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IPB60R160P6
MOSFETs HIGH POWER_LEGACY
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- Mfr。パート #IPB60R160P6
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- データシート IPB60R160P6 DataSheet
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仕様
| Packaging | Reel |
概要
Description
The IPB60R160P6 is a high-performance N-channel MOSFET designed for power applications. It features a voltage rating of 600V and a continuous drain current of 160A, making it suitable for high-voltage and high-current applications, such as industrial motor drives, power supplies, and inverters.
Key specifications include a low on-resistance (RDS(on)), typically around 0.16 ohms, which enhances efficiency by minimizing power loss during operation. The device also exhibits fast switching capabilities, allowing for improved performance in fast-switching scenarios.
Packaging typically comes in a TO-247 format, providing good thermal performance due to its larger surface area. The IPB60R160P6 is designed for high reliability and thermal stability under various operating conditions, making it an ideal choice for robust power management systems.
In summary, the IPB60R160P6 combines high voltage capability, substantial current handling, and low on-resistance, catering to demanding electronic applications.
Key specifications include a low on-resistance (RDS(on)), typically around 0.16 ohms, which enhances efficiency by minimizing power loss during operation. The device also exhibits fast switching capabilities, allowing for improved performance in fast-switching scenarios.
Packaging typically comes in a TO-247 format, providing good thermal performance due to its larger surface area. The IPB60R160P6 is designed for high reliability and thermal stability under various operating conditions, making it an ideal choice for robust power management systems.
In summary, the IPB60R160P6 combines high voltage capability, substantial current handling, and low on-resistance, catering to demanding electronic applications.
Features
The IPB60R160P6 is a high-performance N-channel MOSFET designed for various applications, including power supplies and motor drives. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) can reach up to 160A, allowing it to handle significant power loads.
3. Low R_DS(on): With a low on-resistance (R_DS(on)) typically around 0.16 ohms, it provides high efficiency by minimizing conduction losses.
4. Fast Switching: Designed for rapid switching applications, it enhances performance in high-frequency circuits.
5. Thermal Management: It has a high maximum junction temperature (T_j) of 175°C, ensuring reliable operation under thermal stress.
Overall, the IPB60R160P6 offers excellent performance for demanding power electronics applications while maintaining energy efficiency.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) can reach up to 160A, allowing it to handle significant power loads.
3. Low R_DS(on): With a low on-resistance (R_DS(on)) typically around 0.16 ohms, it provides high efficiency by minimizing conduction losses.
4. Fast Switching: Designed for rapid switching applications, it enhances performance in high-frequency circuits.
5. Thermal Management: It has a high maximum junction temperature (T_j) of 175°C, ensuring reliable operation under thermal stress.
Overall, the IPB60R160P6 offers excellent performance for demanding power electronics applications while maintaining energy efficiency.
Package
The IPB60R160P6 is packaged in a TO-247 format. This package type is designed for high-power applications, providing effective thermal management and durability in various electronic circuits.
Pinout
The IPB60R160P6 is an N-channel MOSFET manufactured by Infineon Technologies. It features a pin count of 3. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET's switching. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the output pin where the current flows out of the MOSFET when it is turned on.
3. Source (S): This is the input pin where current enters the MOSFET. It is typically connected to the ground or the lower potential in the circuit.
The IPB60R160P6 is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 160A. It is commonly used in power management and conversion applications.
1. Gate (G): This pin is used to control the MOSFET's switching. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the output pin where the current flows out of the MOSFET when it is turned on.
3. Source (S): This is the input pin where current enters the MOSFET. It is typically connected to the ground or the lower potential in the circuit.
The IPB60R160P6 is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 160A. It is commonly used in power management and conversion applications.
Manufacturer
The IPB60R160P6 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in power semiconductors, microcontrollers, and sensors for various applications, including automotive, industrial, and consumer electronics. The company focuses on enabling energy efficiency, mobility, and security through its innovative semiconductor solutions. Infineon is recognized for its expertise in power management and has a significant presence in the automotive sector, where it provides components that enhance vehicle performance and safety.
Application
The IPB60R160P6 is an N-channel power MOSFET primarily used in applications such as power supplies, motor drives, inverter circuits, and industrial automation. Its high voltage and current handling capabilities make it suitable for energy-efficient switching in renewable energy systems, electric vehicles, and consumer electronics. Its fast switching speeds and low on-resistance also contribute to improved performance in various power management applications.
Equivalent
The IPB60R160P6 is a N-channel MOSFET. Equivalent products include the STP60NF16, IRF840, and BUK6YB60-60. Always verify specifications like voltage, current, and package type when selecting alternatives.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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