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IPB180N10S4-02

Name: IPB180N10S4-02
Rating: 4.7 (12 reviews)

MOSFETs N-Ch 100V 180A D2PAK-6

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Mfr。パート #IPB180N10S4-02
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データシート IPB180N10S4-02 DataSheet
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仕様

Packaging	MouseReel
Standard Pack Qty	1000

概要

Description

The IPB180N10S4-02 is a N-channel MOSFET designed for high-performance applications, typically used in power management, switching, and amplifier circuits. With a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 180A, it is suitable for high-power applications. This MOSFET features low on-resistance (R_DS(on)), which enhances efficiency by minimizing power losses during operation.
It has a fast switching speed, making it ideal for use in DC-DC converters, motor drivers, and other power electronics. The IPB180N10S4-02 is housed in a robust TO-220 package, facilitating effective heat dissipation. Its gate threshold voltage allows for easy interfacing with standard logic levels, making it versatile for various circuit designs. This component is widely used in electric vehicles, renewable energy systems, and industrial applications due to its reliable performance and durability.

Features

The IPB180N10S4-02 is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
- Voltage Rating: 100V, allowing it to handle high voltage applications.
- Continuous Drain Current: Up to 180A, making it suitable for high current applications.
- RDS(on): Low on-resistance (typically around 4.5 mΩ), which minimizes power loss and improves efficiency.
- Gate Threshold Voltage: Optimized for low gate drive requirements, supporting easy interfacing with standard logic levels.
- Package Type: Available in a TO-220 package, providing effective heat dissipation.
- Fast Switching Speed: Suitable for high-frequency applications, enhancing performance in switch-mode power supplies and converters.
Overall, the IPB180N10S4-02 is ideal for applications such as motor drives, power management, and renewable energy systems due to its robust performance characteristics.

Package

The IPB180N10S4-02 is housed in a TO-220 package type, which is commonly used for power MOSFETs due to its effective heat dissipation and ease of mounting.

Pinout

The IPB180N10S4-02 is a N-channel MOSFET commonly used in power applications. It has a total of 5 pins, which are generally assigned the following functions:
1. Gate (G) - The input terminal that controls the MOSFET's switching.
2. Drain (D) - The terminal through which the main current flows out of the MOSFET.
3. Source (S) - The terminal through which the main current enters the MOSFET.
4. Body (B) - Internal to the device and typically connected to the source; serves as a parasitic diode.
The specific pin configuration may vary based on the package type, but a typical configuration would be:
1. Gate
2. Drain
3. Source
4. Body (internally connected)
Ensure to consult the manufacturer's datasheet for precise pin assignments and additional specifications.

Manufacturer

The IPB180N10S4-02 is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in the development and production of a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. The company primarily focuses on applications in automotive, industrial, and multi-market sectors, providing products that enhance energy efficiency, safety, and connectivity in various electronic systems. With a strong emphasis on innovation and sustainability, Infineon plays a significant role in advancing technologies for electric mobility, renewable energy, and smart manufacturing.

Application

The IPB180N10S4-02 is an N-channel MOSFET primarily used in power management applications, including DC-DC converters, motor drives, and switching power supplies. It is suitable for industrial automation, renewable energy systems, and electric vehicle applications due to its high efficiency, fast switching capabilities, and robust thermal performance.

Equivalent

The IPB180N10S4-02 is an N-channel MOSFET primarily used in power applications. Equivalent products include the IRF180, STP180N10, and BSC180N10. When selecting a substitute, ensure similar specifications such as V_DS (drain-source voltage), I_D (continuous drain current), and R_DS(on) (on-resistance) to ensure compatibility. Always check the datasheets for exact parameters.