IDM05G120C5

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IDM05G120C5

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  • Mfr。パート #IDM05G120C5
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  • 在庫中7070

100% オリジナル &新しい

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仕様

Brand Infineon Technologies
Subcategory Diodes & Rectifiers
Product Type SiC Schottky Diodes
Packaging Reel
Technology SiC

概要

Description

The IDM05G120C5 is an insulated gate bipolar transistor (IGBT) designed for high-efficiency power applications. It features a 1200V voltage rating and a maximum current capability of 5A, making it suitable for various uses in power electronics, including motor drives, inverters, and industrial applications. The device is known for its low switching losses and high-speed operation, which contribute to improved overall system efficiency.
With a compact package design, the IDM05G120C5 is suitable for applications where space and thermal management are critical. It also offers robust thermal performance and is typically used in conjunction with gate drivers for optimal performance.
The IGBT's characteristics make it an excellent choice for applications requiring reliable switching performance and energy efficiency, ensuring it meets the demands of modern power electronic systems.

Features

The IDM05G120C5 is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (Vds) of 120V, making it suitable for high-voltage applications.
2. Current Rating: Continuous drain current (Id) up to 5A, allowing for efficient power handling.
3. Low On-Resistance: With a typical Rds(on) of around 0.5 ohms, it minimizes conduction losses, enhancing efficiency.
4. Fast Switching Speed: Suitable for high-frequency applications due to its low gate charge and fast switching characteristics.
5. Thermal Performance: Designed with a robust thermal resistance, ensuring better heat dissipation and reliability under load.
6. Package Type: Available in a compact TO-220 package, facilitating easy mounting and heat sinking.
7. Applications: Ideal for DC-DC converters, motor drives, and power management systems.
These features make the IDM05G120C5 an excellent choice for various power electronic applications, combining efficiency and performance.

Package

The IDM05G120C5 is packaged in a TO-220 form factor, which is a standard package type for power devices. This package provides effective thermal management and allows for easy mounting on heatsinks, making it suitable for high-power applications.

Pinout

The IDM05G120C5 is a silicon carbide (SiC) MOSFET typically used in power electronic applications. It features a pin count of 5. The primary functions of the pins are as follows:
1. Gate (G) - This pin controls the switching of the MOSFET. Applying a voltage at this terminal turns the device on or off.
2. Drain (D) - This is the output pin where the load is connected. The current flows from the drain to the source when the device is on.
3. Source (S) - This pin is connected to ground or the lower potential in the circuit. It serves as the return path for the current.
4. Body Diode - Integrated within the MOSFET structure, this diode allows current to flow in the reverse direction when the MOSFET is off, providing additional functionality for applications like synchronous rectification.
The IDM05G120C5 is designed for high-efficiency operation in applications like power inverters, converters, and motor drives, with a breakdown voltage of 1200V and a current rating of 5A.

Manufacturer

The IDM05G120C5 is manufactured by Infineon Technologies AG, a leading global semiconductor company based in Germany. Infineon specializes in the design and production of a wide range of semiconductor solutions, including power management, automotive, industrial, and security applications. The company is known for its innovation in power electronics, providing components that enhance energy efficiency and performance across various sectors. Infineon serves a diverse range of industries, including automotive, consumer electronics, and industrial automation, making it a key player in the global semiconductor market.

Application

The IDM05G120C5 is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for applications in power electronics. Its primary application areas include industrial motor drives, renewable energy systems (like solar inverters), power supplies, and high-voltage switching. It's also suitable for electric vehicles and traction applications, offering efficient switching and thermal performance in high-power environments.

Equivalent

The IDM05G120C5 is a 1200V 5A IGBT module. Equivalent products include:
1. FGA120N120 - Fairchild
2. MG120J6ES - Mitsubishi
3. CM120DY-24H - Infineon
4. IRGBC30U - International Rectifier
Always verify specifications for specific applications.

出荷

出荷方法私たち

DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。


出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

支払い

Payment Methods

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1. ペイパル

2. クレジット・デビットカード

3. ワイヤー 転送

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