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IPD042P03L3 G
MOSFETs P-Ch -30V 70A DPAK-2 OptiMOS P3
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- Mfr。パート #IPD042P03L3 G
- パッケージ
- データシート IPD042P03L3 G DataSheet
- 在庫中28600
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| Packaging | MouseReel |
| Standard Pack Qty | 2500 |
概要
Description
IPD042P03L3 G is a specific part number that likely refers to a type of integrated circuit or semiconductor device. Typically, such designations include information about the component's functionality, packaging, and specifications. In general, products like these are used in various electronic applications, including amplifiers, signal processing, or power management.
To understand its characteristics, you would typically refer to the manufacturer’s datasheet, which provides detailed information regarding electrical parameters, pin configuration, thermal performance, and application notes. This information is crucial for engineers and designers to integrate the component effectively into their circuits. If you are looking for specific applications, features, or performance metrics, consulting the relevant technical documentation would be essential.
To understand its characteristics, you would typically refer to the manufacturer’s datasheet, which provides detailed information regarding electrical parameters, pin configuration, thermal performance, and application notes. This information is crucial for engineers and designers to integrate the component effectively into their circuits. If you are looking for specific applications, features, or performance metrics, consulting the relevant technical documentation would be essential.
Features
The IPD042P03L3 G is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of 42A, ensuring reliable performance in demanding conditions.
3. R_DS(on): It offers a low on-resistance, typically around 4.2 mΩ, which minimizes power losses during operation.
4. Gate Threshold Voltage: The V_GS(th) is relatively low, allowing for efficient driving with lower gate voltages.
5. Fast Switching: The MOSFET is optimized for rapid switching, enhancing efficiency in applications like DC-DC converters and motor drives.
6. Package: It typically comes in a TO-220 or similar package, facilitating effective thermal management.
Overall, the IPD042P03L3 G is an efficient and robust choice for various power electronic applications.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of 42A, ensuring reliable performance in demanding conditions.
3. R_DS(on): It offers a low on-resistance, typically around 4.2 mΩ, which minimizes power losses during operation.
4. Gate Threshold Voltage: The V_GS(th) is relatively low, allowing for efficient driving with lower gate voltages.
5. Fast Switching: The MOSFET is optimized for rapid switching, enhancing efficiency in applications like DC-DC converters and motor drives.
6. Package: It typically comes in a TO-220 or similar package, facilitating effective thermal management.
Overall, the IPD042P03L3 G is an efficient and robust choice for various power electronic applications.
Package
The IPD042P03L3 G is packaged in a TO-220 format, which is a type of package commonly used for power devices. This packaging provides good thermal performance and ease of mounting for applications requiring high power handling.
Pinout
The IPD042P03L3 G is a N-channel MOSFET with a pin count of 3. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows the device to switch on, enabling current to flow from drain to source.
2. Drain (D): This pin is the output terminal where the load is connected. When the MOSFET is turned on, current flows from the drain to the source.
3. Source (S): This pin is connected to the ground or negative side of the power supply. It is the terminal through which the current exits the device.
The IPD042P03L3 G is designed for low on-resistance and high-speed switching applications, making it suitable for various power management tasks in electronic circuits.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows the device to switch on, enabling current to flow from drain to source.
2. Drain (D): This pin is the output terminal where the load is connected. When the MOSFET is turned on, current flows from the drain to the source.
3. Source (S): This pin is connected to the ground or negative side of the power supply. It is the terminal through which the current exits the device.
The IPD042P03L3 G is designed for low on-resistance and high-speed switching applications, making it suitable for various power management tasks in electronic circuits.
Manufacturer
The IPD042P03L3 G is manufactured by Infineon Technologies, a multinational semiconductor manufacturer headquartered in Germany. Infineon specializes in producing a wide range of semiconductors and system solutions for various industries, including automotive, industrial power control, and security. The company is well-known for its innovations in power management, particularly in the development of power MOSFETs, integrated circuits, and other components that enhance energy efficiency and performance in electronic applications. Infineon's products are widely used in various applications, including renewable energy systems, electric vehicles, and consumer electronics.
Application
The IPD042P03L3 G is a N-channel MOSFET commonly used in various applications, including power management, DC-DC converters, and motor control. Its low on-resistance and high switching speed make it ideal for energy-efficient designs in automotive, industrial, and consumer electronics. Additionally, it is suitable for load switching and as a control element in power supply circuits.
Equivalent
The IPD042P03L3 G is a N-channel MOSFET. Equivalent products include the IRF3205, STP3205, and FQP30N06L. Always verify specifications such as Vds, Id, and Rds(on) for compatibility in your specific application.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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