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GD25S512MD
NOR Flash 3.3V Uniform Sector Dual and Q
- メーカー
- Mfr。パート #GD25S512MD
- パッケージ
- データシート GD25S512MD DataSheet
- 在庫中10792
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
概要
Description
The GD25S512MD is a serial NOR Flash memory chip produced by GigaDevice, featuring a storage capacity of 512 megabits (64 megabytes). It utilizes a Quad SPI (QSPI) interface, enabling high-speed data transfer rates of up to 104 MHz, which enhances performance for applications requiring fast read and write operations.
This memory device is ideal for embedded systems, IoT applications, and consumer electronics, providing features such as low power consumption, uniform memory block architecture, and multiple read modes. It supports various programming and erasing methods, including sector and chip erase, enhancing flexibility for developers.
The GD25S512MD is built to operate within a temperature range of -40°C to +85°C, making it suitable for industrial applications. Its compact package options allow for efficient space utilization on PCBs. Overall, the GD25S512MD is a reliable choice for applications needing durable, high-capacity non-volatile storage.
This memory device is ideal for embedded systems, IoT applications, and consumer electronics, providing features such as low power consumption, uniform memory block architecture, and multiple read modes. It supports various programming and erasing methods, including sector and chip erase, enhancing flexibility for developers.
The GD25S512MD is built to operate within a temperature range of -40°C to +85°C, making it suitable for industrial applications. Its compact package options allow for efficient space utilization on PCBs. Overall, the GD25S512MD is a reliable choice for applications needing durable, high-capacity non-volatile storage.
Features
The GD25S512MD is a 512 Mbit (64 MB) serial NOR Flash memory chip from GigaDevice. Key features include:
1. Interface: Supports SPI protocol, compatible with standard, dual, and quad modes for high-speed data transfer.
2. Memory Density: 512 Mbit capacity, organized as 64M x 8 bits.
3. Speed: Operates at a clock frequency of up to 104 MHz in quad SPI mode.
4. Data Retention: Offers a minimum data retention of 20 years.
5. Endurance: Supports up to 100,000 program/erase cycles per sector.
6. Block Architecture: Contains multiple sectors (typically 4 KB, 32 KB, or 64 KB) for flexible memory management and efficient data storage.
7. Power Supply: Operates on a voltage range of 2.7V to 3.6V.
8. Package Options: Available in various packages, including WSON, SOIC, and DFN for compact designs.
This chip is ideal for applications in consumer electronics, automotive, and industrial systems where non-volatile storage is required.
1. Interface: Supports SPI protocol, compatible with standard, dual, and quad modes for high-speed data transfer.
2. Memory Density: 512 Mbit capacity, organized as 64M x 8 bits.
3. Speed: Operates at a clock frequency of up to 104 MHz in quad SPI mode.
4. Data Retention: Offers a minimum data retention of 20 years.
5. Endurance: Supports up to 100,000 program/erase cycles per sector.
6. Block Architecture: Contains multiple sectors (typically 4 KB, 32 KB, or 64 KB) for flexible memory management and efficient data storage.
7. Power Supply: Operates on a voltage range of 2.7V to 3.6V.
8. Package Options: Available in various packages, including WSON, SOIC, and DFN for compact designs.
This chip is ideal for applications in consumer electronics, automotive, and industrial systems where non-volatile storage is required.
Package
The GD25S512MD is typically available in an 8-pin SOIC (Small Outline Integrated Circuit) package and also in WSON (Wafer Level Chip Scale Package) formats. These packages facilitate easy integration into various electronic circuits for applications such as data storage.
Pinout
The GD25S512MD is a 512 Mb (64 MB) serial NOR Flash memory. It comes in a 16-pin SOIC (Small Outline Integrated Circuit) package. The pin functions are as follows:
1. CS (Chip Select) – Active low input to select the device.
2. SO (Serial Output) – Data output for read operations.
3. WP (Write Protect) – Input to protect the memory from accidental writes.
4. VSS (Ground) – Ground connection.
5. SCK (Serial Clock) – Clock input for synchronous communication.
6. SI (Serial Input) – Data input for write operations.
7. HOLD – Input to pause operations without resetting the device.
8. VCC – Power supply connection.
Additional pins may be present for specific functionality, such as additional ground or power connections. The device supports various modes of operation, including Quad SPI, allowing for high-speed data transfer.
1. CS (Chip Select) – Active low input to select the device.
2. SO (Serial Output) – Data output for read operations.
3. WP (Write Protect) – Input to protect the memory from accidental writes.
4. VSS (Ground) – Ground connection.
5. SCK (Serial Clock) – Clock input for synchronous communication.
6. SI (Serial Input) – Data input for write operations.
7. HOLD – Input to pause operations without resetting the device.
8. VCC – Power supply connection.
Additional pins may be present for specific functionality, such as additional ground or power connections. The device supports various modes of operation, including Quad SPI, allowing for high-speed data transfer.
Manufacturer
The GD25S512MD is manufactured by Gigadevice Semiconductor, a Chinese company that specializes in the design and production of memory products, including NOR flash memory, NAND flash, and DRAM. Founded in 2005, Gigadevice serves various markets such as consumer electronics, automotive, and industrial applications. The company focuses on innovative memory solutions, offering high-performance and cost-effective products for embedded systems and other applications. Gigadevice is recognized for its commitment to quality and technological advancement in the semiconductor industry.
Application
The GD25S512MD is a serial NOR flash memory chip commonly used in embedded systems for applications such as firmware storage, code execution, and data logging. It is suitable for consumer electronics, automotive systems, industrial equipment, IoT devices, and networking hardware. Its high storage capacity and fast read speeds make it ideal for applications requiring reliable and efficient non-volatile memory.
Equivalent
The GD25S512MD is a 512Mb (64MB) Serial NOR Flash memory chip. Equivalent products include:
1. Winbond W25Q512JV
2. Microchip SST26VF512
3. Spansion S25FL512S
4. Macronix MX25L51245G
These alternatives offer similar specifications and interfaces, but it's important to verify specific features and compatibility for your application.
1. Winbond W25Q512JV
2. Microchip SST26VF512
3. Spansion S25FL512S
4. Macronix MX25L51245G
These alternatives offer similar specifications and interfaces, but it's important to verify specific features and compatibility for your application.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
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3. ワイヤー 転送
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