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IPB010N06N
MOSFETs N-Ch 60V 180A D2PAK-6
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- Mfr。パート #IPB010N06N
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- データシート IPB010N06N DataSheet
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| Packaging | MouseReel |
| Standard Pack Qty | 1000 |
概要
Description
IPB010N06N is a specific model of an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Infineon Technologies. This device is designed for high-efficiency applications, typically used in power management and switching circuits. The 'N' signifies that it is an N-channel MOSFET, which is known for its high-speed switching capabilities and lower on-resistance compared to P-channel types.
Key features of the IPB010N06N include a low gate threshold voltage, high current handling capacity, and robust thermal performance, making it suitable for applications in automotive, industrial, and consumer electronics. It can efficiently control power in converters, motor drives, and other configurations requiring quick switching and minimal energy loss. Its compact package design contributes to space-saving in circuit layouts. Overall, the IPB010N06N is a versatile component for enhancing efficiency and performance in various electronic applications.
Key features of the IPB010N06N include a low gate threshold voltage, high current handling capacity, and robust thermal performance, making it suitable for applications in automotive, industrial, and consumer electronics. It can efficiently control power in converters, motor drives, and other configurations requiring quick switching and minimal energy loss. Its compact package design contributes to space-saving in circuit layouts. Overall, the IPB010N06N is a versatile component for enhancing efficiency and performance in various electronic applications.
Features
The IPB010N06N is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (V_ds) of 60V.
2. Current Rating: Capable of handling a continuous drain current (I_d) of up to 10A.
3. On-Resistance: Low on-resistance (R_ds(on)) ensures minimal power loss during operation, often around 10 mΩ, which enhances efficiency.
4. Gate Threshold Voltage: It has a gate threshold voltage (V_gs(th)) ranging from 1V to 3V, allowing for easy driving from low-voltage circuits.
5. Fast Switching Speed: Offers high-speed switching capabilities, making it suitable for applications like power management and DC-DC converters.
6. Thermal Performance: Designed with a TO-220 package or similar, providing good heat dissipation.
Overall, the IPB010N06N is ideal for power switching applications, automotive electronics, and other high-efficiency power management systems.
1. Voltage Rating: It typically has a maximum drain-source voltage (V_ds) of 60V.
2. Current Rating: Capable of handling a continuous drain current (I_d) of up to 10A.
3. On-Resistance: Low on-resistance (R_ds(on)) ensures minimal power loss during operation, often around 10 mΩ, which enhances efficiency.
4. Gate Threshold Voltage: It has a gate threshold voltage (V_gs(th)) ranging from 1V to 3V, allowing for easy driving from low-voltage circuits.
5. Fast Switching Speed: Offers high-speed switching capabilities, making it suitable for applications like power management and DC-DC converters.
6. Thermal Performance: Designed with a TO-220 package or similar, providing good heat dissipation.
Overall, the IPB010N06N is ideal for power switching applications, automotive electronics, and other high-efficiency power management systems.
Package
The IPB010N06N is typically packaged in a TO-220 format. This package type is designed for efficient heat dissipation and is commonly used for power applications, providing robust thermal performance and easy mounting options.
Pinout
The IPB010N06N is a N-channel MOSFET with a pin count of 3. Its typical pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to this pin turns the MOSFET on or off, allowing current to flow between the drain and source.
2. Drain (D): This pin is where the main current flows out of the MOSFET. When the device is turned on, it connects to the source pin to allow current to pass through.
3. Source (S): This pin is the terminal through which current enters the MOSFET. In a typical application, it is connected to ground or the lower potential in the circuit.
The IPB010N06N is known for its low on-resistance and high-speed switching capabilities, making it suitable for power management applications in various electronic devices.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to this pin turns the MOSFET on or off, allowing current to flow between the drain and source.
2. Drain (D): This pin is where the main current flows out of the MOSFET. When the device is turned on, it connects to the source pin to allow current to pass through.
3. Source (S): This pin is the terminal through which current enters the MOSFET. In a typical application, it is connected to ground or the lower potential in the circuit.
The IPB010N06N is known for its low on-resistance and high-speed switching capabilities, making it suitable for power management applications in various electronic devices.
Manufacturer
The IPB010N06N is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer. Founded in 1999 and headquartered in Neubiberg, Germany, Infineon specializes in a wide range of semiconductor solutions, including power management, automotive electronics, and security technologies. The company is known for its innovative products that enhance energy efficiency and sustainability across various applications, such as industrial, automotive, and consumer electronics. Infineon is recognized for its commitment to research and development, positioning itself as a key player in the semiconductor industry.
Application
The IPB010N06N is an N-channel MOSFET primarily used in applications such as power management, DC-DC converters, motor drives, and various switching applications. Its low on-resistance and high efficiency make it suitable for use in automotive, industrial, and consumer electronics, particularly in power supply circuits and energy-efficient devices.
Equivalent
The IPB010N06N is an N-channel MOSFET. Equivalent products include the IRF3205, STP75NF06L, and AON7410. These alternatives share similar voltage and current ratings, but it's essential to check specific datasheets for detailed parameters like Rds(on) and gate threshold voltage to ensure compatibility in your application.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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