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H26M41208HPR
8GB eMMC 5.1 FBGA-153(11.5x13) Memory (ICs) RoHS
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- Mfr。パート #H26M41208HPR
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- データシート H26M41208HPR DataSheet
- 在庫中8747
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仕様
| Packaging | FBGA-153(11.5x13) |
| Controller Operating Voltage (VCCQ) | 1.7V~1.95V;2.7V~3.3V |
| Controller Stand-By Current | 150uA |
| Interface | eMMC 5.1 |
| Memory Size | 8GB |
| NAND Operating Voltage (VCCF) | 2.7V |
| NAND Stand-By Current | 50uA |
| Operating temperature | -25℃~+85℃ |
| Reading Speed in Sequence | 200MB/S |
| Writing Speed in Sequence | 35MB/S |
概要
Description
H26M41208HPR is a type of NAND flash memory chip manufactured by Hynix (now SK Hynix). It is designed for use in various electronic devices that require high-speed data storage and retrieval, such as smartphones, tablets, and solid-state drives (SSDs). The "HPR" designation typically indicates a high-performance variant of the chip, offering enhanced read and write speeds compared to standard models.
NAND flash memory operates by storing data in memory cells made of floating-gate transistors, allowing for non-volatile data storage—meaning the data is retained even when power is turned off. The H26M41208HPR chip is built to provide a reliable and efficient solution for applications that demand quick access to large amounts of data.
This chip is part of a broader trend toward higher-density memory solutions, catering to the ever-growing need for data storage in a world increasingly reliant on digital technology.
NAND flash memory operates by storing data in memory cells made of floating-gate transistors, allowing for non-volatile data storage—meaning the data is retained even when power is turned off. The H26M41208HPR chip is built to provide a reliable and efficient solution for applications that demand quick access to large amounts of data.
This chip is part of a broader trend toward higher-density memory solutions, catering to the ever-growing need for data storage in a world increasingly reliant on digital technology.
Features
The H26M41208HPR is a 4 Mbit (512K x 8 bits) NAND flash memory device typically used in consumer electronics and other applications requiring non-volatile storage. Key features include:
1. Density: 4 Mbit capacity, suitable for a variety of applications.
2. Architecture: NAND flash architecture allows for high-density and efficient data storage.
3. Access Speed: Fast read and write speeds, enabling quick data retrieval and storage operations.
4. Endurance: Designed for high endurance with the ability to withstand a significant number of program/erase cycles.
5. Interface: Standard interface for easy integration into systems.
6. Power Efficiency: Low power consumption during operation, enhancing battery life in portable devices.
7. Data Retention: Reliable data retention capabilities, making it suitable for long-term storage.
8. Temperature Range: Operates effectively over a wide temperature range, suitable for various environments.
These features make the H26M41208HPR an excellent choice for applications such as mobile devices, digital cameras, and embedded systems.
1. Density: 4 Mbit capacity, suitable for a variety of applications.
2. Architecture: NAND flash architecture allows for high-density and efficient data storage.
3. Access Speed: Fast read and write speeds, enabling quick data retrieval and storage operations.
4. Endurance: Designed for high endurance with the ability to withstand a significant number of program/erase cycles.
5. Interface: Standard interface for easy integration into systems.
6. Power Efficiency: Low power consumption during operation, enhancing battery life in portable devices.
7. Data Retention: Reliable data retention capabilities, making it suitable for long-term storage.
8. Temperature Range: Operates effectively over a wide temperature range, suitable for various environments.
These features make the H26M41208HPR an excellent choice for applications such as mobile devices, digital cameras, and embedded systems.
Package
The H26M41208HPR is a DRAM memory chip packaged in a 48-ball FBGA (Fine Ball Grid Array) format. This packaging type allows for a compact and efficient layout, suitable for various electronic applications, particularly in mobile and portable devices.
Pinout
The H26M41208HPR is a 4M x 8-bit NAND Flash memory chip. It typically features a 34-pin TSOP (Thin Small Outline Package) form factor. The pin count includes various signal pins for data, address, control, and power supply.
Key functions of the pins include:
- Data Pins (D0-D7): Carry the 8-bit data.
- Address Pins (A0-A19): Used for selecting memory locations.
- Control Pins: Include signals like CE (Chip Enable), RE (Read Enable), WE (Write Enable), and OE (Output Enable) to manage read and write operations.
- Power Supply Pins: Typically includes Vcc and GND for power supply.
This device is used in various applications like consumer electronics, automotive, and embedded systems for data storage.
Key functions of the pins include:
- Data Pins (D0-D7): Carry the 8-bit data.
- Address Pins (A0-A19): Used for selecting memory locations.
- Control Pins: Include signals like CE (Chip Enable), RE (Read Enable), WE (Write Enable), and OE (Output Enable) to manage read and write operations.
- Power Supply Pins: Typically includes Vcc and GND for power supply.
This device is used in various applications like consumer electronics, automotive, and embedded systems for data storage.
Manufacturer
The H26M41208HPR is manufactured by Hynix Semiconductor, which is now known as SK Hynix after being acquired by SK Group in 2012. SK Hynix is a South Korean multinational company specializing in the production of semiconductors, particularly dynamic random-access memory (DRAM) and flash memory chips. Established in 1983, it is one of the largest memory semiconductor manufacturers in the world, catering to various sectors including consumer electronics, computing, and mobile devices. The company focuses on innovation and technology advancements in memory solutions, playing a significant role in the global electronics supply chain.
Application
The H26M41208HPR is a NAND flash memory chip commonly used in various applications, including mobile devices, smartphones, digital cameras, solid-state drives (SSDs), and embedded systems. Its high storage capacity and speed make it suitable for data-intensive applications such as multimedia storage, firmware updates, and file management in consumer electronics.
Equivalent
The H26M41208HPR chip is a 4Mb (512KB x 8) DRAM. Equivalent products include the Hynix HY5DU121621BFP-12, Micron MT48LC4M16A2P-75, and Samsung K4S281632F. Ensure to verify pin configuration, voltage, and timing to ensure compatibility.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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