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IKP15N60T

Name: IKP15N60T
Rating: 4.7 (12 reviews)

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Mfr。パート #IKP15N60T
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仕様

Packaging	Tube
Brand	Infineon Technologies
Product Type	IGBT Transistors
Subcategory	IGBTs
Maximum Gate Emitter Voltage	- 20 V, 20 V
Series	TRENCHSTOP IGBT
Package / Case	TO-220-3
Mounting Style	Through Hole
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 175 C
Unit Weight	0.211644 oz
Factory Pack Quantity:Factory Pack Quantity	500
Part # Aliases	SP000683064 IKP15N6TXK IKP15N60TXKSA1
Technology	Si
Configuration	Single
Collector- Emitter Voltage VCEO Max	600 V
Collector-Emitter Saturation Voltage	1.5 V
Continuous Collector Current at 25 C	26 A
Pd - Power Dissipation	130 W
Gate-Emitter Leakage Current	100 nA
Tradename	TRENCHSTOP
Height	15.95 mm
Length	10.36 mm
Width	4.57 mm

概要

Description

The IKP15N60T is an N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. It has a maximum drain-source voltage (Vds) of 600V and a continuous drain current (Id) of 15A, making it suitable for use in power electronics such as switch-mode power supplies, motor drives, and inverters.
Key features include a low on-state resistance (Rds(on)), which enhances efficiency by reducing power losses during operation. The device also offers fast switching speeds, enabling high-frequency applications. Additionally, the IKP15N60T is packaged in a TO-220 format, facilitating effective heat dissipation and simplifying mounting on heat sinks.
Its reliability and performance characteristics make it a common choice for designers looking to optimize power conversion efficiency and thermal management in various electronic circuits. Overall, it is a versatile component for managing high power and voltage in various industrial and consumer applications.

Features

The IKP15N60T is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (VDS) of 600V.
2. Current Rating: Continuous drain current (ID) of 15A at a case temperature of 25°C.
3. RDS(on): Low on-resistance, typically around 0.25 ohms, which enhances efficiency by minimizing conduction losses.
4. Gate Threshold Voltage: VGS(th) is between 2-4V, allowing for easy drive with standard voltage levels.
5. Fast Switching: Capable of high-speed switching, making it suitable for various applications, including power supplies and motor drives.
6. Package Type: Usually available in a TO-220 package, providing effective thermal management for heat dissipation.
7. Robust Construction: Designed for high reliability in demanding environments.
These features make the IKP15N60T suitable for power electronics, including converters, inverters, and other high-voltage applications.

Package

The IKP15N60T is typically available in a TO-220 package type. This package is known for its good thermal performance and ease of heat dissipation, making it suitable for high-power applications.

Pinout

The IKP15N60T is a high-voltage N-channel MOSFET with a pin count of 3. Its pin functions are as follows:
1. Gate (G): This pin controls the MOSFET's operation. A voltage applied to the gate enhances or depletes the channel, allowing or stopping current flow between the drain and source.

2. Drain (D): This pin is the output terminal where the load is connected. It carries the current from the drain to the source when the MOSFET is in the "on" state.
3. Source (S): This pin is the terminal through which the current exits the MOSFET. It is usually connected to the ground or a lower potential in the circuit.
The IKP15N60T is designed for applications requiring high voltage and current handling, such as power supplies and motor control.

Manufacturer

The IKP15N60T is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs and produces a wide range of semiconductor solutions, including power management devices, microcontrollers, sensors, and integrated circuits. The company serves various sectors, including automotive, industrial, consumer electronics, and communications. Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics is known for its innovation in technologies that drive the Internet of Things (IoT), smart manufacturing, and energy efficiency. The IKP15N60T is a high-voltage N-channel MOSFET, often used in power applications such as switching power supplies and motor drives.

Application

The IKP15N60T is an N-channel MOSFET primarily used in power electronics applications. Its typical areas include switch-mode power supplies, motor control, inverters, and DC-DC converters. It is suitable for high-voltage and high-current applications, making it ideal for industrial equipment, renewable energy systems, and electric vehicles. Its fast switching capabilities enhance the efficiency of power management systems.

Equivalent

The IKP15N60T is an IGBT (Insulated Gate Bipolar Transistor) with a 600V, 15A rating. Equivalent products include:
1. IRG4PH50KD
2. FGH50N60
3. IXGH50N60P
4. MGD60N60H
5. BUK456-600
Always check specific datasheets for exact specifications, as performance characteristics may vary.