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FQPF7N80C

Name: FQPF7N80C
Rating: 4.7 (12 reviews)

MOSFET N-CH 800V 6.6A TO220F

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Mfr。パート #FQPF7N80C
パッケージ TO-220-3
データシート FQPF7N80C DataSheet
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仕様

Package	Bulk,Tube
Series	QFET®
ProductStatus	Obsolete
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	800 V
Current-ContinuousDrain(Id)@25°C	6.6A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	1.9Ohm @ 3.3A, 10V
Vgs(th)(Max)@Id	5V @ 250µA
GateCharge(Qg)(Max)@Vgs	35 nC @ 10 V
Vgs(Max)	±30V
InputCapacitance(Ciss)(Max)@Vds	1680 pF @ 25 V
PowerDissipation(Max)	56W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	TO-220F-3

概要

Description

The FQPF7N80C is an N-channel MOSFET designed for high-efficiency power switching applications. With a voltage rating of 800V and a continuous drain current of up to 7A, it is ideal for use in power supplies, motor control, and other high-voltage circuits. The device features a low on-resistance (R_DS(on)), typically around 0.8 ohms, which minimizes power loss during operation and enhances thermal performance. Its fast switching capabilities allow for improved efficiency in high-frequency applications.
The FQPF7N80C is packaged in a TO-220 format, facilitating heat dissipation and easy mounting to heat sinks. Key specifications include a gate threshold voltage (V_GS(th)) of 2-4V and a maximum gate-source voltage (V_GS) of ±20V. This MOSFET offers reliable performance in demanding environments, making it a popular choice for engineers in power electronics design. Overall, the FQPF7N80C balances high voltage handling with excellent efficiency, making it suitable for a variety of applications.

Features

The FQPF7N80C is a high-performance power MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 800V, making it suitable for high-voltage applications.
2. Current Handling: The device can handle continuous drain current (I_D) up to 7A, which is beneficial for power management in circuits.
3. Low R_DS(on): It features a low on-resistance (R_DS(on)) of around 0.8 ohms, which minimizes conduction losses and improves efficiency.
4. Fast Switching: The FQPF7N80C is designed for fast switching, aiding in applications like switch-mode power supplies (SMPS) and inverters.
5. Thermal Characteristics: It includes a high thermal resistance, allowing for effective heat dissipation.
6. Package Type: Typically available in a TO-220 package, enabling easy mounting and heat sinking.
This combination of features makes the FQPF7N80C ideal for use in various electronic applications, including power supplies, motor drives, and other high-voltage circuits.

Package

The FQPF7N80C is typically packaged in a TO-220 form factor. This package type provides good thermal performance and is commonly used for power MOSFETs in various applications.

Pinout

The FQPF7N80C is an N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here allows current to flow from the drain to the source.
2. Drain (D): This is the terminal where the current enters the MOSFET. It connects to the load and allows current to flow when the device is on.
3. Source (S): This pin is the terminal through which current exits the MOSFET, typically connected to ground or the negative side of the power supply.
The FQPF7N80C is rated for high voltage (up to 800V) and is commonly used in power switching applications. It features low on-resistance and fast switching capabilities, making it suitable for various electronic circuits.

Manufacturer

The FQPF7N80C is manufactured by Fairchild Semiconductor, which is a part of ON Semiconductor. Fairchild Semiconductor is known for its production of semiconductor solutions, including power management ICs, discrete devices, and analog components. The company focuses on providing innovative technology to various industries, including automotive, industrial, and consumer electronics. Fairchild is recognized for its expertise in power semiconductor technologies, particularly in MOSFETs and IGBTs, which are essential for efficient energy management and various electronic applications.

Application

The FQPF7N80C is a high-voltage N-channel MOSFET primarily used in power management applications. Its key application areas include switch mode power supplies (SMPS), DC-DC converters, motor drives, and audio amplifiers. It is suitable for high-efficiency power switching due to its low on-resistance and fast switching capabilities, making it ideal for industrial, automotive, and consumer electronics.

Equivalent

The FQPF7N80C is a N-channel MOSFET with a voltage rating of 800V and a current rating of 7A. Equivalent products include the STP7N80Z, IRF840, and MTP8N80E. Always verify the specifications like V_DS, I_D, R_DS(on), and package type for compatibility in your application.