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FQT7N10LTF
POWER FIELD-EFFECT TRANSISTOR, 1
- メーカー
- Mfr。パート #FQT7N10LTF
- パッケージ SOT-223-4
- データシート FQT7N10LTF DataSheet
- 在庫中7133
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仕様
| Package | Bulk |
| Series | QFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 1.7A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 5V, 10V |
| RdsOn(Max)@IdVgs | 350mOhm @ 850mA, 10V |
| Vgs(th)(Max)@Id | 2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 6 nC @ 5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 290 pF @ 25 V |
| PowerDissipation(Max) | 2W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-223-4 |
概要
Description
FQT7N10LTF is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. This component is utilized for switching and amplification in various electronic devices. Key specifications typically include a high voltage rating (up to 100V), a continuous drain current (around 7A), and low on-resistance, which minimizes power loss during operation.
The "LTF" in its designation often indicates a specific package type or manufacturer designation, which may relate to thermal performance or physical dimensions. MOSFETs like the FQT7N10LTF are commonly used in power supplies, motor drivers, and other circuits requiring efficient control of high currents and voltages.
When selecting this component, consider parameters like gate threshold voltage, thermal resistance, and safe operating area to ensure compatibility with your application. Overall, the FQT7N10LTF is a versatile and efficient choice for modern electronic designs.
The "LTF" in its designation often indicates a specific package type or manufacturer designation, which may relate to thermal performance or physical dimensions. MOSFETs like the FQT7N10LTF are commonly used in power supplies, motor drivers, and other circuits requiring efficient control of high currents and voltages.
When selecting this component, consider parameters like gate threshold voltage, thermal resistance, and safe operating area to ensure compatibility with your application. Overall, the FQT7N10LTF is a versatile and efficient choice for modern electronic designs.
Features
The FQT7N10LTF is an N-channel MOSFET designed for high-performance applications. Here are its key features:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 100V, making it suitable for various high-voltage applications.
2. Current Rating: It supports a continuous drain current (I_D) of up to 7A.
3. R_DS(on): The on-resistance is low, typically around 0.25 ohms at a gate-source voltage (V_GS) of 10V, which minimizes power loss during operation.
4. Gate Threshold Voltage: It has a gate threshold voltage (V_GS(th)) typically between 2V and 4V, facilitating easy drive compatibility.
5. Package: Available in a TO-220 package, allowing for efficient heat dissipation.
6. Switching Performance: It offers fast switching speeds, making it ideal for applications like power supplies, motor control, and other switching applications.
7. Thermal Resistance: The device features a low thermal resistance, enhancing reliability in demanding scenarios.
These features make the FQT7N10LTF suitable for a wide range of electronic applications.
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 100V, making it suitable for various high-voltage applications.
2. Current Rating: It supports a continuous drain current (I_D) of up to 7A.
3. R_DS(on): The on-resistance is low, typically around 0.25 ohms at a gate-source voltage (V_GS) of 10V, which minimizes power loss during operation.
4. Gate Threshold Voltage: It has a gate threshold voltage (V_GS(th)) typically between 2V and 4V, facilitating easy drive compatibility.
5. Package: Available in a TO-220 package, allowing for efficient heat dissipation.
6. Switching Performance: It offers fast switching speeds, making it ideal for applications like power supplies, motor control, and other switching applications.
7. Thermal Resistance: The device features a low thermal resistance, enhancing reliability in demanding scenarios.
These features make the FQT7N10LTF suitable for a wide range of electronic applications.
Package
The FQT7N10LTF is typically packaged in a TO-220 format. This package type allows for efficient heat dissipation and is commonly used for power MOSFETs in various applications.
Pinout
The FQT7N10LTF is a N-channel MOSFET from Fairchild Semiconductor, commonly used for switching applications. It has a total of 3 pins.
1. Gate (G): This pin controls the MOSFET's operation, allowing it to switch on or off by applying a voltage.
2. Drain (D): The current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This is the terminal through which the current exits the MOSFET when it is in the on state.
The FQT7N10LTF is designed for low on-resistance and high-speed switching in power applications, making it suitable for use in a variety of electronic circuits.
1. Gate (G): This pin controls the MOSFET's operation, allowing it to switch on or off by applying a voltage.
2. Drain (D): The current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This is the terminal through which the current exits the MOSFET when it is in the on state.
The FQT7N10LTF is designed for low on-resistance and high-speed switching in power applications, making it suitable for use in a variety of electronic circuits.
Manufacturer
The FQT7N10LTF is manufactured by Fairchild Semiconductor, a company known for producing a wide range of semiconductor products. Fairchild specializes in power management, analog, and discrete products, serving various industries including automotive, industrial, and consumer electronics. The FQT7N10LTF is specifically a N-channel MOSFET, which is commonly used in applications that require efficient power switching and amplification. Fairchild Semiconductor has a reputation for innovation and reliability in the semiconductor market, providing solutions that enhance performance and efficiency in electronic designs.
Application
The FQT7N10LTF is a N-channel MOSFET commonly used in various applications, including power management, switch mode power supplies, DC-DC converters, motor drivers, and high-speed switching applications. Its features enable efficient energy conversion and control in electronic circuits, making it suitable for consumer electronics, automotive systems, and industrial automation.
Equivalent
The FQT7N10LTF is an N-channel MOSFET. Equivalent products include the IRF740, FQP7N10, and STP7N10. Always confirm specifications like voltage, current, and package type to ensure compatibility in your specific application.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
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TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
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