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IPB017N10N5ATMA1
MOSFET N-CH 100V 180A TO263-7
- メーカー
- Mfr。パート #IPB017N10N5ATMA1
- パッケージ TO-263-7
- データシート IPB017N10N5ATMA1 DataSheet
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | OptiMOS™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 180A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 6V, 10V |
| RdsOn(Max)@IdVgs | 1.7mOhm @ 100A, 10V |
| Vgs(th)(Max)@Id | 3.8V @ 279µA |
| GateCharge(Qg)(Max)@Vgs | 210 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 15600 pF @ 50 V |
| PowerDissipation(Max) | 375W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PG-TO263-7 |
概要
Description
The IPB017N10N5ATMA1 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power applications. This component features a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 17A, making it suitable for various switching and amplifying tasks in power management systems.
Key specifications include a low on-resistance (R_DS(on)) of approximately 17 mΩ, ensuring minimal power loss during operation. Its fast switching capabilities enhance overall system performance, making it ideal for use in applications such as DC-DC converters, motor drivers, and power inverters.
The MOSFET is typically housed in a TO-220 package, facilitating efficient heat dissipation and easy mounting on PCBs. The IPB017N10N5ATMA1 is often chosen for its reliability, thermal performance, and ability to handle substantial load currents, making it a popular choice among engineers in power electronics design.
Key specifications include a low on-resistance (R_DS(on)) of approximately 17 mΩ, ensuring minimal power loss during operation. Its fast switching capabilities enhance overall system performance, making it ideal for use in applications such as DC-DC converters, motor drivers, and power inverters.
The MOSFET is typically housed in a TO-220 package, facilitating efficient heat dissipation and easy mounting on PCBs. The IPB017N10N5ATMA1 is often chosen for its reliability, thermal performance, and ability to handle substantial load currents, making it a popular choice among engineers in power electronics design.
Features
The IPB017N10N5ATMA1 is an N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (Vds) of 100V, suitable for high-voltage applications.
2. On-Resistance: Low on-resistance (Rds(on)) of approximately 17 mΩ, enabling efficient power conduction and reduced heat generation.
3. Current Handling: Continuous drain current (Id) capability of up to 17A, making it suitable for various power applications.
4. Gate Threshold Voltage (Vgs(th)): Typically around 2-4V, allowing for easy compatibility with low-voltage control signals.
5. Package Type: Available in an TO-220 package, which provides good thermal performance and ease of mounting.
6. Fast Switching: High-speed switching capabilities, ideal for applications such as DC-DC converters, motor drives, and power supplies.
7. Robustness: Built to withstand high thermal and electrical stresses, enhancing reliability in demanding environments.
This combination of features makes the IPB017N10N5ATMA1 an excellent choice for power management in various electronic devices.
1. Voltage Rating: Maximum drain-source voltage (Vds) of 100V, suitable for high-voltage applications.
2. On-Resistance: Low on-resistance (Rds(on)) of approximately 17 mΩ, enabling efficient power conduction and reduced heat generation.
3. Current Handling: Continuous drain current (Id) capability of up to 17A, making it suitable for various power applications.
4. Gate Threshold Voltage (Vgs(th)): Typically around 2-4V, allowing for easy compatibility with low-voltage control signals.
5. Package Type: Available in an TO-220 package, which provides good thermal performance and ease of mounting.
6. Fast Switching: High-speed switching capabilities, ideal for applications such as DC-DC converters, motor drives, and power supplies.
7. Robustness: Built to withstand high thermal and electrical stresses, enhancing reliability in demanding environments.
This combination of features makes the IPB017N10N5ATMA1 an excellent choice for power management in various electronic devices.
Package
The IPB017N10N5ATMA1 is packaged in a TO-220 form factor. This package type is commonly used for power transistors, providing good thermal performance and ease of mounting for heat dissipation.
Pinout
The IPB017N10N5ATMA1 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-efficiency applications. It typically features a TO-220 package, which has three pins.
The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This is the terminal where the load is connected. It carries the current from the source to the load when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or negative side of the circuit. It serves as the return path for current flowing through the MOSFET.
In summary, the IPB017N10N5ATMA1 has a total of three pins (Gate, Drain, Source), serving distinct roles in switching and amplifying electronic signals.
The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This is the terminal where the load is connected. It carries the current from the source to the load when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or negative side of the circuit. It serves as the return path for current flowing through the MOSFET.
In summary, the IPB017N10N5ATMA1 has a total of three pins (Gate, Drain, Source), serving distinct roles in switching and amplifying electronic signals.
Manufacturer
The IPB017N10N5ATMA1 is manufactured by Infineon Technologies AG. Infineon is a leading global semiconductor manufacturer based in Germany, specializing in a wide range of products including power semiconductors, microcontrollers, and sensors. The company serves various industries such as automotive, industrial power control, and Internet of Things (IoT) applications. Infineon is known for its innovations in power management and efficiency, making it a key player in enabling sustainable energy solutions and advanced electronic systems.
Application
The IPB017N10N5ATMA1 is a N-channel MOSFET primarily used in power management applications. Its key applications include DC-DC converters, motor drives, power supplies, and battery management systems. It is suitable for use in inverter circuits, energy-efficient devices, and various consumer electronics due to its high efficiency and low on-resistance characteristics.
Equivalent
The IPB017N10N5ATMA1 is a N-channel MOSFET. Equivalent products include the IRF3205, STP75NF75, and FQP30N06L. Always verify specifications such as voltage, current, and Rds(on) to ensure compatibility for your specific application.
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