IKW40T120

画像は参照用のみです。

IKW40T120

  • メーカー
  • Mfr。パート #IKW40T120
  • パッケージ
  • データシート
  • 在庫中8846

100% オリジナル &新しい

出荷の準備ができている24時間

365日の保証

RFQおよびもっと割引を得る

仕様

Packaging Tube
Brand Infineon Technologies
Product Type IGBT Transistors
Subcategory IGBTs
Maximum Gate Emitter Voltage - 20 V, 20 V
Series Trenchstop IGBT3
Package / Case TO-247-3
Mounting Style Through Hole
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C
Unit Weight 1.340411 oz
Factory Pack Quantity:Factory Pack Quantity 240
Part # Aliases IKW4T12XK SP000013940 IKW40T120FKSA1
Technology Si
Configuration Single
Collector- Emitter Voltage VCEO Max 1.2 kV
Collector-Emitter Saturation Voltage 1.7 V
Continuous Collector Current at 25 C 75 A
Pd - Power Dissipation 270 W
Gate-Emitter Leakage Current 600 nA
Tradename TRENCHSTOP
Height 20.95 mm
Length 15.9 mm
Width 5.3 mm
Shipping Restrictions Mouser does not presently sell this product in your region.

概要

Description

The IKW40T120 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed for applications requiring efficient power switching. It features a voltage rating of 1200V and a current rating of 40A, making it suitable for various industrial and automotive applications, such as inverters, converters, and motor drives.
This module is known for its low switching losses and high-speed operation, which improves overall efficiency in power conversion systems. It typically utilizes advanced packaging technology to enhance thermal management and reliability, ensuring stable performance under demanding conditions.
The IKW40T120 is also designed for easy integration into power electronic circuits, aiding in the development of compact and efficient systems. Its robustness and versatility make it an ideal choice for engineers looking to optimize energy usage and reduce costs in their power electronics designs.

Features

The IKW40T120 is an IGBT (Insulated Gate Bipolar Transistor) designed for high-efficiency power applications. Key features include:
1. Voltage Rating: Capable of handling a maximum collector-emitter voltage of 1200 V, making it suitable for high-voltage applications.
2. Current Rating: Supports continuous collector current up to 40 A, allowing for significant power handling.
3. Low Switching Losses: Optimized for reduced switching losses, enhancing overall system efficiency, especially in high-frequency applications.
4. Fast Switching Speed: Facilitates quick turn-on and turn-off times, improving performance in switching power supplies, inverters, and motor drives.
5. Thermal Performance: Designed for better thermal stability and reliability, with a junction temperature range of up to 150°C.
6. Robust Package: Typically available in a TO-247 package, allowing for effective heat dissipation and ease of integration into circuits.
These features make the IKW40T120 ideal for applications in renewable energy systems, industrial drives, and automotive power electronics.

Package

The IKW40T120 is typically housed in a TO-247 package type. This package features a robust design suitable for high-power applications, providing effective thermal management and ease of mounting.

Pinout

The IKW40T120 is an IGBT (Insulated Gate Bipolar Transistor) module with a pin count of 6. It is commonly used in power applications such as motor drives, renewable energy systems, and industrial controls.
The pin functions are as follows:
1. Gate: Controls the switching of the IGBT.
2. Collector: Connects to the high-voltage side of the load.
3. Emitter: Connects to the low-voltage side of the load.
4. Thermal Pad: Used for heat dissipation.
5. Additional Collector/Electrode: Provides an alternative connection for the collector.
6. Additional Emitter/Electrode: Provides an alternative connection for the emitter.
This IGBT is rated for a maximum voltage of 1200V and a current rating of 40A, making it suitable for high-power applications.

Manufacturer

The IKW40T120 is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in the design, development, and production of a wide range of semiconductor and system solutions, focusing primarily on automotive, industrial power control, security, and IoT applications. The company is known for its expertise in power semiconductors, including MOSFETs and IGBTs, which are essential for efficient energy management in various electronic devices and systems. Infineon aims to drive innovation in energy efficiency and connectivity, making it a key player in the global semiconductor industry.

Application

The IKW40T120 is an IGBT (Insulated Gate Bipolar Transistor) primarily used in high-power applications such as:
1. Industrial Drives - Motor control for various machinery.
2. Renewable Energy - Inverters for solar and wind energy systems.
3. Power Supplies - High-efficiency switching power supplies.
4. Welding Equipment - Inverter-based welding machines.
5. HVAC Systems - Control circuits for heating, ventilation, and air conditioning.
Its high voltage and current ratings make it suitable for demanding applications in power electronics.

Equivalent

The IKW40T120 is an IGBT (Insulated Gate Bipolar Transistor) module primarily used in power electronics. Equivalent products include the Infineon IGBT module FZ1200R17KF2, the Mitsubishi MG120Q2YS40, and the ON Semiconductor NGTB40N120. Always verify specifications such as voltage rating, current rating, and package type when considering alternatives.

出荷

出荷方法私たち

DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。


出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。

支払い

Payment Methods

支払い期間は100%前払いです。

現在、下記の支払い方法のみを受け入れています。:

1. ペイパル

2. クレジット・デビットカード

3. ワイヤー 転送