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IMW120R030M1H
SiC MOSFETs SIC DISCRETE
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- Mfr。パート #IMW120R030M1H
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- データシート IMW120R030M1H DataSheet
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仕様
| Packaging | Tube |
概要
Description
The IMW120R030M1H is a high-performance MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications, particularly in industrial and automotive sectors. It features a low on-resistance and high thermal stability, making it suitable for efficient power management and switching applications.
Key specifications include a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of 120A, enabling it to handle substantial power loads. Its compact package design allows for easy integration into circuits, while its fast switching capabilities enhance overall system performance.
The IMW120R030M1H is often utilized in applications such as DC-DC converters, motor drives, and power inverters, where efficiency and reliability are critical. Its robust design and high current handling make it ideal for demanding environments.
In summary, the IMW120R030M1H is a versatile and efficient MOSFET that supports a wide range of power electronic applications, ensuring optimal performance and energy savings.
Key specifications include a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of 120A, enabling it to handle substantial power loads. Its compact package design allows for easy integration into circuits, while its fast switching capabilities enhance overall system performance.
The IMW120R030M1H is often utilized in applications such as DC-DC converters, motor drives, and power inverters, where efficiency and reliability are critical. Its robust design and high current handling make it ideal for demanding environments.
In summary, the IMW120R030M1H is a versatile and efficient MOSFET that supports a wide range of power electronic applications, ensuring optimal performance and energy savings.
Features
The IMW120R030M1H is an N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: The device typically supports a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Handling: It has a continuous drain current rating (I_D) of 120A, allowing it to handle substantial loads.
3. Low R_DS(on): The on-resistance is low (around 3 mΩ), which contributes to reduced power losses and enhanced thermal efficiency.
4. Fast Switching Speed: Designed for efficient switching capabilities, enhancing performance in high-frequency applications.
5. Thermal Performance: The package typically includes a robust thermal design to manage heat dissipation effectively.
6. Package Type: Usually available in TO-220 or similar packages for easy mounting and heat management.
These features make the IMW120R030M1H suitable for applications in power management, motor control, and high-efficiency converters.
1. Voltage Rating: The device typically supports a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Handling: It has a continuous drain current rating (I_D) of 120A, allowing it to handle substantial loads.
3. Low R_DS(on): The on-resistance is low (around 3 mΩ), which contributes to reduced power losses and enhanced thermal efficiency.
4. Fast Switching Speed: Designed for efficient switching capabilities, enhancing performance in high-frequency applications.
5. Thermal Performance: The package typically includes a robust thermal design to manage heat dissipation effectively.
6. Package Type: Usually available in TO-220 or similar packages for easy mounting and heat management.
These features make the IMW120R030M1H suitable for applications in power management, motor control, and high-efficiency converters.
Package
The IMW120R030M1H is packaged in a TO-247 format, which is a robust, high-power package commonly used for discrete devices in power electronics applications.
Pinout
The IMW120R030M1H is an N-channel MOSFET designed for high-efficiency applications. It features a total of 8 pins. The pin configuration typically includes:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - Connected to ground or the negative side of the power supply.
The specific function of each pin is as follows:
- Gate (G): Receives the control voltage to turn the MOSFET on (allowing current to flow from drain to source) or off (blocking current).
- Drain (D): The pin through which the load current exits the MOSFET.
- Source (S): The return path for the current to complete the circuit.
For detailed applications, refer to the manufacturer's datasheet for electrical characteristics and typical usage scenarios. The IMW120R030M1H is commonly used in power management and conversion systems.
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - Connected to ground or the negative side of the power supply.
The specific function of each pin is as follows:
- Gate (G): Receives the control voltage to turn the MOSFET on (allowing current to flow from drain to source) or off (blocking current).
- Drain (D): The pin through which the load current exits the MOSFET.
- Source (S): The return path for the current to complete the circuit.
For detailed applications, refer to the manufacturer's datasheet for electrical characteristics and typical usage scenarios. The IMW120R030M1H is commonly used in power management and conversion systems.
Manufacturer
The IMW120R030M1H is manufactured by Infineon Technologies AG. Infineon is a leading global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in developing and producing a wide range of semiconductor and system solutions, focusing on areas such as automotive, industrial power control, and security technologies. Infineon is known for its innovative products that cater to various sectors, including automotive electronics, renewable energy, and the Internet of Things (IoT). Their technologies are integral to enhancing energy efficiency, connectivity, and safety in modern electronic devices.
Application
The IMW120R030M1H is an N-channel MOSFET commonly used in power electronics applications such as DC-DC converters, power supplies, motor control, and energy management systems. Its high efficiency and low on-resistance make it suitable for electric vehicles, renewable energy systems, and industrial automation, where high-performance switching is essential.
Equivalent
The IMW120R030M1H is a MOSFET from Infineon. Equivalent products may include the following:
1. IRF3205 - from Infineon
2. FQP50N06L - from ON Semiconductor
3. STP55NF06L - from STMicroelectronics
4. AOD6N60 - from Alpha & Omega Semiconductor
Always verify electrical specifications and package compatibility before substitution.
1. IRF3205 - from Infineon
2. FQP50N06L - from ON Semiconductor
3. STP55NF06L - from STMicroelectronics
4. AOD6N60 - from Alpha & Omega Semiconductor
Always verify electrical specifications and package compatibility before substitution.
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