FQPF6N90C

画像は参照用のみです。

FQPF6N90C

MOSFET N-CH 900V 6A TO220F

100% オリジナル &新しい

出荷の準備ができている24時間

365日の保証

RFQおよびもっと割引を得る

仕様

Package Tube
Series QFET®
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 900 V
Current-ContinuousDrain(Id)@25°C 6A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 2.3Ohm @ 3A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 40 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 1770 pF @ 25 V
PowerDissipation(Max) 56W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220F-3

概要

Description

The FQPF6N90C is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high voltage and efficient switching applications. It boasts a maximum drain-source voltage (Vds) of 900V and a continuous drain current (Id) of 6A, making it suitable for power supplies, motor control, and other high-voltage circuits.
This MOSFET features a low on-resistance (Rds(on)), which minimizes energy losses during operation and enhances overall efficiency. Its gate threshold voltage (Vgs(th)) allows for easy drive with standard logic levels, contributing to its versatility in various electronic designs.
The FQPF6N90C is housed in a TO-220 package, facilitating heat dissipation and ease of mounting on heat sinks. Overall, it is a reliable component for applications requiring robust performance in high-voltage environments.

Features

The FQPF6N90C is a N-channel MOSFET designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 900V, making it suitable for high-voltage applications.
2. Continuous Drain Current: Capable of handling a continuous drain current (I_D) of up to 6A, allowing it to manage substantial loads.
3. Low R_DS(on): Features a low on-resistance (R_DS(on)) of approximately 0.75 ohms, which minimizes conduction losses and improves efficiency.
4. Fast Switching: Offers rapid switching capabilities, making it ideal for applications in power supplies and inverters.
5. Thermal Stability: Designed with a high maximum junction temperature (T_j) of 150°C, ensuring reliability under thermal stress.
6. TO-220 Package: Packaged in a TO-220 form factor, facilitating effective heat dissipation and easy handling in circuit designs.
These features make the FQPF6N90C suitable for various applications, including industrial power systems, consumer electronics, and renewable energy systems.

Package

The FQPF6N90C is typically packaged in a TO-220 package type. This package is known for its durability and effective heat dissipation, making it suitable for power applications.

Pinout

The FQPF6N90C is an N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET's operation. A voltage applied to the gate allows current to flow between the drain and source.

2. Drain (D): This pin is where the current exits the MOSFET when it is in the 'ON' state. It connects to the load in the circuit.
3. Source (S): This pin is connected to the ground or the lower potential in the circuit. It serves as the return path for the current flowing through the drain.
The FQPF6N90C is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 900V and a continuous drain current (I_D) of 6A. Its capabilities make it suitable for various switching and amplification applications in power electronics.

Manufacturer

The FQPF6N90C is manufactured by ON Semiconductor, a company that specializes in semiconductor components and solutions. ON Semiconductor is a global supplier that focuses on energy-efficient electronics, providing a wide range of products including power management, analog, logic, timing, and RF components. The company serves various industries, such as automotive, communications, computing, consumer electronics, and industrial applications. With a commitment to innovation and sustainability, ON Semiconductor aims to deliver advanced technologies and solutions that help customers achieve their performance and efficiency goals.

Application

The FQPF6N90C is an N-channel MOSFET used in various applications, including power supplies, motor control, switching regulators, and inverters. Its high voltage and current handling capabilities make it suitable for use in consumer electronics, industrial automation, and automotive systems. Additionally, it is utilized in audio amplifiers and LED lighting applications for efficient power management.

Equivalent

The FQPF6N90C is a N-channel MOSFET used in power applications. Equivalent products include:
1. IRF840
2. MTP6N90E
3. STP6NK90Z
4. AUIRF840
5. RFP30N90
Always check the specific datasheets for voltage, current ratings, and package compatibility before substitution.

出荷

出荷方法私たち

DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。


出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

支払い

Payment Methods

支払い期間は100％前払いです。

現在、下記の支払い方法のみを受け入れています。:

1. ペイパル

2. クレジット・デビットカード

3. ワイヤー 転送

類似