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IPB017N08N5
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- Mfr。パート #IPB017N08N5
- パッケージ
- データシート
- 在庫中6580
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仕様
| Technology | Si |
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Series | OptiMOS 5 |
| Factory Pack Quantity:Factory Pack Quantity | 1000 |
| Subcategory | Transistors |
| Part # Aliases | SP001132472 IPB017N08N5ATMA1 |
| Mounting Style | SMD/SMT |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Height | 4.4 mm |
| Length | 10 mm |
| Width | 9.25 mm |
| Unit Weight | 0.139332 oz |
| Package / Case | D2PAK-3 (TO-263-3) |
| Configuration | Single |
| Tradename | OptiMOS |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 80 V |
| Id - Continuous Drain Current | 120 A |
| Rds On - Drain-Source Resistance | 1.5 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2.2 V |
| Qg - Gate Charge | 223 nC |
| Pd - Power Dissipation | 375 W |
| Channel Mode | Enhancement |
| Fall Time | 37 ns |
| Rise Time | 36 ns |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 102 ns |
| Typical Turn-On Delay Time | 40 ns |
| REACH - SVHC | Details |
| Forward Transconductance - Min | 114 S |
概要
Description
IPB017N08N5 is a specific model of an IGBT (Insulated Gate Bipolar Transistor) produced by Infineon Technologies. It features a voltage rating of 800V and a current rating of 17A, making it suitable for high-efficiency applications such as motor drives, power converters, and renewable energy systems. The device combines the advantages of both MOSFETs (fast switching) and BJTs (high current capacity), providing excellent performance in terms of power loss and thermal management.
The "N" in the part number indicates that it is designed with a non-punch-through structure, enhancing its robustness and reliability under high voltage conditions. The IPB017N08N5 is often used in industrial applications, including inverters, and various energy management systems due to its high switching speeds and ruggedness. Its compact package design aids in space-saving PCB layouts, further enhancing its applicability in modern electronic designs.
Overall, the IPB017N08N5 is a versatile component well-suited for a range of demanding power electronics applications.
The "N" in the part number indicates that it is designed with a non-punch-through structure, enhancing its robustness and reliability under high voltage conditions. The IPB017N08N5 is often used in industrial applications, including inverters, and various energy management systems due to its high switching speeds and ruggedness. Its compact package design aids in space-saving PCB layouts, further enhancing its applicability in modern electronic designs.
Overall, the IPB017N08N5 is a versatile component well-suited for a range of demanding power electronics applications.
Features
The IPB017N08N5 is a power MOSFET from Infineon's CoolMOS™ series, designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 800V, making it suitable for high-voltage applications.
2. On-Resistance (R_DS(on)): Low on-resistance, typically around 0.17 ohms, ensuring minimal conduction losses.
3. High-Speed Switching: Optimized for fast switching, which contributes to improved system efficiency and reduced electromagnetic interference (EMI).
4. Thermal Performance: Enhanced thermal management capabilities, allowing for better performance in high-temperature environments.
5. Package Type: Available in a TO-220 package, facilitating easy mounting and heat dissipation.
6. Applications: Ideal for use in power supplies, motor drives, and other power conversion systems.
These features make the IPB017N08N5 an excellent choice for designers seeking reliability and efficiency in power electronics.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 800V, making it suitable for high-voltage applications.
2. On-Resistance (R_DS(on)): Low on-resistance, typically around 0.17 ohms, ensuring minimal conduction losses.
3. High-Speed Switching: Optimized for fast switching, which contributes to improved system efficiency and reduced electromagnetic interference (EMI).
4. Thermal Performance: Enhanced thermal management capabilities, allowing for better performance in high-temperature environments.
5. Package Type: Available in a TO-220 package, facilitating easy mounting and heat dissipation.
6. Applications: Ideal for use in power supplies, motor drives, and other power conversion systems.
These features make the IPB017N08N5 an excellent choice for designers seeking reliability and efficiency in power electronics.
Package
The IPB017N08N5 is typically available in a TO-220 package type. This package design features a metal tab for heat dissipation, allowing for efficient thermal management in power applications.
Pinout
The IPB017N08N5 is an N-channel MOSFET from Infineon Technologies, designed for power applications. It features a pin count of 3. The pins are typically configured as follows:
1. Gate (G): This pin controls the MOSFET's switching operation. A voltage applied here allows the device to conduct.
2. Drain (D): The drain pin is where the load connects; current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to ground or the negative side of the circuit, allowing current to flow from the drain through the MOSFET to the source.
The IPB017N08N5 is known for its low on-resistance and high efficiency, making it suitable for applications such as power supplies, converters, and motor drivers.
1. Gate (G): This pin controls the MOSFET's switching operation. A voltage applied here allows the device to conduct.
2. Drain (D): The drain pin is where the load connects; current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to ground or the negative side of the circuit, allowing current to flow from the drain through the MOSFET to the source.
The IPB017N08N5 is known for its low on-resistance and high efficiency, making it suitable for applications such as power supplies, converters, and motor drivers.
Manufacturer
The IPB017N08N5 is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in providing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensor systems, and automotive electronics. The company serves various industries, such as automotive, industrial, and consumer electronics, focusing on energy efficiency, mobility, and security. Infineon is known for its innovation in power management and control technologies, contributing to advancements in energy-efficient solutions and smart systems.
Application
The IPB017N08N5 is a N-channel MOSFET primarily used in power management applications. Key areas include automotive systems, DC-DC converters, switch-mode power supplies, and motor control. It is suitable for high-efficiency designs in renewable energy systems, electric vehicles, and industrial applications due to its low on-resistance and high switching speed.
Equivalent
The IPB017N08N5 is a N-channel MOSFET with a maximum drain-source voltage of 80V and a continuous drain current of 17A. Equivalent products include the STP17NM60, IRF3205, and BSS138. Always verify specifications like RDS(on), gate threshold voltage, and package type before replacement.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
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TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
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