画像は参照用のみです。
IPB50N10S3L-16
MOSFETs N-Ch 100V 70A D2PAK-2 OptiMOS-T
- メーカー
- Mfr。パート #IPB50N10S3L-16
- パッケージ
- データシート IPB50N10S3L-16 DataSheet
- 在庫中24387
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Packaging | MouseReel |
| Standard Pack Qty | 1000 |
概要
Description
The IPB50N10S3L-16 is an N-channel MOSFET designed for high-efficiency power switching applications. It features a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 50A, making it suitable for various applications including DC-DC converters, motor drives, and power management systems.
With a low on-resistance (R_DS(on)) typically around 10 mΩ, it offers minimal conduction losses, improving overall efficiency. The device is housed in a TO-220 package, allowing for effective thermal management, which is crucial for high-power operations.
The IPB50N10S3L-16 is characterized by fast switching speeds, enabling it to handle high-frequency applications effectively. Its gate threshold voltage (V_GS(th)) ranges from 2V to 4V, ensuring compatibility with standard driving circuits. Overall, this MOSFET is ideal for engineers seeking reliable performance in demanding environments.
With a low on-resistance (R_DS(on)) typically around 10 mΩ, it offers minimal conduction losses, improving overall efficiency. The device is housed in a TO-220 package, allowing for effective thermal management, which is crucial for high-power operations.
The IPB50N10S3L-16 is characterized by fast switching speeds, enabling it to handle high-frequency applications effectively. Its gate threshold voltage (V_GS(th)) ranges from 2V to 4V, ensuring compatibility with standard driving circuits. Overall, this MOSFET is ideal for engineers seeking reliable performance in demanding environments.
Features
The IPB50N10S3L-16 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 100V, making it suitable for various power applications.
2. Current Rating: The MOSFET can handle continuous drain current (ID) up to 50A, allowing it to be used in high-power scenarios.
3. RDS(on): The on-resistance is low (typically around 16 mΩ at VGS of 10V), which reduces power loss and enhances efficiency.
4. Gate Threshold Voltage: The VGS(th) ranges between 2-4V, enabling easy drive with standard logic levels.
5. Fast Switching Speed: Ideal for applications requiring rapid switching, such as in DC-DC converters or motor drivers.
6. Package Type: Available in a TO-220 package, suitable for heat dissipation.
These features make the IPB50N10S3L-16 suitable for applications in power management, automotive systems, and various industrial uses.
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 100V, making it suitable for various power applications.
2. Current Rating: The MOSFET can handle continuous drain current (ID) up to 50A, allowing it to be used in high-power scenarios.
3. RDS(on): The on-resistance is low (typically around 16 mΩ at VGS of 10V), which reduces power loss and enhances efficiency.
4. Gate Threshold Voltage: The VGS(th) ranges between 2-4V, enabling easy drive with standard logic levels.
5. Fast Switching Speed: Ideal for applications requiring rapid switching, such as in DC-DC converters or motor drivers.
6. Package Type: Available in a TO-220 package, suitable for heat dissipation.
These features make the IPB50N10S3L-16 suitable for applications in power management, automotive systems, and various industrial uses.
Package
The IPB50N10S3L-16 is typically packaged in a TO-220 format. This package type allows for efficient thermal management and is commonly used for power MOSFETs in various applications.
Pinout
The IPB50N10S3L-16 is an N-channel MOSFET commonly used in power applications. It features a TO-220 package with three pins.
1. Gate (G): This pin controls the switching of the MOSFET, allowing it to turn on or off based on the voltage applied.
2. Drain (D): This pin connects to the load, where the main current flows when the device is turned on.
3. Source (S): This pin is connected to the ground or the reference potential in the circuit.
The pin configuration allows for efficient control of high current loads. The IPB50N10S3L-16 supports a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 50A, making it suitable for various applications in power management and switching.
1. Gate (G): This pin controls the switching of the MOSFET, allowing it to turn on or off based on the voltage applied.
2. Drain (D): This pin connects to the load, where the main current flows when the device is turned on.
3. Source (S): This pin is connected to the ground or the reference potential in the circuit.
The pin configuration allows for efficient control of high current loads. The IPB50N10S3L-16 supports a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 50A, making it suitable for various applications in power management and switching.
Manufacturer
The manufacturer of the IPB50N10S3L-16 is Infineon Technologies AG. Infineon is a German semiconductor manufacturer that specializes in a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and automotive electronics. Founded in 1999, Infineon serves various industries such as automotive, industrial, consumer electronics, and communication. The company is known for its focus on innovation and sustainability, providing products that enhance energy efficiency and performance in electronic devices. Infineon is recognized as a leading player in the semiconductor market globally.
Application
The IPB50N10S3L-16 is a N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, motor drives, and power supplies, where efficient switching is critical. It is also suitable for automotive systems, consumer electronics, and renewable energy systems like solar inverters, due to its high efficiency and low on-resistance, allowing for improved thermal performance and reduced energy loss.
Equivalent
The IPB50N10S3L-16 is an N-channel MOSFET from Infineon with a 100V rating and 50A continuous current. Equivalent products include the IRF3205, STP50NF10, and FDP50N10. Always check the datasheets for specific parameters like RDS(on), gate charge, and thermal characteristics to ensure compatibility in your application.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
類似
-
MX25L3233FZBI-08Q
Macronix
-
MX25V5126FM1I
Macronix
-
MX30LF2G28AD-TI
Macronix
-
MX25R6435FBDIL0
Macronix
-
MX29GL512FHXFI-11..
Macronix
-
MX25U51279GXDR00
Macronix
-
MX25U25643GZNI00
Macronix
-
MX25L2006EM1I-12G
Macronix
-
MX25U6435FM2I-10G
Macronix
-
MX25L12833FZ2I-10..
Macronix
-
MX25L12833FZNI-10..
Macronix
-
MX25U25645GXDI00
Macronix