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IPB036N12N3GATMA1
MOSFET N-CH 120V 180A TO263-7
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- Mfr。パート #IPB036N12N3GATMA1
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- データシート IPB036N12N3GATMA1 DataSheet
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仕様
| Series | OptiMOS™ |
| Part Status | Active |
| Base Product Number | IPB036 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 120 V |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 270µA |
| Gate Charge (Qg) (Max) @ Vgs | 211 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 13800 pF @ 60 V |
| Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-7 |
| Package | TO-263-7, D2PAK (6 Leads + Tab) |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
概要
Description
The IPB036N12N3GATMA1 is a high-performance N-channel MOSFET designed for power management applications. It features a maximum drain-source voltage (Vds) of 120V and a continuous drain current (Id) rating of 36A, making it suitable for a wide range of applications, including DC-DC converters, automotive systems, and industrial power supplies.
This MOSFET is known for its low on-resistance (Rds(on)), which enhances efficiency and reduces heat generation during operation. It is packaged in a TO-220 format, facilitating easy heat dissipation.
Key specifications include a gate-source voltage (Vgs) rating of ±20V and a total gate charge (Qg) that contributes to its fast switching capabilities. The device is optimized for high-speed switching applications, providing reliable performance in demanding environments.
Overall, the IPB036N12N3GATMA1 is ideal for engineers looking for a robust and efficient solution in power electronic designs.
This MOSFET is known for its low on-resistance (Rds(on)), which enhances efficiency and reduces heat generation during operation. It is packaged in a TO-220 format, facilitating easy heat dissipation.
Key specifications include a gate-source voltage (Vgs) rating of ±20V and a total gate charge (Qg) that contributes to its fast switching capabilities. The device is optimized for high-speed switching applications, providing reliable performance in demanding environments.
Overall, the IPB036N12N3GATMA1 is ideal for engineers looking for a robust and efficient solution in power electronic designs.
Features
The IPB036N12N3GATMA1 is a N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 120V, making it suitable for various power applications.
2. Current Rating: Capable of handling continuous drain current (ID) up to 36A, providing robust performance for demanding loads.
3. RDS(on): Offers a low on-state resistance (RDS(on)) of approximately 3.6 mΩ at VGS = 10V, which significantly reduces conduction losses and enhances thermal performance.
4. Fast Switching: Designed for fast switching speeds, which improves efficiency in switching power supplies and converters.
5. Package Type: Typically comes in a TO-220 package, facilitating effective heat dissipation and ease of mounting.
6. Temperature Range: Operates within a wide ambient temperature range, enhancing reliability in various environments.
These features make the IPB036N12N3GATMA1 suitable for applications in industrial, automotive, and consumer electronics where efficiency and thermal management are critical.
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 120V, making it suitable for various power applications.
2. Current Rating: Capable of handling continuous drain current (ID) up to 36A, providing robust performance for demanding loads.
3. RDS(on): Offers a low on-state resistance (RDS(on)) of approximately 3.6 mΩ at VGS = 10V, which significantly reduces conduction losses and enhances thermal performance.
4. Fast Switching: Designed for fast switching speeds, which improves efficiency in switching power supplies and converters.
5. Package Type: Typically comes in a TO-220 package, facilitating effective heat dissipation and ease of mounting.
6. Temperature Range: Operates within a wide ambient temperature range, enhancing reliability in various environments.
These features make the IPB036N12N3GATMA1 suitable for applications in industrial, automotive, and consumer electronics where efficiency and thermal management are critical.
Package
The IPB036N12N3GATMA1 is packaged in a TO-220 form factor, which is suitable for power transistors. This package type provides efficient heat dissipation and is commonly used in applications requiring high power handling and thermal management.
Pinout
The IPB036N12N3GATMA1 is a N-channel MOSFET designed for power management applications. It features a pin count of five and the following functions for each pin:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The terminal that connects to the ground or negative side of the power supply.
The device is suitable for high-efficiency applications due to its low R_DS(on) and fast switching characteristics. It is often used in power converters, motor drives, and other applications requiring reliable high-speed switching.
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The terminal that connects to the ground or negative side of the power supply.
The device is suitable for high-efficiency applications due to its low R_DS(on) and fast switching characteristics. It is often used in power converters, motor drives, and other applications requiring reliable high-speed switching.
Manufacturer
The manufacturer of the IPB036N12N3GATMA1 is Infineon Technologies. Infineon is a global semiconductor company headquartered in Germany, specializing in the development and production of semiconductor solutions for various applications, including automotive, industrial, and communication sectors. The company focuses on power semiconductors, microcontrollers, and sensors, and is known for its innovations in energy efficiency and performance. Infineon plays a significant role in enabling technologies for a sustainable future, including electric mobility and renewable energy.
Application
The IPB036N12N3GATMA1 is a N-channel MOSFET used primarily in power management applications. Its areas of application include DC-DC converters, motor drives, power supplies, and battery management systems. It is suitable for high-efficiency switching applications and can be used in automotive, industrial, and consumer electronics for energy conversion and control.
Equivalent
The IPB036N12N3GATMA1 is an N-channel MOSFET from Infineon. Equivalent products include the IRF3205 (International Rectifier), STP36NF06 (STMicroelectronics), and BSC030N12NS3 (Infineon). However, always verify specifications such as V_DS, I_D, R_DS(on), and package type for compatibility in your specific application.
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