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IPA80R460CE
MOSFETs CONSUMER
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- Mfr。パート #IPA80R460CE
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- データシート IPA80R460CE DataSheet
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概要
Description
The IPA80R460CE is a high-performance N-channel MOSFET designed for various power applications, such as converters, amplifiers, and motor controls. With a maximum drain-source voltage of 80 volts and a continuous drain current rating of 460 amperes, it is suited for high-efficiency power management solutions. The device features low on-resistance, resulting in reduced power losses during operation, which enhances thermal performance and overall efficiency.
Designed for automotive and industrial applications, the IPA80R460CE supports fast switching speeds, making it ideal for use in high-frequency circuits. Its robust construction ensures reliability under challenging conditions, including high temperatures and heavy loads.
The device is typically housed in a TO-220 package, providing good thermal dissipation. Overall, the IPA80R460CE is an excellent choice for engineers seeking a reliable MOSFET for demanding power applications.
Designed for automotive and industrial applications, the IPA80R460CE supports fast switching speeds, making it ideal for use in high-frequency circuits. Its robust construction ensures reliability under challenging conditions, including high temperatures and heavy loads.
The device is typically housed in a TO-220 package, providing good thermal dissipation. Overall, the IPA80R460CE is an excellent choice for engineers seeking a reliable MOSFET for demanding power applications.
Features
The IPA80R460CE is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed for various industrial applications. Key features include:
1. Voltage Rating: It typically has a maximum collector-emitter voltage of 800V, making it suitable for medium-voltage applications.
2. Current Rating: It supports high current levels, often around 460A, allowing for robust performance in demanding environments.
3. Thermal Performance: The module is designed for excellent thermal management, ensuring reliable operation under heavy loads.
4. Low Switching Losses: The device features optimized switching characteristics for efficient operation in inverter and converter circuits.
5. Rugged Design: Built for durability, it withstands harsh conditions, making it suitable for industrial environments.
6. Integration: Compatible with various control systems and configurations, facilitating easy integration into existing setups.
These features make the IPA80R460CE ideal for applications like motor drives, renewable energy systems, and industrial power supplies.
1. Voltage Rating: It typically has a maximum collector-emitter voltage of 800V, making it suitable for medium-voltage applications.
2. Current Rating: It supports high current levels, often around 460A, allowing for robust performance in demanding environments.
3. Thermal Performance: The module is designed for excellent thermal management, ensuring reliable operation under heavy loads.
4. Low Switching Losses: The device features optimized switching characteristics for efficient operation in inverter and converter circuits.
5. Rugged Design: Built for durability, it withstands harsh conditions, making it suitable for industrial environments.
6. Integration: Compatible with various control systems and configurations, facilitating easy integration into existing setups.
These features make the IPA80R460CE ideal for applications like motor drives, renewable energy systems, and industrial power supplies.
Package
The IPA80R460CE is typically packaged in a TO-220 package type. This package is designed for easy mounting on heatsinks and provides efficient thermal management for the power semiconductor.
Pinout
The IPA80R460CE is an N-channel MOSFET from Infineon, primarily used in power applications. It features a TO-220 package with a pin count of three.
The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET's operation. A voltage applied to this pin turns the device on or off.
2. Drain (D): The drain pin connects to the load and carries the current when the MOSFET is in the on state.
3. Source (S): The source pin is connected to ground or the negative side of the power supply, completing the circuit for current flow.
The IPA80R460CE is designed for high-efficiency applications and can handle high voltage and current levels, making it suitable for use in power converters, inverters, and automotive applications.
The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET's operation. A voltage applied to this pin turns the device on or off.
2. Drain (D): The drain pin connects to the load and carries the current when the MOSFET is in the on state.
3. Source (S): The source pin is connected to ground or the negative side of the power supply, completing the circuit for current flow.
The IPA80R460CE is designed for high-efficiency applications and can handle high voltage and current levels, making it suitable for use in power converters, inverters, and automotive applications.
Manufacturer
The IPA80R460CE is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer headquartered in Germany. Infineon specializes in providing semiconductor and system solutions that enable efficient energy management, automotive electronics, industrial power control, and secure connected devices. The company focuses on innovation in areas such as power semiconductors, microcontrollers, and sensors, catering to various industries including automotive, industrial, and consumer electronics.
Application
The IPA80R460CE is an N-channel MOSFET commonly used in power management applications, such as DC-DC converters, motor control, and switch-mode power supplies. Its high efficiency and low on-resistance make it suitable for applications in renewable energy systems, electric vehicles, and industrial automation. Additionally, it can be utilized in consumer electronics for efficient power switching and thermal management.
Equivalent
The IPA80R460CE is an N-channel MOSFET from Infineon designed for high-power applications. Equivalent products include the STP80NF460 (STMicroelectronics), IRF460 (Infineon/International Rectifier), and FQA80N60 (Fairchild Semiconductor). Ensure to check specific parameters like RDS(on), VDS, and maximum current ratings for compatibility in your application.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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