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GD25B127DSIGR
NOR Flash 128Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /T&R
- メーカー
- Mfr。パート #GD25B127DSIGR
- パッケージ
- データシート
- 在庫中23706
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
概要
Description
The GD25B127DSIGR is a serial NOR Flash memory chip produced by GigaDevice, featuring a storage capacity of 128Mb (16MB). It operates on a voltage range of 2.7V to 3.6V and uses a Quad SPI (QSPI) interface, which allows for high-speed data transfer, making it suitable for applications requiring fast read and write operations. This memory device supports various modes, including Dual and Quad I/O, enhancing performance during data access.
It features a flexible erase scheme, allowing for sector, block, and chip erase, along with a robust security mechanism via a hardware write protection feature. The GD25B127DSIGR is commonly used in embedded systems, consumer electronics, and automotive applications, where reliable non-volatile memory is crucial. Its small form factor and low power consumption make it ideal for space-constrained designs.
It features a flexible erase scheme, allowing for sector, block, and chip erase, along with a robust security mechanism via a hardware write protection feature. The GD25B127DSIGR is commonly used in embedded systems, consumer electronics, and automotive applications, where reliable non-volatile memory is crucial. Its small form factor and low power consumption make it ideal for space-constrained designs.
Features
The GD25B127DSIGR is a 128 Mb (16 MB) Serial NOR Flash memory from GigaDevice, featuring a dual and quad SPI interface. Key features include:
1. Memory Density: 128 Megabits (16 MB).
2. Interface: Supports both single, dual, and quad SPI modes for high-speed data transfer.
3. Operating Voltage: Typically operates at 3V (2.7V to 3.6V).
4. Read Speed: Up to 104 MB/s in quad SPI mode.
5. Program/Erase Cycles: Endurance of up to 100,000 cycles.
6. Data Retention: Provides data retention for up to 20 years.
7. Package Types: Available in various packages including SOIC8 and WSON.
8. Security Features: Supports multiple security features like OTP (One-Time Programmable) areas and hardware write protection.
This memory is commonly used in applications like consumer electronics, automotive systems, and IoT devices due to its reliability and performance.
1. Memory Density: 128 Megabits (16 MB).
2. Interface: Supports both single, dual, and quad SPI modes for high-speed data transfer.
3. Operating Voltage: Typically operates at 3V (2.7V to 3.6V).
4. Read Speed: Up to 104 MB/s in quad SPI mode.
5. Program/Erase Cycles: Endurance of up to 100,000 cycles.
6. Data Retention: Provides data retention for up to 20 years.
7. Package Types: Available in various packages including SOIC8 and WSON.
8. Security Features: Supports multiple security features like OTP (One-Time Programmable) areas and hardware write protection.
This memory is commonly used in applications like consumer electronics, automotive systems, and IoT devices due to its reliability and performance.
Package
The GD25B127DSIGR is available in a SOIC-8 (Small Outline Integrated Circuit) package type, which features an 8-pin configuration. This compact package is designed for surface mounting on printed circuit boards (PCBs).
Pinout
The GD25B127DSIGR is a 128 Mbit (16 MB) Serial NOR Flash memory device. It has a total of 8 pins. The pin functions are as follows:
1. VCC: Power supply.
2. GND: Ground.
3. SCK: Serial Clock input.
4. CS#: Chip Select (active low).
5. SI: Serial Data Input.
6. SO: Serial Data Output.
7. WP#: Write Protect (active low).
8. HOLD#: Hold (active low) to pause operations.
This device supports various interfaces, including SPI, and is used for applications requiring non-volatile storage.
1. VCC: Power supply.
2. GND: Ground.
3. SCK: Serial Clock input.
4. CS#: Chip Select (active low).
5. SI: Serial Data Input.
6. SO: Serial Data Output.
7. WP#: Write Protect (active low).
8. HOLD#: Hold (active low) to pause operations.
This device supports various interfaces, including SPI, and is used for applications requiring non-volatile storage.
Manufacturer
The GD25B127DSIGR is manufactured by GigaDevice Semiconductor Inc., a company known for producing flash memory solutions, including NOR Flash and NAND Flash memory products. GigaDevice, founded in 2005 and headquartered in Beijing, China, focuses on providing high-performance, reliable memory chips for a variety of applications, including consumer electronics, automotive, and industrial sectors. The company is recognized for its innovation in semiconductor technology and has established a significant presence in the global memory market.
Application
The GD25B127DSIGR is a high-performance serial NOR Flash memory used in various applications, including consumer electronics, IoT devices, automotive systems, industrial automation, and networking equipment. It provides non-volatile storage for firmware, code execution, and data logging, facilitating firmware updates and reliable data retention in low-power environments.
Equivalent
The GD25B127DSIGR is a 128Mb serial NOR Flash memory chip. Equivalent products include:
1. Winbond W25Q128JV
2. Micron MT25QL128ABA
3. Adesto AT25DF128A
4. Spansion S25FL127S
These alternatives offer similar specifications and functionalities, but always verify compatibility with your specific application requirements.
1. Winbond W25Q128JV
2. Micron MT25QL128ABA
3. Adesto AT25DF128A
4. Spansion S25FL127S
These alternatives offer similar specifications and functionalities, but always verify compatibility with your specific application requirements.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
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