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IPB320N20N3 G
MOSFETs N-Ch 200V 34A D2PAK-2 OptiMOS 3
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- Mfr。パート #IPB320N20N3 G
- パッケージ
- データシート IPB320N20N3 G DataSheet
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| Packaging | MouseReel |
| Standard Pack Qty | 1000 |
概要
Description
The IPB320N20N3 G is a high-performance MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for advanced power management applications. It features a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) rating of 320A, making it suitable for high-voltage and high-current applications.
This device showcases low on-resistance (R_DS(on)), which enhances efficiency and minimizes thermal dissipation during operation. It is commonly used in power supplies, DC-DC converters, motor drives, and other applications requiring efficient power switching.
The IPB320N20N3 G is housed in a TO-220 package, facilitating easy heat dissipation and integration into various designs. It supports fast switching speeds, contributing to improved overall system performance.
Overall, the IPB320N20N3 G is engineered for reliability and efficiency, making it a popular choice in modern electronic systems where power efficiency and thermal management are critical.
This device showcases low on-resistance (R_DS(on)), which enhances efficiency and minimizes thermal dissipation during operation. It is commonly used in power supplies, DC-DC converters, motor drives, and other applications requiring efficient power switching.
The IPB320N20N3 G is housed in a TO-220 package, facilitating easy heat dissipation and integration into various designs. It supports fast switching speeds, contributing to improved overall system performance.
Overall, the IPB320N20N3 G is engineered for reliability and efficiency, making it a popular choice in modern electronic systems where power efficiency and thermal management are critical.
Features
The IPB320N20N3 G is an N-channel MOSFET designed for high-performance applications. Key features include:
- Voltage Rating: It has a maximum drain-source voltage (V_DS) of 200V.
- Continuous Drain Current: Capable of handling up to 320A, making it suitable for high-power applications.
- Low On-Resistance (R_DS(on)): Typically around 6.5 mΩ, which minimizes power loss and enhances efficiency.
- Fast Switching Speed: Facilitates efficient operation in switching applications, reducing switching losses.
- Thermal Resistance: Features low thermal resistance, enabling better heat dissipation, enhancing reliability.
- Package Type: Typically available in a TO-220 or similar package, facilitating easy heat sinking.
- Applications: Commonly used in power supplies, motor drives, and high-efficiency converters.
Overall, the IPB320N20N3 G is engineered for applications requiring high current handling, efficient switching, and robust thermal performance.
- Voltage Rating: It has a maximum drain-source voltage (V_DS) of 200V.
- Continuous Drain Current: Capable of handling up to 320A, making it suitable for high-power applications.
- Low On-Resistance (R_DS(on)): Typically around 6.5 mΩ, which minimizes power loss and enhances efficiency.
- Fast Switching Speed: Facilitates efficient operation in switching applications, reducing switching losses.
- Thermal Resistance: Features low thermal resistance, enabling better heat dissipation, enhancing reliability.
- Package Type: Typically available in a TO-220 or similar package, facilitating easy heat sinking.
- Applications: Commonly used in power supplies, motor drives, and high-efficiency converters.
Overall, the IPB320N20N3 G is engineered for applications requiring high current handling, efficient switching, and robust thermal performance.
Package
The IPB320N20N3 G is typically packaged in a TO-220 form factor. This package type is designed for high-power applications, offering good thermal performance and ease of mounting to heat sinks.
Pinout
The IPB320N20N3 G is an N-channel MOSFET with a pin count of 6. Its primary functions include acting as a switch in power applications, offering high efficiency and low on-resistance. The pinout configuration typically consists of the following:
1. Gate (G) - Controls the MOSFET operation.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The terminal connected to the ground or negative supply.
The device is designed for high-performance applications, such as in power management and conversion setups, due to its capability to handle high currents and voltages efficiently. For specific applications and detailed electrical characteristics, refer to the manufacturer's datasheet.
1. Gate (G) - Controls the MOSFET operation.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The terminal connected to the ground or negative supply.
The device is designed for high-performance applications, such as in power management and conversion setups, due to its capability to handle high currents and voltages efficiently. For specific applications and detailed electrical characteristics, refer to the manufacturer's datasheet.
Manufacturer
The IPB320N20N3 G is manufactured by Infineon Technologies AG. Infineon is a global semiconductor company headquartered in Germany, specializing in the development and production of a wide range of semiconductor solutions. Their products include microcontrollers, power semiconductors, sensors, and integrated circuits used in automotive, industrial, and consumer applications. Infineon focuses on energy efficiency, mobility, and security solutions, making it a key player in the semiconductor industry with a strong emphasis on innovation and sustainability.
Application
The IPB320N20N3 G is a N-channel MOSFET primarily used in power management applications. Its key areas include industrial motor drives, power supplies, switch-mode power supplies (SMPS), and electric vehicles. It is also suitable for high-efficiency converters, automotive applications, and renewable energy systems, where high voltage and current handling are required.
Equivalent
The IPB320N20N3 G is a N-channel MOSFET. Equivalent products include:
1. IRF320
2. STP320N20
3. BSC320N20
4. FDP320N20A
Always verify specifications such as voltage, current rating, Rds(on), and package type before substituting.
1. IRF320
2. STP320N20
3. BSC320N20
4. FDP320N20A
Always verify specifications such as voltage, current rating, Rds(on), and package type before substituting.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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