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IPB60R099P7
- メーカー
- Mfr。パート #IPB60R099P7
- パッケージ
- データシート
- 在庫中4260
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
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仕様
| Technology | Si |
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
概要
Description
The IPB60R099P7 is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-efficiency applications, particularly in power management systems. It features a low on-resistance (RDS(on)) of 0.099 ohms, allowing for minimal power loss during operation. This device is capable of handling high voltages, with a maximum drain-source voltage (VDS) of 60V, and can conduct significant current, making it suitable for various applications such as DC-DC converters, motor drivers, and power supplies.
The IPB60R099P7 also incorporates fast switching capabilities, which enhances its performance in high-frequency applications. It typically comes in a TO-220 package, providing good thermal performance, allowing for effective heat dissipation. Its combination of high efficiency, reliability, and robust performance makes it a popular choice among engineers seeking reliable components for their electronic designs. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.
The IPB60R099P7 also incorporates fast switching capabilities, which enhances its performance in high-frequency applications. It typically comes in a TO-220 package, providing good thermal performance, allowing for effective heat dissipation. Its combination of high efficiency, reliability, and robust performance makes it a popular choice among engineers seeking reliable components for their electronic designs. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.
Features
The IPB60R099P7 is a N-channel MOSFET from Infineon, designed for applications requiring high efficiency and low power loss. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for medium voltage applications.
2. Current Handling: The device can handle a continuous drain current (I_D) of up to 99A, enabling it to manage significant loads.
3. Low R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 0.099 ohms at V_GS = 10V, which contributes to reduced conduction losses.
4. Fast Switching Speeds: The IPB60R099P7 supports fast switching, ideal for high-frequency applications like switch-mode power supplies and motor drivers.
5. Thermal Performance: It has a robust thermal performance, with a maximum junction temperature of 175°C, allowing for reliable operation in demanding environments.
6. Package Type: Typically available in a TO-220 package, it facilitates effective heat dissipation.
These features make the IPB60R099P7 suitable for various applications in power electronics.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for medium voltage applications.
2. Current Handling: The device can handle a continuous drain current (I_D) of up to 99A, enabling it to manage significant loads.
3. Low R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 0.099 ohms at V_GS = 10V, which contributes to reduced conduction losses.
4. Fast Switching Speeds: The IPB60R099P7 supports fast switching, ideal for high-frequency applications like switch-mode power supplies and motor drivers.
5. Thermal Performance: It has a robust thermal performance, with a maximum junction temperature of 175°C, allowing for reliable operation in demanding environments.
6. Package Type: Typically available in a TO-220 package, it facilitates effective heat dissipation.
These features make the IPB60R099P7 suitable for various applications in power electronics.
Package
The IPB60R099P7 is packaged in a TO-247 format. This type of package is designed for high-power applications, providing efficient thermal management and easy mounting for power electronic devices.
Pinout
The IPB60R099P7 is an N-channel MOSFET from Infineon Technologies, specifically designed for power applications. It features a TO-220 package with a total of three pins. The pin configuration is as follows:
1. Gate (G): The control terminal that turns the MOSFET on or off by applying a voltage.
2. Drain (D): The terminal through which the main current flows; it connects to the load.
3. Source (S): The terminal connected to ground or the negative side of the power supply, completing the circuit.
This MOSFET is noted for its low on-resistance and high-speed switching capabilities, making it suitable for various applications, including power management, motor control, and converters.
1. Gate (G): The control terminal that turns the MOSFET on or off by applying a voltage.
2. Drain (D): The terminal through which the main current flows; it connects to the load.
3. Source (S): The terminal connected to ground or the negative side of the power supply, completing the circuit.
This MOSFET is noted for its low on-resistance and high-speed switching capabilities, making it suitable for various applications, including power management, motor control, and converters.
Manufacturer
The IPB60R099P7 is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Germany. Infineon specializes in providing a wide range of semiconductor solutions, including power management, automotive, industrial, and security applications. The company is known for its innovation in power electronics, sensors, and microcontrollers, catering to various sectors such as automotive, industrial automation, and consumer electronics. Infineon plays a significant role in advancing technologies like electric vehicles and renewable energy, contributing to the development of sustainable and efficient solutions in the electronics industry.
Application
The IPB60R099P7 is an N-channel MOSFET primarily used in applications such as power management, motor control, switching power supplies, and inverters. Its low on-resistance and high efficiency make it suitable for automotive, industrial, and consumer electronics applications, including DC-DC converters and solar inverters.
Equivalent
The IPB60R099P7 is an N-channel MOSFET from Infineon. Equivalent products include the IRF540, STP60NF06, and AOD60U60. When seeking alternatives, ensure they meet similar voltage, current, and RDS(on) specifications for compatibility. Always check the datasheets for detailed parameters before substitution.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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