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FQU13N10LTU
MOSFET N-CH 100V 10A IPAK
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- Mfr。パート #FQU13N10LTU
- パッケージ
- データシート FQU13N10LTU DataSheet
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仕様
| Series | QFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 520 pF @ 25 V |
| Power Dissipation (Max) | 2.5W (Ta), 40W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | IPAK |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Base Product Number | FQU13N10 |
概要
Description
The FQU13N10LTU is a specific model of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by ON Semiconductor. It is designed for use in power management applications, providing efficient power conversion and management in various electronic devices. This MOSFET features a low on-state resistance, which helps reduce power loss, and is capable of handling high-speed switching due to its fast switching characteristics. The FQU13N10LTU is commonly used in applications such as switching regulators, motor drivers, and other power amplification or conversion systems. It is housed in a TO-220 package, which allows for efficient heat dissipation and easy mounting on heat sinks.
Features
The FQU13N10LTU is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) known for its efficient performance in various electronic applications. Here are its key features:
1. Voltage Rating: It typically has a drain-source voltage (V_DS) rating of 100V, which makes it suitable for medium to high voltage applications.
2. Current Rating: The device usually supports a continuous drain current (I_D) of around 11A, allowing it to handle moderate power loads.
3. Low On-Resistance: It features a low R_DS(on), ensuring minimal power loss and efficient operation when the transistor is in the "on" state.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically around 2V to 4V, facilitating easy control with standard logic level signals.
5. Fast Switching: The MOSFET is designed for fast switching times, enhancing performance in high-frequency applications.
6. Thermal Stability: It usually comes with good thermal stability, often housed in a TO-252 or similar package to aid heat dissipation.
7. Ruggedness: Offers high avalanche energy and is generally robust, capable of withstanding demanding environments.
These features make the FQU13N10LTU suitable for power management, motor control, and switching applications in consumer electronics and automotive sectors.
1. Voltage Rating: It typically has a drain-source voltage (V_DS) rating of 100V, which makes it suitable for medium to high voltage applications.
2. Current Rating: The device usually supports a continuous drain current (I_D) of around 11A, allowing it to handle moderate power loads.
3. Low On-Resistance: It features a low R_DS(on), ensuring minimal power loss and efficient operation when the transistor is in the "on" state.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically around 2V to 4V, facilitating easy control with standard logic level signals.
5. Fast Switching: The MOSFET is designed for fast switching times, enhancing performance in high-frequency applications.
6. Thermal Stability: It usually comes with good thermal stability, often housed in a TO-252 or similar package to aid heat dissipation.
7. Ruggedness: Offers high avalanche energy and is generally robust, capable of withstanding demanding environments.
These features make the FQU13N10LTU suitable for power management, motor control, and switching applications in consumer electronics and automotive sectors.
Package
The FQU13N10LTU is a MOSFET transistor, and its package type is typically a TO-252, also known as a DPAK. This surface-mount package is commonly used for medium-power applications.
Pinout
The FQU13N10LTU is an N-channel MOSFET. It typically comes in a TO-251 package, also known as the I-PAK. This package generally features three pins. The pin count and their primary functions are as follows:
1. Gate (G): This pin controls the MOSFET's switching state. By applying a voltage to the gate, you can control the current flow between the drain and source.
2. Drain (D): This is the terminal through which the main current flows into the device when it is in the 'on' state.
3. Source (S): The current flows out through this terminal when the MOSFET is 'on'.
These three pins are essential for the operation of the MOSFET, allowing it to act as a switch or amplifier in electronic circuits. The FQU13N10LTU is used in various applications requiring efficient high-speed switching.
1. Gate (G): This pin controls the MOSFET's switching state. By applying a voltage to the gate, you can control the current flow between the drain and source.
2. Drain (D): This is the terminal through which the main current flows into the device when it is in the 'on' state.
3. Source (S): The current flows out through this terminal when the MOSFET is 'on'.
These three pins are essential for the operation of the MOSFET, allowing it to act as a switch or amplifier in electronic circuits. The FQU13N10LTU is used in various applications requiring efficient high-speed switching.
Manufacturer
The FQU13N10LTU is manufactured by ON Semiconductor. ON Semiconductor, now known as onsemi, is a company that designs and manufactures semiconductor components. They provide a wide range of products including power and signal management, logic, discrete, and custom devices for various applications. onsemi serves a variety of industries such as automotive, industrial, consumer electronics, communications, computing, and medical. The company focuses on energy-efficient innovations, driving sustainable solutions across these sectors.
Application
The FQU13N10LTU is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in applications requiring efficient power management. Its primary application areas include switching power supplies, DC-DC converters, motor controllers, and load switches. Due to its ability to handle high voltage and current, it is also used in automotive systems, industrial equipment, and consumer electronics where efficient switching and energy management are crucial.
Equivalent
The FQU13N10LTU is an N-channel MOSFET. Equivalent products include IRF530, IRF540, and NTD4906N. Ensure to verify electrical characteristics such as voltage, current ratings, and package compatibility before substituting.
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