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IPC100N04S5L-1R5
MOSFETs MOSFET_(20V 40V)
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- Mfr。パート #IPC100N04S5L-1R5
- パッケージ
- データシート IPC100N04S5L-1R5 DataSheet
- 在庫中29857
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仕様
| Packaging | Reel |
概要
Description
The IPC100N04S5L-1R5 is a high-performance N-channel MOSFET designed for efficient power management and switching applications. It features low on-resistance and fast switching capabilities, making it suitable for various electronic devices, including power supplies, motor drivers, and converters. This MOSFET is built to handle high current and voltage levels, with a maximum drain-source voltage (V_DS) of 40V and continuous drain current (I_D) typically around 100A, depending on the thermal conditions.
The package type, often in DPAK or similar configurations, allows for effective thermal dissipation, enhancing reliability in demanding applications. Its gate threshold voltage (V_GS(th)) is optimized for use in low-voltage logic circuits, providing compatibility with a range of control signals. The IPC100N04S5L-1R5 is popular in automotive, industrial, and consumer electronics sectors, owing to its robustness and efficiency, contributing to energy savings and improving the overall performance of electronic systems.
The package type, often in DPAK or similar configurations, allows for effective thermal dissipation, enhancing reliability in demanding applications. Its gate threshold voltage (V_GS(th)) is optimized for use in low-voltage logic circuits, providing compatibility with a range of control signals. The IPC100N04S5L-1R5 is popular in automotive, industrial, and consumer electronics sectors, owing to its robustness and efficiency, contributing to energy savings and improving the overall performance of electronic systems.
Features
The IPC100N04S5L-1R5 is a high-performance N-channel MOSFET transistor, designed for applications requiring low on-resistance and high efficiency. Key features include:
1. Low R_DS(on): Offers significantly low on-resistance, enhancing efficiency in power management applications.
2. High Voltage Rating: Typically rated for a maximum drain-source voltage (V_DS) of around 40V, suitable for various power supply circuits.
3. High Current Capability: Can handle high continuous drain current, making it suitable for demanding applications.
4. Fast Switching Speed: Optimized for rapid switching operations, beneficial in high-frequency applications.
5. Thermal Performance: Designed to operate effectively at elevated temperatures, ensuring reliability in diverse environments.
These features make the IPC100N04S5L-1R5 suitable for applications in power supplies, motor drives, and various electronic circuits where efficiency and performance are critical.
1. Low R_DS(on): Offers significantly low on-resistance, enhancing efficiency in power management applications.
2. High Voltage Rating: Typically rated for a maximum drain-source voltage (V_DS) of around 40V, suitable for various power supply circuits.
3. High Current Capability: Can handle high continuous drain current, making it suitable for demanding applications.
4. Fast Switching Speed: Optimized for rapid switching operations, beneficial in high-frequency applications.
5. Thermal Performance: Designed to operate effectively at elevated temperatures, ensuring reliability in diverse environments.
These features make the IPC100N04S5L-1R5 suitable for applications in power supplies, motor drives, and various electronic circuits where efficiency and performance are critical.
Package
The IPC100N04S5L-1R5 is typically packaged in a TO-220 or similar type package. This package type allows for efficient heat dissipation and is commonly used for power devices in various electronic applications.
Pinout
The IPC100N04S5L-1R5 is a power MOSFET with a pin count of 6. The pin configuration and their functions are as follows:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): Connects to the load; current flows out of this terminal.
3. Source (S): Connects to ground or the negative side of the power supply.
4. Drain (D): Another Drain connection for a dual package configuration.
5. Source (S): Another Source connection for a dual package configuration.
6. Gate (G): Another Gate connection for a dual package configuration.
This MOSFET is designed for high-efficiency applications, providing low on-resistance and fast switching capabilities.
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): Connects to the load; current flows out of this terminal.
3. Source (S): Connects to ground or the negative side of the power supply.
4. Drain (D): Another Drain connection for a dual package configuration.
5. Source (S): Another Source connection for a dual package configuration.
6. Gate (G): Another Gate connection for a dual package configuration.
This MOSFET is designed for high-efficiency applications, providing low on-resistance and fast switching capabilities.
Manufacturer
The IPC100N04S5L-1R5 is manufactured by Infineon Technologies AG. Infineon is a leading global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in designing and producing a wide range of semiconductor and system solutions for various applications, including automotive, industrial, and consumer electronics. Infineon is known for its focus on power management, automotive safety, and security solutions, contributing significantly to advancements in areas such as electric mobility, energy efficiency, and the Internet of Things (IoT). With a strong emphasis on innovation and sustainability, Infineon plays a crucial role in enabling smart technologies and energy-efficient solutions worldwide.
Application
The IPC100N04S5L-1R5 is a high-performance MOSFET primarily used in power management applications. Its key application areas include DC-DC converters, power supplies, motor drives, and battery management systems. It is suitable for electric vehicles, renewable energy systems, and industrial automation due to its efficiency and fast switching capabilities.
Equivalent
The IPC100N04S5L-1R5 is a N-channel MOSFET. Equivalent products include the IRF3205, STP100N04, and PSMN2R8-80BSF. Ensure to check specifications such as voltage rating, current capacity, R_DS(on), and package type to confirm compatibility for your specific application.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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