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IPB107N20N3 G
MOSFETs N-Ch 200V 88A D2PAK-2 OptiMOS 3
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- Mfr。パート #IPB107N20N3 G
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- データシート IPB107N20N3 G DataSheet
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| Packaging | MouseReel |
| Standard Pack Qty | 1000 |
概要
Description
The IPB107N20N3 G is a high-performance N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for use in power management applications. With a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of 107A, it is suitable for high-voltage and high-current environments. The device features low on-resistance (R_DS(on)), which enhances efficiency and reduces power loss during operation.
The IPB107N20N3 G is typically utilized in applications such as switch-mode power supplies (SMPS), DC-DC converters, and motor drives, where efficient switching performance is critical. Its robust thermal management capabilities and fast switching speeds make it ideal for demanding electronic designs.
This MOSFET is packaged in a TO-220 format, allowing for effective heat dissipation and easy mounting. Overall, the IPB107N20N3 G is a reliable choice for engineers looking to optimize power efficiency and performance in their electronic designs.
The IPB107N20N3 G is typically utilized in applications such as switch-mode power supplies (SMPS), DC-DC converters, and motor drives, where efficient switching performance is critical. Its robust thermal management capabilities and fast switching speeds make it ideal for demanding electronic designs.
This MOSFET is packaged in a TO-220 format, allowing for effective heat dissipation and easy mounting. Overall, the IPB107N20N3 G is a reliable choice for engineers looking to optimize power efficiency and performance in their electronic designs.
Features
The IPB107N20N3 G is a N-channel MOSFET designed for high efficiency in various power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 200V, suitable for high-voltage applications.
2. Current Rating: Continuous drain current (I_D) is up to 107A, enabling robust performance in demanding environments.
3. R_DS(on): The on-resistance is low, typically around 0.074 ohms at a gate-source voltage (V_GS) of 10V, which minimizes power loss during operation.
4. Fast Switching: Designed for fast switching speeds, it is ideal for applications in power converters, inverters, and motor drives.
5. Thermal Performance: It features a TO-220 package for efficient heat dissipation, ensuring reliable operation under high power conditions.
6. Applications: Commonly used in automotive and industrial applications, including battery management systems and power supply circuits.
Overall, the IPB107N20N3 G is engineered for high performance in power management applications.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 200V, suitable for high-voltage applications.
2. Current Rating: Continuous drain current (I_D) is up to 107A, enabling robust performance in demanding environments.
3. R_DS(on): The on-resistance is low, typically around 0.074 ohms at a gate-source voltage (V_GS) of 10V, which minimizes power loss during operation.
4. Fast Switching: Designed for fast switching speeds, it is ideal for applications in power converters, inverters, and motor drives.
5. Thermal Performance: It features a TO-220 package for efficient heat dissipation, ensuring reliable operation under high power conditions.
6. Applications: Commonly used in automotive and industrial applications, including battery management systems and power supply circuits.
Overall, the IPB107N20N3 G is engineered for high performance in power management applications.
Package
The IPB107N20N3 G is packaged in a TO-220 format. This type of package is commonly used for power transistors and devices, providing good thermal performance and ease of mounting to heatsinks.
Pinout
The IPB107N20N3 G is a N-channel MOSFET manufactured by Infineon Technologies. It features a TO-220 package with a total of three pins.
Pin Configuration:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin connects to the load. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply, completing the circuit.
Functionality:
The IPB107N20N3 G is designed for high-efficiency switching applications, making it suitable for power management in various electronic devices, including power supplies and motor drives. It has a low on-resistance and can handle high currents, contributing to improved thermal performance and energy efficiency.
Pin Configuration:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin connects to the load. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply, completing the circuit.
Functionality:
The IPB107N20N3 G is designed for high-efficiency switching applications, making it suitable for power management in various electronic devices, including power supplies and motor drives. It has a low on-resistance and can handle high currents, contributing to improved thermal performance and energy efficiency.
Manufacturer
The manufacturer of the IPB107N20N3 G is Infineon Technologies AG. Infineon is a German semiconductor manufacturer that specializes in producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and automotive components. The company is known for its focus on innovation in areas such as energy efficiency, mobility, and security, serving various industries including automotive, industrial, and consumer electronics. Infineon plays a significant role in the advancement of technologies like electric vehicles and renewable energy systems.
Application
The IPB107N20N3 G is an N-channel MOSFET used primarily in power electronics applications. Its areas of application include:
1. DC-DC Converters: Efficient power conversion in various electronic devices.
2. Motor Control: Driving electric motors in automotive and industrial applications.
3. Power Management: Power supply circuits for computers and consumer electronics.
4. Switching Regulators: Used in high-efficiency power supplies.
5. LED Drivers: Control of LED lighting systems.
Its low on-resistance and high current handling make it suitable for these applications.
1. DC-DC Converters: Efficient power conversion in various electronic devices.
2. Motor Control: Driving electric motors in automotive and industrial applications.
3. Power Management: Power supply circuits for computers and consumer electronics.
4. Switching Regulators: Used in high-efficiency power supplies.
5. LED Drivers: Control of LED lighting systems.
Its low on-resistance and high current handling make it suitable for these applications.
Equivalent
The IPB107N20N3 G is an N-channel MOSFET typically used in power applications. Equivalent products include the IRF3205, STP75NF75, and FDP75N06. Always verify specifications like voltage, current ratings, and RDS(on) to ensure compatibility for your specific application.
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