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H26M62002JPR
32GB eMMC 5.1 FBGA-96 Memory (ICs) RoHS
- メーカー
- Mfr。パート #H26M62002JPR
- パッケージ
- データシート H26M62002JPR DataSheet
- 在庫中24604
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仕様
| Packaging | FBGA-96 |
| Controller Operating Voltage (VCCQ) | 1.7V~1.95V |
| Controller Stand-By Current | 120uA |
| Interface | eMMC 5.1 |
| Memory Size | 32GB |
| NAND Operating Voltage (VCCF) | 2.7V~3.6V |
| NAND Stand-By Current | 60uA |
| Operating temperature | -25℃~+85℃ |
| Reading Speed in Sequence | 280MB/S |
| Writing Speed in Sequence | 90MB/S |
概要
Description
H26M62002JPR is a specific model of DRAM (Dynamic Random Access Memory) produced by manufacturers such as Hynix. This memory chip typically features a density of 2 Gigabits (Gb) and is commonly used in various electronic devices, including smartphones, tablets, and computers.
The designation "H26M" refers to the general family of the memory chip, while "62002" indicates specific characteristics such as its architecture and manufacturing process. The "JPR" suffix often denotes packaging and speed grade.
H26M62002JPR is designed to provide high-speed data processing and efficient performance, aligning with the demands of modern computing applications. It utilizes advanced fabrication technologies to enhance reliability and power efficiency, making it suitable for high-performance and embedded systems.
Overall, this DRAM chip plays a crucial role in enabling devices to run smoothly by facilitating quick data access and storage.
The designation "H26M" refers to the general family of the memory chip, while "62002" indicates specific characteristics such as its architecture and manufacturing process. The "JPR" suffix often denotes packaging and speed grade.
H26M62002JPR is designed to provide high-speed data processing and efficient performance, aligning with the demands of modern computing applications. It utilizes advanced fabrication technologies to enhance reliability and power efficiency, making it suitable for high-performance and embedded systems.
Overall, this DRAM chip plays a crucial role in enabling devices to run smoothly by facilitating quick data access and storage.
Features
The H26M62002JPR is a 2 Mb (256K x 8) NAND flash memory device designed for various applications requiring non-volatile storage. Key features include:
1. Memory Structure: It utilizes a NAND architecture, providing efficient storage density and performance.
2. Access Time: Offers fast read access times, typically around 25 ns, enabling quick data retrieval.
3. Data Management: Supports advanced error correction features, enhancing data reliability.
4. Endurance: Designed for high endurance, allowing a substantial number of program/erase cycles, typically up to 100,000.
5. Power Consumption: Low power operation modes help in energy conservation, making it suitable for battery-powered devices.
6. Interface: Compatible with standard NAND Flash interfaces, facilitating easy integration into various systems.
7. Temperature Range: Operates effectively across a wide temperature range, making it suitable for industrial applications.
These features make the H26M62002JPR suitable for applications in consumer electronics, automotive, and industrial sectors where reliable memory is essential.
1. Memory Structure: It utilizes a NAND architecture, providing efficient storage density and performance.
2. Access Time: Offers fast read access times, typically around 25 ns, enabling quick data retrieval.
3. Data Management: Supports advanced error correction features, enhancing data reliability.
4. Endurance: Designed for high endurance, allowing a substantial number of program/erase cycles, typically up to 100,000.
5. Power Consumption: Low power operation modes help in energy conservation, making it suitable for battery-powered devices.
6. Interface: Compatible with standard NAND Flash interfaces, facilitating easy integration into various systems.
7. Temperature Range: Operates effectively across a wide temperature range, making it suitable for industrial applications.
These features make the H26M62002JPR suitable for applications in consumer electronics, automotive, and industrial sectors where reliable memory is essential.
Package
The H26M62002JPR is a NAND flash memory chip packaged in a TSOP (Thin Small Outline Package), specifically in a 48-pin configuration. This package type is designed for compactness and efficient heat dissipation in electronic applications.
Pinout
The H26M62002JPR is a 2 Gbit (256MB) NAND Flash memory chip manufactured by Hynix. It comes in a 48-ball BGA (Ball Grid Array) package, meaning it has 48 pins.
The primary functions of the H26M62002JPR include:
- Data Storage: It is designed for high-density storage applications, suitable for consumer electronics, mobile devices, and industrial applications.
- Data Transfer: Supports reliable data transfer rates, with an interface compatible with various systems.
- Erase and Write Operations: Capable of performing multiple erase and write cycles, essential for efficient data management.
This NAND Flash is typically used in applications requiring reliable, high-capacity memory solutions.
The primary functions of the H26M62002JPR include:
- Data Storage: It is designed for high-density storage applications, suitable for consumer electronics, mobile devices, and industrial applications.
- Data Transfer: Supports reliable data transfer rates, with an interface compatible with various systems.
- Erase and Write Operations: Capable of performing multiple erase and write cycles, essential for efficient data management.
This NAND Flash is typically used in applications requiring reliable, high-capacity memory solutions.
Manufacturer
The H26M62002JPR is manufactured by Hyundai Micro Electronics, a subsidiary of Hyundai Group. Hyundai Micro Electronics specializes in the production of memory products, including NAND flash and DRAM chips, as well as other semiconductor components. The company is part of the larger Hyundai conglomerate, which operates across various sectors including automotive, construction, and electronics. Hyundai Micro Electronics focuses on innovation and technology development in the semiconductor industry, catering to a range of applications in consumer electronics, telecommunications, and computing.
Application
The H26M62002JPR is a 2 Mbit (256K x 8) NAND flash memory chip primarily used in consumer electronics, such as smartphones, tablets, and digital cameras. It is suitable for applications requiring non-volatile data storage, including firmware updates, multimedia content storage, and data logging in various embedded systems. Its compact size and speed make it ideal for portable devices.
Equivalent
The H26M62002JPR chip is a 2 Gb NAND flash memory device. Equivalent products include the K9GAG08U0M from Samsung, MT29F2G01ABAEAWP from Micron, and W29N02GVS1 from Winbond. Always verify compatibility based on specifications and intended application before substitution.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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