automotive applications due to its high performance and reliability. When implementing, ensure proper thermal management and safe operating conditions.

Manufacturer

The IPD60N10S4L12ATMA1 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in providing semiconductor and system solutions for various applications, including automotive, industrial, and consumer electronics. Infineon is known for its expertise in power semiconductors, microcontrollers, and sensors, focusing on energy efficiency and sustainability. Its products are widely used in power management, automotive systems, and smart technology solutions.

Application

The IPD60N10S4L12ATMA1 is a high-voltage N-channel MOSFET primarily used in power management applications. Key application areas include motor control, power supplies, LED drivers, and DC-DC converters. Its features make it suitable for efficient switching in industrial automation, renewable energy systems, and consumer electronics.

Equivalent

The IPD60N10S4L12ATMA1 is an N-channel MOSFET. Equivalent products include:
1. IRF540N
2. STP60NF10
3. FQP60N10
4. AUIRGP60N10
5. BUK954R-100
Always verify the specifications such as voltage, current rating, and R_DS(on) for compatibility in your application.

出荷

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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