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FQP34N20
MOSFET N-CH 200V 31A TO220-3
- メーカー
- Mfr。パート #FQP34N20
- パッケージ TO-220-3
- データシート FQP34N20 DataSheet
- 在庫中3028
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仕様
| Package | Bulk,Tube |
| Series | QFET® |
| ProductStatus | Last Time Buy |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 31A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 75mOhm @ 15.5A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 78 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 3100 pF @ 25 V |
| PowerDissipation(Max) | 180W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220-3 |
概要
Description
The FQP34N20 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It features a low on-resistance (R_DS(on)), enabling it to conduct significant current with minimal power loss. The device is rated for a maximum drain-source voltage of 200V and can handle continuous drain currents up to 34A, making it suitable for power electronics, such as converters, power supplies, and motor control applications.
Key specifications include a gate threshold voltage typically around 2-4V, allowing it to be driven by low-voltage logic levels. The FQP34N20's fast switching capabilities contribute to higher efficiency in high-frequency applications. The package is usually TO-220, providing good thermal performance for heat dissipation.
Overall, the FQP34N20 is favored in various applications due to its robust performance, reliability, and versatility in handling high-voltage and high-current scenarios.
Key specifications include a gate threshold voltage typically around 2-4V, allowing it to be driven by low-voltage logic levels. The FQP34N20's fast switching capabilities contribute to higher efficiency in high-frequency applications. The package is usually TO-220, providing good thermal performance for heat dissipation.
Overall, the FQP34N20 is favored in various applications due to its robust performance, reliability, and versatility in handling high-voltage and high-current scenarios.
Features
The FQP34N20 is an N-channel MOSFET designed for high-speed switching applications, particularly in power electronics. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 200V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 34A, allowing it to drive significant loads.
3. R_DS(on): It offers a low on-resistance of approximately 0.047 ohms, which minimizes power loss during operation and enhances efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easy drive with low-voltage logic levels.
5. Package Type: Typically available in TO-220 or similar packages, it ensures good thermal performance.
6. Applications: Commonly used in power supplies, motor drivers, and other switching applications.
These features make the FQP34N20 a versatile choice for engineers looking for reliable performance in power management solutions.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 200V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 34A, allowing it to drive significant loads.
3. R_DS(on): It offers a low on-resistance of approximately 0.047 ohms, which minimizes power loss during operation and enhances efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easy drive with low-voltage logic levels.
5. Package Type: Typically available in TO-220 or similar packages, it ensures good thermal performance.
6. Applications: Commonly used in power supplies, motor drivers, and other switching applications.
These features make the FQP34N20 a versatile choice for engineers looking for reliable performance in power management solutions.
Package
The FQP34N20 is typically packaged in a TO-220 package type, which is a metal-tabbed, insulated package designed for power MOSFET applications. This package allows for efficient heat dissipation and is suitable for use in various electronic circuits.
Pinout
The FQP34N20 is an N-channel MOSFET with a total of 5 pins. The pin configuration and functions are as follows:
1. Gate (G) - Pin 1: This is the control terminal that turns the MOSFET on or off by applying a voltage.
2. Drain (D) - Pin 2: This terminal connects to the load and allows current to flow through the MOSFET when it is turned on.
3. Source (S) - Pin 3: This terminal is connected to ground or a lower potential than the drain. It is the exit point for the current flowing through the MOSFET.
4. Drain (D) - Pin 4: This is an additional drain terminal for symmetrical applications.
5. Source (S) - Pin 5: This is an additional source terminal for symmetrical applications.
This MOSFET is commonly used in power switching applications due to its high efficiency and capacity to handle significant current and voltage levels.
1. Gate (G) - Pin 1: This is the control terminal that turns the MOSFET on or off by applying a voltage.
2. Drain (D) - Pin 2: This terminal connects to the load and allows current to flow through the MOSFET when it is turned on.
3. Source (S) - Pin 3: This terminal is connected to ground or a lower potential than the drain. It is the exit point for the current flowing through the MOSFET.
4. Drain (D) - Pin 4: This is an additional drain terminal for symmetrical applications.
5. Source (S) - Pin 5: This is an additional source terminal for symmetrical applications.
This MOSFET is commonly used in power switching applications due to its high efficiency and capacity to handle significant current and voltage levels.
Manufacturer
The FQP34N20 is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor Corporation. Fairchild Semiconductor was originally established in 1957 and is known for its production of high-performance semiconductor products. The company specializes in various components, including MOSFETs, diodes, and analog devices, catering to a wide range of applications across industries such as automotive, industrial, and consumer electronics. Fairchild has a strong reputation for innovation and quality in the semiconductor market.
Application
The FQP34N20 is a N-channel MOSFET commonly used in power applications, including power supplies, motor control, and switching circuits. Its high voltage rating (200V) and low on-resistance make it suitable for high-efficiency switching applications, such as DC-DC converters and class D audio amplifiers. It can also be utilized in automotive applications, like electric vehicle control systems and battery management circuits.
Equivalent
The FQP34N20 is a N-channel MOSFET with a maximum drain-source voltage of 200V and a continuous drain current of 34A. Equivalent products include:
1. IRF3205
2. STP34NF20
3. AOD404
4. NTD30N20
Always verify specifications like RDS(on), VGS, and current ratings to ensure compatibility.
1. IRF3205
2. STP34NF20
3. AOD404
4. NTD30N20
Always verify specifications like RDS(on), VGS, and current ratings to ensure compatibility.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
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TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
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