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IPB100N04S4-H2
MOSFETs N-Ch 40V 100A D2PAK-2 OptiMOS-T2
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- Mfr。パート #IPB100N04S4-H2
- パッケージ
- データシート IPB100N04S4-H2 DataSheet
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仕様
| Packaging | MouseReel |
| Standard Pack Qty | 1000 |
概要
Description
The IPB100N04S4-H2 is an N-channel MOSFET designed for high-efficiency power management applications. It features a low on-resistance (RDS(on)) of 4 mΩ, enabling minimal power loss and heat generation during operation, which is crucial for applications such as DC-DC converters, motor drives, and power supplies. The device is rated for a maximum drain-source voltage (VDS) of 40V and can handle a continuous drain current (ID) of up to 100A, making it suitable for high-current applications.
Additionally, the IPB100N04S4-H2 features a fast switching speed, which enhances efficiency in high-frequency applications. It is housed in a TO-220 package, facilitating easy heat dissipation and mounting. This MOSFET is ideal for use in automotive, industrial, and consumer electronics where reliable power control is essential. Overall, its combination of low resistance, high current capability, and fast switching makes it a popular choice in modern electronic designs.
Additionally, the IPB100N04S4-H2 features a fast switching speed, which enhances efficiency in high-frequency applications. It is housed in a TO-220 package, facilitating easy heat dissipation and mounting. This MOSFET is ideal for use in automotive, industrial, and consumer electronics where reliable power control is essential. Overall, its combination of low resistance, high current capability, and fast switching makes it a popular choice in modern electronic designs.
Features
The IPB100N04S4-H2 is an N-channel power MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, making it suitable for various power conversion applications.
2. Current Handling: The device can handle a continuous drain current (I_D) of up to 100A, allowing it to manage high power loads effectively.
3. Low R_DS(on): With a low on-resistance (R_DS(on)) typically around 4 mΩ, it minimizes conduction losses, enhancing overall efficiency.
4. Fast Switching: Optimized for fast switching speeds, it is suitable for applications like synchronous rectification and DC-DC converters.
5. Thermal Performance: Designed with robust thermal characteristics, it supports high power density applications.
6. Package: Available in DPAK (TO-252) packaging, facilitating easy integration into various circuit designs.
Overall, the IPB100N04S4-H2 is well-suited for applications requiring high performance and efficiency in power management systems.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, making it suitable for various power conversion applications.
2. Current Handling: The device can handle a continuous drain current (I_D) of up to 100A, allowing it to manage high power loads effectively.
3. Low R_DS(on): With a low on-resistance (R_DS(on)) typically around 4 mΩ, it minimizes conduction losses, enhancing overall efficiency.
4. Fast Switching: Optimized for fast switching speeds, it is suitable for applications like synchronous rectification and DC-DC converters.
5. Thermal Performance: Designed with robust thermal characteristics, it supports high power density applications.
6. Package: Available in DPAK (TO-252) packaging, facilitating easy integration into various circuit designs.
Overall, the IPB100N04S4-H2 is well-suited for applications requiring high performance and efficiency in power management systems.
Package
The IPB100N04S4-H2 is packaged in a TO-220 form factor. This type of package is designed for efficient heat dissipation and is commonly used for power MOSFETs in various applications.
Pinout
The IPB100N04S4-H2 is an N-channel MOSFET used in various power applications. It has a total of 6 pins. The pin configuration is as follows:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The terminal through which the load current flows.
3. Source (S) - The terminal connected to the ground or the lower potential.
Typically, the pins are arranged in a standard TO-220 package, but it's essential to refer to the specific datasheet for detailed pin layout and electrical characteristics for accurate application. The MOSFET is designed to handle high current and voltage, making it suitable for situations such as power management in converters and motor drives.
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The terminal through which the load current flows.
3. Source (S) - The terminal connected to the ground or the lower potential.
Typically, the pins are arranged in a standard TO-220 package, but it's essential to refer to the specific datasheet for detailed pin layout and electrical characteristics for accurate application. The MOSFET is designed to handle high current and voltage, making it suitable for situations such as power management in converters and motor drives.
Manufacturer
The IPB100N04S4-H2 is manufactured by Infineon Technologies AG, a leading semiconductor company based in Germany. Infineon specializes in providing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors, serving various industries such as automotive, industrial, and consumer electronics. The company is known for its innovations in power management and energy efficiency, contributing to advancements in various applications like electric vehicles and renewable energy systems.
Application
The IPB100N04S4-H2 is a high-performance N-channel MOSFET used in various applications, including power supplies, DC-DC converters, motor drivers, and electric vehicles. Its low on-resistance and fast switching capabilities make it suitable for applications requiring efficient power management and thermal performance. Additionally, it is used in renewable energy systems, such as solar inverters, and industrial automation processes.
Equivalent
The IPB100N04S4-H2 is an N-channel MOSFET typically used in power applications. Equivalent products include the Infineon BSC100N04LS G, STMicroelectronics STP100N04, and ON Semiconductor NTP100N04. Always verify specifications like voltage, current ratings, and RDS(on) for compatibility.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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