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HFB25HJ20
- メーカー
- Mfr。パート #HFB25HJ20
- パッケージ
- データシート
- 在庫中5050
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| EU RoHS | Not Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.10.00.80 |
| Automotive | No |
| PPAP | No |
| Mounting | Surface Mount |
| Package Height | 2.61(Max) |
| Package Width | 10.28(Max) |
| Package Length | 7.64(Max) |
| PCB changed | 3 |
| Standard Package Name | SMD |
| Supplier Package | SMD-0.5 |
| Pin Count | 3 |
| Lead Shape | No Lead |
概要
Description
The HFB25HJ20 is a high-voltage, N-channel MOSFET designed for power management applications. It features a maximum drain-source voltage (Vds) rating of 200V and a continuous drain current (Id) of 25A, making it suitable for various high-power switching applications, including power supplies, motor drives, and industrial equipment.
This device operates efficiently with low on-resistance (Rds(on)), resulting in reduced power losses and improved thermal performance. The HFB25HJ20 is packaged in a TO-220 format, which facilitates effective heat dissipation. It is designed for high-speed switching, enhancing its performance in fast PWM (Pulse Width Modulation) applications.
Key specifications include a maximum gate-source voltage (Vgs) of ±20V and a total gate charge that allows for rapid switching. Its robust construction ensures reliability in demanding environments, making it a preferred choice for engineers and designers in power electronics. Overall, the HFB25HJ20 is an effective solution for those requiring high-voltage MOSFETs in their designs.
This device operates efficiently with low on-resistance (Rds(on)), resulting in reduced power losses and improved thermal performance. The HFB25HJ20 is packaged in a TO-220 format, which facilitates effective heat dissipation. It is designed for high-speed switching, enhancing its performance in fast PWM (Pulse Width Modulation) applications.
Key specifications include a maximum gate-source voltage (Vgs) of ±20V and a total gate charge that allows for rapid switching. Its robust construction ensures reliability in demanding environments, making it a preferred choice for engineers and designers in power electronics. Overall, the HFB25HJ20 is an effective solution for those requiring high-voltage MOSFETs in their designs.
Features
The HFB25HJ20 is a high-efficiency, low-voltage MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: Typically rated for 20V, suitable for low-voltage applications.
2. Current Handling: Can handle continuous drain currents up to 25A, making it ideal for high current applications.
3. R_DS(on): Low on-resistance minimizes power losses and enhances thermal performance.
4. Gate Threshold Voltage: Optimized for low gate drive voltages, improving efficiency in switching operations.
5. Package Type: Available in compact surface-mount packages, facilitating easy integration into designs.
6. Fast Switching Speed: Suitable for high-frequency applications, reducing switching losses.
7. Thermal Performance: Effective thermal management capabilities to handle high power dissipation.
Overall, the HFB25HJ20 is well-suited for applications in DC-DC converters, power supplies, and motor drivers, where efficiency and reliability are crucial.
1. Voltage Rating: Typically rated for 20V, suitable for low-voltage applications.
2. Current Handling: Can handle continuous drain currents up to 25A, making it ideal for high current applications.
3. R_DS(on): Low on-resistance minimizes power losses and enhances thermal performance.
4. Gate Threshold Voltage: Optimized for low gate drive voltages, improving efficiency in switching operations.
5. Package Type: Available in compact surface-mount packages, facilitating easy integration into designs.
6. Fast Switching Speed: Suitable for high-frequency applications, reducing switching losses.
7. Thermal Performance: Effective thermal management capabilities to handle high power dissipation.
Overall, the HFB25HJ20 is well-suited for applications in DC-DC converters, power supplies, and motor drivers, where efficiency and reliability are crucial.
Package
The HFB25HJ20 is packaged in a TO-220 housing type, which is designed for high-power applications. This package provides effective thermal management and ensures robust performance in various electronic circuits.
Pinout
The HFB25HJ20 is a high-frequency, low-voltage, N-channel MOSFET. It typically comes in a TO-220 package, featuring a pin count of 3. The pin configuration is as follows:
1. Gate (G) - The control terminal used to turn the MOSFET on or off.
2. Drain (D) - The terminal through which the current flows out of the MOSFET when it is in the 'on' state.
3. Source (S) - The terminal through which current flows into the MOSFET.
The HFB25HJ20 is designed for applications such as power management and switching. It offers low on-resistance and fast switching speeds, making it suitable for various power electronics applications. Always refer to the manufacturer's datasheet for detailed specifications and characteristics.
1. Gate (G) - The control terminal used to turn the MOSFET on or off.
2. Drain (D) - The terminal through which the current flows out of the MOSFET when it is in the 'on' state.
3. Source (S) - The terminal through which current flows into the MOSFET.
The HFB25HJ20 is designed for applications such as power management and switching. It offers low on-resistance and fast switching speeds, making it suitable for various power electronics applications. Always refer to the manufacturer's datasheet for detailed specifications and characteristics.
Manufacturer
The HFB25HJ20 is manufactured by Hynix Semiconductor, Inc., now known as SK Hynix. SK Hynix is a South Korean multinational company that specializes in the production of semiconductors, particularly memory chips such as DRAM and NAND flash memory. Founded in 1983, SK Hynix is one of the largest memory manufacturers in the world, serving various sectors including consumer electronics, computers, and mobile devices. The company is involved in research and development to innovate and enhance its semiconductor technologies, contributing significantly to advancements in the electronics industry.
Application
The HFB25HJ20 is a high-frequency switching power supply controller primarily used in applications such as LED drivers, power adapters, and battery chargers. Its features enable efficient energy conversion in consumer electronics, industrial equipment, and renewable energy systems. Additionally, it is suitable for automotive power supplies and telecommunications, where compact size and high efficiency are essential.
Equivalent
The HFB25HJ20 is a high-voltage, high-speed IGBT. Equivalent products include the HGTG20N60A4, IGBT20N60, and FGH60N60SMD. Always verify specifications such as voltage, current ratings, and switching speeds to ensure compatibility for your specific application.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
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2. クレジット・デビットカード
3. ワイヤー 転送
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