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IDK12G65C5
- メーカー
- Mfr。パート #IDK12G65C5
- パッケージ
- データシート
- 在庫中6376
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Brand | Infineon Technologies |
| Subcategory | Diodes & Rectifiers |
| Shipping Restrictions | Mouser does not presently sell this product in your region. |
| Package / Case | D2PAK-2 (TO-263-2) |
| Product Type | SiC Schottky Diodes |
| Factory Pack Quantity:Factory Pack Quantity | 1000 |
| Product | Schottky Silicon Carbide Diodes |
| Mounting Style | SMD/SMT |
| If - Forward Current | 12 A |
| Configuration | Single |
| Vf - Forward Voltage | 1.8 V |
| Ir - Reverse Current | 2.4 uA |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Packaging | Reel |
| Unit Weight | 0.070548 oz |
| Technology | SiC |
| Vrrm - Repetitive Reverse Voltage | 650 V |
| Ifsm - Forward Surge Current | 97 A |
| Part # Aliases | SP000930856 IDK12G65C5XTMA1 |
| Pd - Power Dissipation | 104 W |
| Tradename | CoolSiC |
概要
Description
The IDK12G65C5 is an integrated circuit typically used in high-frequency power applications, specifically designed for driving power MOSFETs in various electronic systems. Its primary function is to facilitate efficient switching, improving overall performance in power converters, inverters, and motor drives.
Key features of the IDK12G65C5 include:
1. High Voltage Capability: It can handle voltages up to 650V, suitable for demanding applications.
2. Fast Switching Speed: This device ensures quick transitions, reducing switching losses and improving efficiency.
3. Low Gate Drive Losses: It is designed to minimize energy losses during operation.
4. Protection Features: Integrated protection mechanisms, such as under-voltage lockout, help enhance reliability.
Widely utilized in industrial automation, renewable energy systems, and automotive applications, the IDK12G65C5 is crucial for improving power efficiency and system longevity.
Key features of the IDK12G65C5 include:
1. High Voltage Capability: It can handle voltages up to 650V, suitable for demanding applications.
2. Fast Switching Speed: This device ensures quick transitions, reducing switching losses and improving efficiency.
3. Low Gate Drive Losses: It is designed to minimize energy losses during operation.
4. Protection Features: Integrated protection mechanisms, such as under-voltage lockout, help enhance reliability.
Widely utilized in industrial automation, renewable energy systems, and automotive applications, the IDK12G65C5 is crucial for improving power efficiency and system longevity.
Features
The IDK12G65C5 is a specialized power semiconductor device known for its efficiency and performance in various applications. Key features include:
1. High Voltage Rating: Typically supports high voltage operations, making it suitable for industrial and automotive applications.
2. Low On-Resistance: Offers low conduction losses, enhancing efficiency in power management.
3. Fast Switching Speed: Ideal for high-frequency applications, reducing switching losses.
4. Thermal Performance: Designed to handle high temperatures, ensuring reliability in demanding environments.
5. Package Type: Often available in a compact package, facilitating integration into various electronic designs.
6. Robustness: Built to withstand harsh conditions, ensuring durability and longevity.
These features make the IDK12G65C5 a preferred choice for engineers in power electronics, motor drives, and renewable energy systems.
1. High Voltage Rating: Typically supports high voltage operations, making it suitable for industrial and automotive applications.
2. Low On-Resistance: Offers low conduction losses, enhancing efficiency in power management.
3. Fast Switching Speed: Ideal for high-frequency applications, reducing switching losses.
4. Thermal Performance: Designed to handle high temperatures, ensuring reliability in demanding environments.
5. Package Type: Often available in a compact package, facilitating integration into various electronic designs.
6. Robustness: Built to withstand harsh conditions, ensuring durability and longevity.
These features make the IDK12G65C5 a preferred choice for engineers in power electronics, motor drives, and renewable energy systems.
Package
The IDK12G65C5 is typically packaged in a DPAK (TO-252) format. This package type is commonly used for power MOSFETs and provides a compact, surface-mount solution suitable for various applications.
Pinout
The IDK12G65C5 is a high-voltage IGBT module featuring a total of 12 pins. Its primary function is to act as a switch for high-power applications in inverters, motor drives, and power conversion systems. The pins are typically designated for gate control, collector, and emitter connections, allowing it to efficiently manage high voltage and current switching. The module is designed for enhanced performance, with features such as low conduction losses and high-speed switching capabilities. Its robust construction makes it suitable for industrial applications requiring reliable and efficient power management.
Manufacturer
The IDK12G65C5 is manufactured by Infineon Technologies, a prominent semiconductor company based in Germany. Infineon specializes in the development and production of a wide range of semiconductor solutions, including power semiconductors, sensors, microcontrollers, and automotive electronics. The company serves various industries such as automotive, industrial, and consumer electronics, focusing on innovative technologies that enhance energy efficiency, safety, and connectivity. Infineon is known for its commitment to sustainability and advancing technology to meet the demands of modern electronic applications.
Application
The IDK12G65C5 is a 650V, 12A N-channel MOSFET primarily used in power management applications. Its key application areas include switch-mode power supplies (SMPS), motor drives, LED drivers, and inverters. It is suitable for high-frequency switching applications due to its low on-resistance and fast switching capabilities, making it ideal for efficient energy conversion in consumer electronics, industrial equipment, and renewable energy systems.
Equivalent
The IDK12G65C5 is a 650V IGBT (Insulated Gate Bipolar Transistor). Equivalent products include:
1. IXGH40N65C3 - Infineon
2. STGW40H65 - STMicroelectronics
3. FGA40N65 - ON Semiconductor
4. MG40N65 - Mitsubishi Electric
Ensure to check specifications like voltage, current ratings, and switching characteristics for compatibility.
1. IXGH40N65C3 - Infineon
2. STGW40H65 - STMicroelectronics
3. FGA40N65 - ON Semiconductor
4. MG40N65 - Mitsubishi Electric
Ensure to check specifications like voltage, current ratings, and switching characteristics for compatibility.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
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