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IPD50N04S4-08
IPD50N04 - 20V-40V N-CHANNEL AUT
- メーカー
- Mfr。パート #IPD50N04S4-08
- パッケージ TO-252-3,DPak(2Leads+Tab),SC-63
- データシート IPD50N04S4-08 DataSheet
- 在庫中3246
100% オリジナル &新しい
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365日の保証
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仕様
| Package | Bulk |
| ProductStatus | Active |
概要
Description
The IPD50N04S4-08 is a N-channel MOSFET designed for high-efficiency power applications. With a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) of 50A, it is suitable for use in power management, motor control, and DC-DC converters. This MOSFET features low on-resistance (R_DS(on)), typically around 4 mΩ, which minimizes conduction losses, enhancing overall system efficiency.
It is built using advanced technology, offering fast switching speeds and excellent thermal performance. The IPD50N04S4-08 comes in a TO-220 package, facilitating easy heat dissipation and PCB mounting. Its gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for compatibility with various control voltages.
Overall, the IPD50N04S4-08 is an ideal choice for designers seeking reliable and efficient components for their high-power electronic designs.
It is built using advanced technology, offering fast switching speeds and excellent thermal performance. The IPD50N04S4-08 comes in a TO-220 package, facilitating easy heat dissipation and PCB mounting. Its gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for compatibility with various control voltages.
Overall, the IPD50N04S4-08 is an ideal choice for designers seeking reliable and efficient components for their high-power electronic designs.
Features
The IPD50N04S4-08 is a N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, making it suitable for various low-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 50A, allowing for significant power handling.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) typically around 8 mΩ, which minimizes conduction losses and improves thermal performance.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is relatively low, ensuring efficient switching characteristics.
5. Packaging: It is typically available in a TO-220 package, facilitating easier heat dissipation and mounting.
6. Fast Switching: The MOSFET is designed for fast switching applications, making it suitable for use in power supplies, motor drives, and other switching applications.
Overall, the IPD50N04S4-08 is an efficient, high-current MOSFET ideal for power conversion and management in various electronic systems.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, making it suitable for various low-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 50A, allowing for significant power handling.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) typically around 8 mΩ, which minimizes conduction losses and improves thermal performance.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is relatively low, ensuring efficient switching characteristics.
5. Packaging: It is typically available in a TO-220 package, facilitating easier heat dissipation and mounting.
6. Fast Switching: The MOSFET is designed for fast switching applications, making it suitable for use in power supplies, motor drives, and other switching applications.
Overall, the IPD50N04S4-08 is an efficient, high-current MOSFET ideal for power conversion and management in various electronic systems.
Package
The IPD50N04S4-08 is packaged in a TO-220 format. This package type is known for its good thermal management and ease of mounting, making it suitable for high-power applications.
Pinout
The IPD50N04S4-08 is an N-channel MOSFET with a total of 5 pins. The pin configuration and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET's switching state. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the pin through which the main current flows from the MOSFET when it is turned on.
3. Source (S): This pin is connected to ground in typical applications, allowing for current to flow from the drain to this pin.
4. Body Diode: Internally present, facilitating current flow when reverse biased, although it is not a dedicated pin.
5. Thermal Pad: Not a pin per se, but a substrate connection for heat dissipation, often soldered to the PCB for improved thermal management.
The device is used in various applications, including power management and switching circuits.
1. Gate (G): This pin is used to control the MOSFET's switching state. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the pin through which the main current flows from the MOSFET when it is turned on.
3. Source (S): This pin is connected to ground in typical applications, allowing for current to flow from the drain to this pin.
4. Body Diode: Internally present, facilitating current flow when reverse biased, although it is not a dedicated pin.
5. Thermal Pad: Not a pin per se, but a substrate connection for heat dissipation, often soldered to the PCB for improved thermal management.
The device is used in various applications, including power management and switching circuits.
Manufacturer
The IPD50N04S4-08 is manufactured by Infineon Technologies, a global leader in semiconductor solutions. Founded in 1999 and headquartered in Neubiberg, Germany, Infineon specializes in a wide range of products, including power semiconductors, microcontrollers, and sensors. The company primarily serves industries such as automotive, industrial automation, power management, and consumer electronics. Infineon is recognized for its innovations in energy efficiency and advanced technologies, making it a key player in the semiconductor market and a significant contributor to the development of sustainable solutions.
Application
The IPD50N04S4-08 is a N-channel MOSFET used in various applications, including power management, DC-DC converters, motor control, and automotive systems. Its low on-resistance and high-speed switching capabilities make it suitable for applications like power supplies, electric vehicles, and renewable energy systems, where efficiency and thermal performance are critical.
Equivalent
The IPD50N04S4-08 is a N-channel MOSFET primarily used in power applications. Equivalent products include:
1. IRF320
2. STP50NF06L
3. FDP50N04
4. BTA50-400V (for specific applications)
Always verify specifications like Vds, Id, and Rds(on) for compatibility in your application.
1. IRF320
2. STP50NF06L
3. FDP50N04
4. BTA50-400V (for specific applications)
Always verify specifications like Vds, Id, and Rds(on) for compatibility in your application.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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