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IPB80R290C3A
N-CHANNEL POWER MOSFET
- メーカー
- Mfr。パート #IPB80R290C3A
- パッケージ PG-TO263-3
- データシート IPB80R290C3A DataSheet
- 在庫中3824
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仕様
| Package | Bulk |
| Series | Automotive, AEC-Q101, CoolMOS™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 800 V |
| Current-ContinuousDrain(Id)@25°C | 17A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 290mOhm @ 11A, 10V |
| Vgs(th)(Max)@Id | 3.9V @ 1mA |
| GateCharge(Qg)(Max)@Vgs | 117 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 2300 pF @ 100 V |
| PowerDissipation(Max) | 227W (Tc) |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PG-TO263-3-2 |
概要
Description
The IPB80R290C3A is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for applications requiring efficient power management. With a maximum drain-source voltage (VDS) of 80V and a continuous drain current (ID) of up to 290A, this MOSFET is suitable for demanding applications, including power supplies, motor drives, and DC-DC converters.
It features low on-resistance (RDS(on)), which minimizes conduction losses and enhances efficiency in power conversion. The device also offers fast switching capabilities, making it ideal for high-frequency applications. The IPB80R290C3A is housed in a TO-220 package, providing effective thermal management and ease of integration into circuits.
Key specifications include a gate threshold voltage (VGS(th)) of 2V to 4V, ensuring reliable operation with standard gate drive voltages. Overall, the IPB80R290C3A is a robust choice for engineers seeking reliability and efficiency in power electronic designs.
It features low on-resistance (RDS(on)), which minimizes conduction losses and enhances efficiency in power conversion. The device also offers fast switching capabilities, making it ideal for high-frequency applications. The IPB80R290C3A is housed in a TO-220 package, providing effective thermal management and ease of integration into circuits.
Key specifications include a gate threshold voltage (VGS(th)) of 2V to 4V, ensuring reliable operation with standard gate drive voltages. Overall, the IPB80R290C3A is a robust choice for engineers seeking reliability and efficiency in power electronic designs.
Features
The IPB80R290C3A is an N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: It typically has a drain-source voltage (Vds) of 80V, allowing for robust operation in various applications.
2. Current Rating: With a continuous drain current (Id) of up to 290A, it's suitable for high-power applications.
3. On-Resistance: The device offers a low Rds(on) of around 5.5 mΩ at Vgs = 10V, which helps minimize conduction losses.
4. Fast Switching: It has a low gate charge (Qg), enabling quick switching, which is advantageous in high-frequency applications.
5. Thermal Performance: Designed to handle high thermal loads, it features a low thermal resistance, supporting efficient heat dissipation.
6. Packaging: Available in a TO-220 package, facilitating easy mounting and heat sinking.
Overall, the IPB80R290C3A is ideal for use in power supplies, converters, and motor control applications, where efficiency and performance are critical.
1. Voltage Rating: It typically has a drain-source voltage (Vds) of 80V, allowing for robust operation in various applications.
2. Current Rating: With a continuous drain current (Id) of up to 290A, it's suitable for high-power applications.
3. On-Resistance: The device offers a low Rds(on) of around 5.5 mΩ at Vgs = 10V, which helps minimize conduction losses.
4. Fast Switching: It has a low gate charge (Qg), enabling quick switching, which is advantageous in high-frequency applications.
5. Thermal Performance: Designed to handle high thermal loads, it features a low thermal resistance, supporting efficient heat dissipation.
6. Packaging: Available in a TO-220 package, facilitating easy mounting and heat sinking.
Overall, the IPB80R290C3A is ideal for use in power supplies, converters, and motor control applications, where efficiency and performance are critical.
Package
The IPB80R290C3A is typically packaged in a TO-220 format, which is a standard type of package used for power MOSFETs. This package provides good thermal management and allows for easy mounting on heat sinks.
Pinout
The IPB80R290C3A is an N-channel MOSFET designed for power applications. It features a total of 3 pins.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to this pin allows the device to turn on, enabling current to flow between the drain and source.
2. Drain (D): This is the terminal through which the current flows out of the MOSFET when it is on. It connects to the load in the circuit.
3. Source (S): This pin is the terminal through which the current enters the MOSFET. It is typically connected to ground or a lower voltage level in a circuit.
The IPB80R290C3A is capable of handling high currents and voltages, making it suitable for applications such as power management and motor control.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to this pin allows the device to turn on, enabling current to flow between the drain and source.
2. Drain (D): This is the terminal through which the current flows out of the MOSFET when it is on. It connects to the load in the circuit.
3. Source (S): This pin is the terminal through which the current enters the MOSFET. It is typically connected to ground or a lower voltage level in a circuit.
The IPB80R290C3A is capable of handling high currents and voltages, making it suitable for applications such as power management and motor control.
Manufacturer
The IPB80R290C3A is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in providing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. The company focuses on sectors such as automotive, industrial, and consumer electronics, with a strong emphasis on energy efficiency and performance. Established in 1999 as a spin-off from Siemens AG, Infineon has grown to be a key player in the semiconductor industry, serving global markets with innovative technologies that support applications in various fields, including automotive safety, energy management, and communication.
Application
The IPB80R290C3A is an N-channel MOSFET commonly used in various applications such as power management, DC-DC converters, motor drives, and switching power supplies. It is suitable for automotive applications, industrial equipment, and renewable energy systems due to its high efficiency and thermal performance. Additionally, it can be utilized in computing power supplies and electric vehicle systems.
Equivalent
The IPB80R290C3A is an N-channel MOSFET. Equivalent products include the STP80NF290, FQP80N290, and IRF320. Ensure that the voltage, current ratings, and R_DS(on) specifications match to ensure compatibility. Always verify with the manufacturer's datasheet for precise equivalency.
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