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IPA60R199CP
MOSFETs N-Ch 600V 16A TO220FP-3 CoolMOS CP
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- Mfr。パート #IPA60R199CP
- パッケージ
- データシート IPA60R199CP DataSheet
- 在庫中18907
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仕様
| Packaging | Tube |
| Standard Pack Qty | 500 |
概要
Description
The IPA60R199CP is a high-performance N-channel MOSFET designed for various applications, including power management, switching, and amplifying signals in electronic circuits. Key features include a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of up to 199A, making it suitable for high-power applications. The device exhibits low on-resistance (R_DS(on)), which minimizes power loss and improves efficiency.
This MOSFET is typically housed in a robust TO-220 package, facilitating effective heat dissipation. It is widely used in automotive, industrial, and consumer electronics. The IPA60R199CP also supports fast switching speeds, enhancing performance in pulse applications.
Its reliability and thermal stability make it a preferred choice for designs requiring efficient power management and high switching capabilities. Overall, the IPA60R199CP combines versatility, efficiency, and durability, making it an essential component in modern electronic systems.
This MOSFET is typically housed in a robust TO-220 package, facilitating effective heat dissipation. It is widely used in automotive, industrial, and consumer electronics. The IPA60R199CP also supports fast switching speeds, enhancing performance in pulse applications.
Its reliability and thermal stability make it a preferred choice for designs requiring efficient power management and high switching capabilities. Overall, the IPA60R199CP combines versatility, efficiency, and durability, making it an essential component in modern electronic systems.
Features
The IPA60R199CP is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: Capable of handling up to 60V, making it suitable for automotive and industrial applications.
2. Current Rating: Supports continuous drain currents up to 199A, allowing for efficient power delivery.
3. Low On-Resistance: Exhibits a low R_DS(on), which reduces power losses and improves thermal efficiency.
4. Fast Switching Speed: Designed for rapid switching, enhancing performance in high-frequency applications.
5. Thermal Performance: Features a robust thermal design, ensuring reliable operation under high temperatures.
6. Package Type: Typically available in a TO-220 or similar package for improved heat dissipation.
These characteristics make the IPA60R199CP ideal for use in power supplies, motor drives, and other applications requiring efficient and reliable power management.
1. Voltage Rating: Capable of handling up to 60V, making it suitable for automotive and industrial applications.
2. Current Rating: Supports continuous drain currents up to 199A, allowing for efficient power delivery.
3. Low On-Resistance: Exhibits a low R_DS(on), which reduces power losses and improves thermal efficiency.
4. Fast Switching Speed: Designed for rapid switching, enhancing performance in high-frequency applications.
5. Thermal Performance: Features a robust thermal design, ensuring reliable operation under high temperatures.
6. Package Type: Typically available in a TO-220 or similar package for improved heat dissipation.
These characteristics make the IPA60R199CP ideal for use in power supplies, motor drives, and other applications requiring efficient and reliable power management.
Package
The IPA60R199CP is packaged in a TO-220 format, which is a standard semiconductor package providing good thermal performance and is suitable for high-power applications.
Pinout
The IPA60R199CP is an n-channel MOSFET from Infineon Technologies, featuring a total of 6 pins. Its primary functions include:
1. Gate (G) - Controls the MOSFET operation; applying a voltage here turns the device on or off.
2. Drain (D) - The terminal through which the current flows out of the device when it is turned on.
3. Source (S) - The terminal through which current enters the device.
The pin configuration is as follows:
1. Pin 1: Gate
2. Pin 2: Drain
3. Pin 3: Source
4. Pin 4: Source
5. Pin 5: Drain
6. Pin 6: Gate
The IPA60R199CP is designed for high-efficiency applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 199A. Its low R_DS(on) contributes to reduced conduction losses, making it suitable for power conversion applications.
1. Gate (G) - Controls the MOSFET operation; applying a voltage here turns the device on or off.
2. Drain (D) - The terminal through which the current flows out of the device when it is turned on.
3. Source (S) - The terminal through which current enters the device.
The pin configuration is as follows:
1. Pin 1: Gate
2. Pin 2: Drain
3. Pin 3: Source
4. Pin 4: Source
5. Pin 5: Drain
6. Pin 6: Gate
The IPA60R199CP is designed for high-efficiency applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 199A. Its low R_DS(on) contributes to reduced conduction losses, making it suitable for power conversion applications.
Manufacturer
The IPA60R199CP is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in producing a wide range of semiconductor solutions for various applications, including automotive, industrial power control, security technologies, and the Internet of Things (IoT). They are particularly known for their expertise in power management and energy efficiency, focusing on developing innovative technologies that enhance performance and sustainability in electronic devices. Infineon serves a global market and is recognized for its commitment to research and development in the semiconductor sector.
Application
The IPA60R199CP is an N-channel MOSFET primarily used in power management applications. Its key application areas include:
1. Switching Power Supplies: For efficient power conversion.
2. DC-DC Converters: In photovoltaic systems and battery management.
3. Motor Drives: For driving electric motors in various devices.
4. High-Voltage Applications: Such as industrial equipment and electric vehicles.
5. LED Lighting: In dimming and control circuits.
Its high voltage and current handling capabilities make it suitable for these applications.
1. Switching Power Supplies: For efficient power conversion.
2. DC-DC Converters: In photovoltaic systems and battery management.
3. Motor Drives: For driving electric motors in various devices.
4. High-Voltage Applications: Such as industrial equipment and electric vehicles.
5. LED Lighting: In dimming and control circuits.
Its high voltage and current handling capabilities make it suitable for these applications.
Equivalent
The IPA60R199CP is a 600V N-channel MOSFET from Infineon. Equivalent products include:
1. STP60NF199 (STMicroelectronics)
2. FQP60N199 (Fairchild/ON Semiconductor)
3. IRFPG60 (Infineon/IR)
4. BSS139 (Nexperia)
Always verify specifications such as V_DS, I_D, R_DS(on), and package to ensure compatibility for your application.
1. STP60NF199 (STMicroelectronics)
2. FQP60N199 (Fairchild/ON Semiconductor)
3. IRFPG60 (Infineon/IR)
4. BSS139 (Nexperia)
Always verify specifications such as V_DS, I_D, R_DS(on), and package to ensure compatibility for your application.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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