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IKQ75N120CS6
IGBTs INDUSTRY 14
- メーカー
- Mfr。パート #IKQ75N120CS6
- パッケージ
- データシート IKQ75N120CS6 DataSheet
- 在庫中28077
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仕様
| Packaging | Tube |
概要
Description
The IKQ75N120CS6 is a high-performance N-channel MOSFET designed for power electronic applications. It features a maximum drain-source voltage (VDS) of 1200V and a continuous drain current (ID) of 75A, making it suitable for high-voltage and high-current applications. With a low gate threshold voltage, it ensures efficient switching performance, reducing losses during operation. Its low on-resistance (RDS(on)) helps minimize heat generation, enhancing reliability and efficiency in power conversion systems like inverters, converters, and motor drives. The device is typically housed in a TO-220 package, allowing for effective heat dissipation and easy mounting on heat sinks. Its robust construction and thermal stability make it an ideal choice for applications in industrial, automotive, and renewable energy sectors. Overall, the IKQ75N120CS6 combines high voltage handling with efficient performance, catering to the demands of modern power electronics.
Features
The IKQ75N120CS6 is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 120V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at 75A, allowing it to handle substantial loads.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)), which minimizes conduction losses, enhancing efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is designed for compatibility with standard drive levels.
5. Fast Switching Speed: The device features rapid switching capabilities, which improves performance in high-frequency applications.
6. Thermal Performance: It has a robust thermal resistance, allowing for effective heat dissipation.
7. Package Type: Typically available in TO-220 or similar packages for easy mounting and thermal management.
These features make the IKQ75N120CS6 ideal for use in power supplies, motor drives, and industrial applications.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 120V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at 75A, allowing it to handle substantial loads.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)), which minimizes conduction losses, enhancing efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is designed for compatibility with standard drive levels.
5. Fast Switching Speed: The device features rapid switching capabilities, which improves performance in high-frequency applications.
6. Thermal Performance: It has a robust thermal resistance, allowing for effective heat dissipation.
7. Package Type: Typically available in TO-220 or similar packages for easy mounting and thermal management.
These features make the IKQ75N120CS6 ideal for use in power supplies, motor drives, and industrial applications.
Package
The IKQ75N120CS6 is packaged in a TO-247 casing. This package type is designed for high-power applications, providing efficient thermal management and ease of mounting on heatsinks.
Pinout
The IKQ75N120CS6 is an N-channel MOSFET designed for high voltage applications. It features a total of 6 pins. The pin configuration is as follows:
1. Gate (G) - This pin controls the MOSFET, allowing it to switch on or off.
2. Drain (D) - The output pin where the load is connected, allowing current to flow from drain to source when the MOSFET is on.
3. Source (S) - The reference pin for the voltage across the MOSFET and the return path for current.
Typically, the arrangement is Gate, Drain, and Source in a standard TO-247 package, but you should verify the specific datasheet for exact pin assignments and functions. The IKQ75N120CS6 is rated for a maximum drain-source voltage of 1200V and a continuous drain current of 75A, making it suitable for applications like power supplies, inverters, and motor drives.
1. Gate (G) - This pin controls the MOSFET, allowing it to switch on or off.
2. Drain (D) - The output pin where the load is connected, allowing current to flow from drain to source when the MOSFET is on.
3. Source (S) - The reference pin for the voltage across the MOSFET and the return path for current.
Typically, the arrangement is Gate, Drain, and Source in a standard TO-247 package, but you should verify the specific datasheet for exact pin assignments and functions. The IKQ75N120CS6 is rated for a maximum drain-source voltage of 1200V and a continuous drain current of 75A, making it suitable for applications like power supplies, inverters, and motor drives.
Manufacturer
The IKQ75N120CS6 is manufactured by Infineon Technologies, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in developing semiconductor solutions that enhance energy efficiency, mobility, and security in various applications. They focus on sectors such as automotive, industrial power control, and the Internet of Things (IoT). The company is known for its innovative technologies in power management and high-performance semiconductor components, making it a key player in the electronics industry.
Application
The IKQ75N120CS6 is a high-power IGBT (Insulated Gate Bipolar Transistor) used in various applications including industrial motor drives, renewable energy systems (such as solar inverters), power supplies, and induction heating systems. Its high voltage and current ratings make it suitable for applications requiring efficient power conversion and control in automotive, railway, and heavy machinery sectors.
Equivalent
The IKQ75N120CS6 is a 1200V, 75A IGBT. Equivalent products include:
1. FGA75N120 - Fairchild
2. IRG4PH50KD - Infineon
3. SCT75N120 - STMicroelectronics
4. HGTG75N120 - ON Semiconductor
Always verify specific electrical characteristics and ratings for compatibility in your application.
1. FGA75N120 - Fairchild
2. IRG4PH50KD - Infineon
3. SCT75N120 - STMicroelectronics
4. HGTG75N120 - ON Semiconductor
Always verify specific electrical characteristics and ratings for compatibility in your application.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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