GS61004B-TR

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GS61004B-TR

GS61004B-TR

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  • Mfr。パート #GS61004B-TR
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  • 在庫中25592

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仕様

Part Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V
Rds On (Max) @ Id, Vgs 20mOhm @ 13.5A, 6V
Vgs(th) (Max) @ Id 1.3V @ 7mA
Gate Charge (Qg) (Max) @ Vgs 6.2 nC @ 6 V
Vgs (Max) +7V, -10V
Input Capacitance (Ciss) (Max) @ Vds 295 pF @ 50 V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 3-SMD, No Lead

概要

Description

GS61004B-TR is a high-performance, low-power, precision operational amplifier (op-amp) designed for various applications, including signal conditioning, filtering, and data acquisition systems. Known for its low offset voltage and low noise characteristics, this op-amp enhances the accuracy and reliability of signal processing tasks.
The "B" in the designation indicates the specific variant or grade of the op-amp, which may offer improved specifications over previous models. The "TR" suffix signifies that the component is available in tape and reel packaging, making it suitable for automated assembly processes.
Key features typically include a wide supply voltage range, high slew rate, and low distortion, making it ideal for both consumer electronics and industrial applications. Its versatility allows it to be used in audio equipment, medical devices, and instrumentation, providing designers with the flexibility to meet diverse performance requirements. Overall, GS61004B-TR stands out as an effective solution for precision amplification needs.

Features

The GS61004B-TR is a high-performance, 4-channel, precision operational amplifier designed for various applications. Its key features include:
1. Voltage Range: Supports a wide supply voltage range, typically from ±2.5V to ±15V, allowing flexibility in design.
2. Low Input Offset Voltage: Offers low input offset voltage for enhanced accuracy in signal processing.
3. High Slew Rate: Features a high slew rate, enabling fast signal response, suitable for high-frequency applications.
4. Low Noise: Delivers low noise performance, ensuring minimal signal distortion, which is critical for audio and precision measurement applications.
5. Wide Bandwidth: Provides a significant bandwidth, making it effective for high-speed operations and a variety of signal conditioning tasks.
6. Rail-to-Rail Output: Supports rail-to-rail output, maximizing the dynamic range of the output signal.
7. Temperature Range: Operates effectively over a wide temperature range, ensuring reliability in diverse environments.
These features make the GS61004B-TR suitable for applications in instrumentation, audio processing, and signal conditioning.

Package

The GS61004B-TR is offered in a 4mm x 4mm QFN (Quad Flat No-lead) package, which features a low profile and excellent thermal performance, making it suitable for compact electronic designs.

Pinout

The GS61004B-TR is a high-efficiency, low-voltage, dual-channel gate driver. It features a pin count of 8. The pin functions are as follows:
1. VCC: Supply voltage for the gate driver.
2. GND: Ground reference.
3. HO: High-side output to drive the upper MOSFET.
4. LO: Low-side output to drive the lower MOSFET.
5. VS: Source connection for the high-side gate driver, connected to the source of the high-side MOSFET.
6. COM: Common ground reference for the low-side driver.
7. IN: Input control signal for the low-side driver.
8. PHASE: Provides the reference for the gate driver and is connected to the switching node.
This driver is designed for applications requiring high-speed switching and optimal performance in power management systems.

Manufacturer

The GS61004B-TR is manufactured by GaN Systems Inc., a company specializing in Gallium Nitride (GaN) semiconductor solutions. GaN Systems focuses on developing innovative power conversion technologies that enhance efficiency, reduce size, and improve performance in various applications, including power supplies, electric vehicles, and renewable energy systems. Their products are designed to leverage the advantages of GaN technology, which offers higher efficiency and smaller form factors compared to traditional silicon-based solutions. Founded in 2008 and based in Ottawa, Canada, GaN Systems is recognized for its role in advancing the adoption of GaN in the power electronics industry.

Application

The GS61004B-TR is a high-voltage power MOSFET driver used in various applications, including switch-mode power supplies, solar inverters, electric vehicle (EV) chargers, and industrial motor drives. Its primary functions involve driving high-speed power switches in converters and inverters, ensuring efficient power management and thermal performance.

Equivalent

The GS61004B-TR is a low-dropout (LDO) linear regulator. Equivalent products include:
1. LM1117 - A popular adjustable LDO.
2. MIC5219 - Low dropout voltage regulator with a similar output voltage range.
3. LT1117 - Another low-dropout option with adjustable output.
4. TPS780 - Offers low dropout and various output options.
Always check specific electrical characteristics to ensure compatibility with your application.

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出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。

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