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IPB120N04S4L-02
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- Mfr。パート #IPB120N04S4L-02
- パッケージ
- データシート IPB120N04S4L-02 DataSheet
- 在庫中2602
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仕様
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | D2PAK-3 (TO-263-3) |
| Height | 4.4 mm |
| Length | 10 mm |
| Width | 9.25 mm |
| Unit Weight | 0.139332 oz |
概要
Description
The IPB120N04S4L-02 is a N-channel MOSFET designed for high-efficiency power management applications. With a voltage rating of 40V and a continuous drain current of up to 120A, it is suitable for use in various circuits, including DC-DC converters and motor drives. The device features a low on-resistance (R_DS(on)), which minimizes power losses and enhances thermal performance.
The IPB120N04S4L-02 is housed in a robust TO-220 package, facilitating effective heat dissipation. Its fast switching capabilities make it ideal for applications requiring rapid response times. The MOSFET is typically used in industrial, automotive, and consumer electronics for efficient power control and management.
Overall, the IPB120N04S4L-02 is a versatile component that aids in optimizing energy efficiency in electronic designs.
The IPB120N04S4L-02 is housed in a robust TO-220 package, facilitating effective heat dissipation. Its fast switching capabilities make it ideal for applications requiring rapid response times. The MOSFET is typically used in industrial, automotive, and consumer electronics for efficient power control and management.
Overall, the IPB120N04S4L-02 is a versatile component that aids in optimizing energy efficiency in electronic designs.
Features
The IPB120N04S4L-02 is an N-channel MOSFET designed for high-efficiency power conversion applications. Key features include:
1. Low On-Resistance (RDS(on)): Typically around 4.5 mΩ at VGS = 10V, which minimizes conduction losses.
2. High Current Rating: Can handle continuous drain currents up to 120A, making it suitable for demanding applications.
3. Fast Switching Speed: Enables efficient performance in high-frequency applications, reducing switching losses.
4. High Voltage Rating: Supports drain-source voltage (VDS) up to 40V, suitable for various power supply designs.
5. Low Gate Charge (QG): Results in reduced drive requirements and improved efficiency in switching circuits.
6. Thermal Stability: Features a rugged design that offers reliable operation under high thermal conditions.
These characteristics make the IPB120N04S4L-02 ideal for use in power supplies, DC-DC converters, and other applications requiring efficient power management.
1. Low On-Resistance (RDS(on)): Typically around 4.5 mΩ at VGS = 10V, which minimizes conduction losses.
2. High Current Rating: Can handle continuous drain currents up to 120A, making it suitable for demanding applications.
3. Fast Switching Speed: Enables efficient performance in high-frequency applications, reducing switching losses.
4. High Voltage Rating: Supports drain-source voltage (VDS) up to 40V, suitable for various power supply designs.
5. Low Gate Charge (QG): Results in reduced drive requirements and improved efficiency in switching circuits.
6. Thermal Stability: Features a rugged design that offers reliable operation under high thermal conditions.
These characteristics make the IPB120N04S4L-02 ideal for use in power supplies, DC-DC converters, and other applications requiring efficient power management.
Package
The IPB120N04S4L-02 is typically packaged in a TO-220 or similar package type, suitable for power applications. This package facilitates efficient heat dissipation and is commonly used in power MOSFETs for various electronic applications.
Pinout
The IPB120N04S4L-02 is an N-channel MOSFET from Infineon Technologies, designed for high-efficiency power applications. It features a package with a total of 5 pins.
Pin Count and Functions:
1. Gate (G): This pin controls the MOSFET's on/off state by receiving the gate voltage.
2. Drain (D): This pin is where the load is connected; it allows current to flow from drain to source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or negative side of the load, completing the circuit when the MOSFET is activated.
4. Body Diode: Although not a pin, it is an intrinsic part of the MOSFET allowing current to flow in the reverse direction when the device is off.
The device is designed for applications requiring high-current handling and low on-resistance, ideal for power management and switching applications.
Pin Count and Functions:
1. Gate (G): This pin controls the MOSFET's on/off state by receiving the gate voltage.
2. Drain (D): This pin is where the load is connected; it allows current to flow from drain to source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or negative side of the load, completing the circuit when the MOSFET is activated.
4. Body Diode: Although not a pin, it is an intrinsic part of the MOSFET allowing current to flow in the reverse direction when the device is off.
The device is designed for applications requiring high-current handling and low on-resistance, ideal for power management and switching applications.
Manufacturer
The IPB120N04S4L-02 is manufactured by Infineon Technologies AG. Infineon is a German semiconductor manufacturer that specializes in power semiconductors, microcontrollers, sensors, and other semiconductor solutions. The company serves various industries, including automotive, industrial, and consumer electronics. Infineon is known for its innovations in power management and energy efficiency, making it a key player in the development of technologies for electric vehicles, renewable energy, and smart grids.
Application
The IPB120N04S4L-02 is an N-channel MOSFET primarily used in applications such as power management, DC-DC converters, motor drivers, and automotive systems. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency power supplies, industrial automation, and renewable energy systems. Additionally, it can be utilized in electric vehicles and various consumer electronics for efficient power regulation.
Equivalent
The IPB120N04S4L-02 is an N-channel MOSFET. Equivalent products include the IRF3205, AOD320, and STP120N04. When looking for alternatives, consider specifications such as voltage rating, current rating, RDS(on), and package type to ensure compatibility with your application. Always verify datasheets for precise matching.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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