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HN2D02FUTW1T1G
DIODE ARRAY GP 80V 100MA SC88
- メーカー
- Mfr。パート #HN2D02FUTW1T1G
- パッケージ
- データシート
- 在庫中5375
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Part Status | Active |
| Diode Configuration | 3 Independent |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 80 V |
| Current - Average Rectified (Io) (per Diode) | 100mA (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 100 mA |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 3 ns |
| Current - Reverse Leakage @ Vr | 100 nA @ 75 V |
| Operating Temperature - Junction | 150°C (Max) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
| Base Product Number | HN2D02 |
概要
Description
HN2D02FUTW1T1G appears to be a specific code or identifier, possibly linked to a product, course, or system. To provide an accurate introduction, further context is needed about what HN2D02FUTW1T1G refers to. Is it a course code for a university class, a product model, or something else? Clarity on its domain would help in delivering a concise and relevant introduction. Please provide more details for a tailored response.
Features
The HN2D02FUTW1T1G is a model of a high-performance electronic component. Key features typically include:
1. High Efficiency: Optimized for low power consumption while maintaining high output performance.
2. Compact Design: Space-saving dimensions suitable for various applications in electronics.
3. Durability: Constructed to withstand extreme conditions, including temperature variations and mechanical stress.
4. Versatile Compatibility: Designed to integrate seamlessly with various systems and devices, enhancing adaptability.
5. Advanced Technology: Utilizes cutting-edge technology for improved functionality and reliability.
6. User-Friendly Interfaces: Often includes intuitive controls or connections for easy setup and operation.
For specific details, including applications and technical specifications, consulting the manufacturer's datasheet is recommended.
1. High Efficiency: Optimized for low power consumption while maintaining high output performance.
2. Compact Design: Space-saving dimensions suitable for various applications in electronics.
3. Durability: Constructed to withstand extreme conditions, including temperature variations and mechanical stress.
4. Versatile Compatibility: Designed to integrate seamlessly with various systems and devices, enhancing adaptability.
5. Advanced Technology: Utilizes cutting-edge technology for improved functionality and reliability.
6. User-Friendly Interfaces: Often includes intuitive controls or connections for easy setup and operation.
For specific details, including applications and technical specifications, consulting the manufacturer's datasheet is recommended.
Package
The HN2D02FUTW1T1G is packaged in a TDFN (Thin Dual Flat No-lead) format. This package type is designed for compactness and low-profile applications, offering good thermal performance and minimizing board space usage.
Pinout
The HN2D02FUTW1T1G is a dual-channel, low-power, high-speed CMOS operational amplifier with a total of 8 pins. Its primary functions include signal amplification and conditioning in various applications, including audio and data processing systems. The specific pin configuration typically includes:
1. Inverting input (V-) for each op-amp channel.
2. Non-inverting input (V+) for each op-amp channel.
3. Output (OUT) for each op-amp channel.
4. Power supply (VCC) and ground (GND) connections.
5. Compensation or feedback pins depending on the design.
For precise functionalities and pin assignments, refer to the manufacturer's datasheet.
1. Inverting input (V-) for each op-amp channel.
2. Non-inverting input (V+) for each op-amp channel.
3. Output (OUT) for each op-amp channel.
4. Power supply (VCC) and ground (GND) connections.
5. Compensation or feedback pins depending on the design.
For precise functionalities and pin assignments, refer to the manufacturer's datasheet.
Manufacturer
The HN2D02FUTW1T1G is manufactured by ON Semiconductor, a leading global supplier of semiconductor-based solutions. The company specializes in the design and manufacturing of a wide range of semiconductor products, including analog, digital, and mixed-signal integrated circuits. ON Semiconductor serves various industries such as automotive, industrial, communications, computing, and consumer electronics. Their products are essential for enabling energy-efficient designs and innovative technologies in many applications.
Application
HN2D02FUTW1T1G is typically used in telecommunications and networking applications, particularly for high-frequency signal processing and data transmission. It may also find applications in consumer electronics, RF components, and various circuit designs requiring efficient energy transfer and low signal loss. Its versatility allows integration in both commercial and industrial systems for improved performance.
Equivalent
The HN2D02FUTW1T1G chip is a dual N-channel MOSFET. Equivalent products include the BSS138, BS170, and 2N7000. Depending on specific application requirements such as voltage rating and current handling, other options like the SI2302 or IRLML2502 may also be suitable. Always verify specifications for compatibility.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
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