画像は参照用のみです。
FQPF12N60C
MOSFET N-CH 600V 12A TO220F
- メーカー
- Mfr。パート #FQPF12N60C
- パッケージ
- データシート
- 在庫中2165
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Series | QFET® |
| Part Status | Obsolete |
| Base Product Number | FQPF1 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2290 pF @ 25 V |
| Power Dissipation (Max) | 51W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220F-3 |
| Package | TO-220-3 Full Pack |
| Packaging | Tube |
概要
Description
The FQPF12N60C is a N-channel MOSFET designed for high-efficiency power switching applications. It features a maximum drain-source voltage (Vds) of 600V and a continuous drain current (Id) of 12A, making it suitable for high-voltage and high-current circuits. Its low on-resistance (Rds(on)) of 0.18Ω at Vgs = 10V enhances efficiency by reducing power loss during operation.
This MOSFET is commonly used in applications such as power supplies, motor control, and other circuits requiring efficient switching. The device is characterized by fast switching speeds, facilitating high-frequency operation. Additionally, its robust package options, typically in TO-220 or TO-247 formats, allow for effective heat dissipation.
The FQPF12N60C is often selected for applications in renewable energy systems, lighting systems, and various industrial automation processes where reliability and performance are critical. Proper thermal management and appropriate gate drive circuits are essential for optimal performance in practical applications.
This MOSFET is commonly used in applications such as power supplies, motor control, and other circuits requiring efficient switching. The device is characterized by fast switching speeds, facilitating high-frequency operation. Additionally, its robust package options, typically in TO-220 or TO-247 formats, allow for effective heat dissipation.
The FQPF12N60C is often selected for applications in renewable energy systems, lighting systems, and various industrial automation processes where reliability and performance are critical. Proper thermal management and appropriate gate drive circuits are essential for optimal performance in practical applications.
Features
The FQPF12N60C is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage circuits.
2. Current Rating: The maximum continuous drain current (I_D) is 12A, allowing it to handle significant loads.
3. R_DS(on): The on-resistance is low (typically around 0.18 ohms), which reduces power loss and enhances efficiency during operation.
4. Gate Threshold Voltage: It has a gate threshold voltage (V_GS(th)) of 2-4V, facilitating easier drive with standard logic levels.
5. Package Type: Available in a TO-220 package, it provides excellent thermal performance and is easy to mount.
6. Fast Switching: Designed for fast switching applications, it is ideal for use in power supplies, inverters, and motor drivers.
Due to its robust specifications, the FQPF12N60C is widely used in industrial, automotive, and renewable energy applications.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage circuits.
2. Current Rating: The maximum continuous drain current (I_D) is 12A, allowing it to handle significant loads.
3. R_DS(on): The on-resistance is low (typically around 0.18 ohms), which reduces power loss and enhances efficiency during operation.
4. Gate Threshold Voltage: It has a gate threshold voltage (V_GS(th)) of 2-4V, facilitating easier drive with standard logic levels.
5. Package Type: Available in a TO-220 package, it provides excellent thermal performance and is easy to mount.
6. Fast Switching: Designed for fast switching applications, it is ideal for use in power supplies, inverters, and motor drivers.
Due to its robust specifications, the FQPF12N60C is widely used in industrial, automotive, and renewable energy applications.
Package
The FQPF12N60C is typically packaged in a TO-220 format, which is a standard package for power MOSFETs. This package type provides good thermal performance and is suitable for high-power applications.
Pinout
The FQPF12N60C is an N-channel MOSFET with a pin count of 3. The pins are typically identified as follows:
1. Gate (G) - The control terminal that regulates the flow of current between the drain and source.
2. Drain (D) - The terminal through which the current flows out of the MOSFET when it is turned on.
3. Source (S) - The terminal through which the current enters the MOSFET.
This MOSFET is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) rating of 12A. It is commonly used in power conversion and switching applications.
1. Gate (G) - The control terminal that regulates the flow of current between the drain and source.
2. Drain (D) - The terminal through which the current flows out of the MOSFET when it is turned on.
3. Source (S) - The terminal through which the current enters the MOSFET.
This MOSFET is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) rating of 12A. It is commonly used in power conversion and switching applications.
Manufacturer
The FQPF12N60C is manufactured by Fairchild Semiconductor, which is a company specializing in the design and production of semiconductor solutions. Fairchild Semiconductor focuses on power management, analog, and mixed-signal devices, as well as high-performance switching and discrete components. Established in 1957, the company has a strong reputation for innovation and quality in the semiconductor industry. In 2016, Fairchild Semiconductor was acquired by ON Semiconductor, expanding its product offerings and market reach. Today, ON Semiconductor continues to produce and support Fairchild's legacy products, including the FQPF12N60C, which is a high-voltage, N-channel MOSFET used in various applications, such as power supplies and motor control.
Application
The FQPF12N60C is a high-voltage N-channel MOSFET commonly used in applications such as switch-mode power supplies (SMPS), motor drives, and inverters. It is suitable for power converters, lighting control systems, and various industrial automation applications due to its high-speed switching capabilities and efficiency. Additionally, it can be utilized in electronic ballasts and other power management systems.
Equivalent
Equivalent products to the FQPF12N60C MOSFET include the STP12NK60Z, IRF120, and MTP12N60E. Ensure to check the specifications, such as voltage rating, current rating, and RDS(on), to confirm compatibility for your specific application.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
類似
-
MX25V1635FZNQ03
Macronix
-
MX25V5126FM1I
Macronix
-
MX25R3235FZNIL0
Macronix
-
MX25L25673GMI-08G
Macronix
-
MX25L25673GMI-10G
Macronix
-
MX29GL512FHXFI-11..
Macronix
-
MX25U25643GZNI00
Macronix
-
MX25L2006EM1I-12G
Macronix
-
MX25U6435FM2I-10G
Macronix
-
MX25L12833FZ2I-10..
Macronix
-
MX25L12833FZNI-10..
Macronix
-
MX29F040CQI-70G
Macronix