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IPB020N10N5
MOSFETs N-Ch 100V 120A D2PAK-2
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- Mfr。パート #IPB020N10N5
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- データシート IPB020N10N5 DataSheet
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仕様
| Packaging | MouseReel |
| Standard Pack Qty | 1000 |
概要
Description
The IPB020N10N5 is a high-performance N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for power applications. It features a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) rating of 20A. The MOSFET is known for its low on-resistance (R_DS(on)), which minimizes power loss and heat generation during operation, making it suitable for efficient switching applications.
This component is typically used in power supplies, motor drivers, and various high-frequency applications where fast switching speeds are essential. It can handle high switching frequencies while maintaining thermal stability. The package usually comes in a TO-220 or similar form factor, facilitating easy heat dissipation.
Key specifications often include low gate threshold voltage and excellent thermal performance, making it a popular choice among engineers for designs requiring reliable performance under demanding conditions.
This component is typically used in power supplies, motor drivers, and various high-frequency applications where fast switching speeds are essential. It can handle high switching frequencies while maintaining thermal stability. The package usually comes in a TO-220 or similar form factor, facilitating easy heat dissipation.
Key specifications often include low gate threshold voltage and excellent thermal performance, making it a popular choice among engineers for designs requiring reliable performance under demanding conditions.
Features
The IPB020N10N5 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various high-voltage applications.
2. Current Handling: The device can handle a continuous drain current (I_D) of up to 20A, which is beneficial for high-power circuit designs.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) of around 2.0 mΩ, reducing power losses during operation and improving efficiency.
4. Fast Switching: The MOSFET is optimized for fast switching speeds, making it ideal for applications like DC-DC converters, motor drivers, and power management systems.
5. Package Type: Typically available in a TO-220 package, facilitating better heat dissipation and ease of mounting.
Overall, the IPB020N10N5 is suitable for applications requiring high performance and reliability in power management solutions.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various high-voltage applications.
2. Current Handling: The device can handle a continuous drain current (I_D) of up to 20A, which is beneficial for high-power circuit designs.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) of around 2.0 mΩ, reducing power losses during operation and improving efficiency.
4. Fast Switching: The MOSFET is optimized for fast switching speeds, making it ideal for applications like DC-DC converters, motor drivers, and power management systems.
5. Package Type: Typically available in a TO-220 package, facilitating better heat dissipation and ease of mounting.
Overall, the IPB020N10N5 is suitable for applications requiring high performance and reliability in power management solutions.
Package
The IPB020N10N5 is typically packaged in a TO-220 format. This packaging provides effective thermal management and allows for easy heat dissipation, making it suitable for high-power applications.
Pinout
The IPB020N10N5 is an N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET operation. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the main current flows into the MOSFET. It connects to the load.
3. Source (S): This pin is where the current exits the MOSFET. It is typically connected to the ground in low-side switching applications.
The IPB020N10N5 is designed for high-efficiency power switching applications, featuring low on-resistance and high-speed performance. Its typical maximum ratings include a drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 20A. This component is commonly used in power management circuits, DC-DC converters, and motor control applications.
1. Gate (G): This pin controls the MOSFET operation. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the main current flows into the MOSFET. It connects to the load.
3. Source (S): This pin is where the current exits the MOSFET. It is typically connected to the ground in low-side switching applications.
The IPB020N10N5 is designed for high-efficiency power switching applications, featuring low on-resistance and high-speed performance. Its typical maximum ratings include a drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 20A. This component is commonly used in power management circuits, DC-DC converters, and motor control applications.
Manufacturer
The IPB020N10N5 is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in designing and producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and automotive electronics. The company serves various industries, including automotive, industrial, and consumer electronics, focusing on innovation in energy efficiency, connectivity, and security. Infineon is recognized for its high-performance power MOSFETs, and the IPB020N10N5 is a specific model of N-channel MOSFET designed for applications requiring efficient power management.
Application
The IPB020N10N5 is an N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, motor drives, power supplies, and inverters. It can also be used in automotive applications, battery management systems, and renewable energy systems due to its high efficiency and fast switching capabilities.
Equivalent
The IPB020N10N5 is a N-channel MOSFET from Infineon. Equivalent products include the IRF3205 from Infineon, the FDB6030BL from ON Semiconductor, and the STP75NF75 from STMicroelectronics. When searching for equivalents, ensure to check specifications like voltage, current ratings, RDS(on), and package type for compatibility.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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