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FQD8P10TM
MOSFET P-CH 100V 6.6A DPAK
- メーカー
- Mfr。パート #FQD8P10TM
- パッケージ
- データシート FQD8P10TM DataSheet
- 在庫中22969
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仕様
| Supplier | onsemi |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | QFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 6.6A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 530mOhm @ 3.3A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 15 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 470 pF @ 25 V |
| PowerDissipation(Max) | 2.5W (Ta), 44W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-252AA |
概要
Description
FQD8P10TM is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power electronics applications. It features a low on-resistance, which minimizes power losses during operation, making it suitable for high-efficiency switching applications such as power supplies, inverters, and motor drivers.
Typically, this MOSFET can handle a maximum drain-source voltage of 60V and a continuous drain current of up to 8A, depending on the thermal management. With fast switching speeds, it is ideal for applications requiring rapid on/off cycling.
FQD8P10TM is housed in a TO-220 package, facilitating effective heat dissipation. The component is favored in designs where space is limited but high performance is crucial. Its robust nature and versatility make it a common choice among engineers for efficient and reliable circuit designs. Proper heat sinking and thermal management practices are recommended to ensure the device operates within safe limits under load.
Typically, this MOSFET can handle a maximum drain-source voltage of 60V and a continuous drain current of up to 8A, depending on the thermal management. With fast switching speeds, it is ideal for applications requiring rapid on/off cycling.
FQD8P10TM is housed in a TO-220 package, facilitating effective heat dissipation. The component is favored in designs where space is limited but high performance is crucial. Its robust nature and versatility make it a common choice among engineers for efficient and reliable circuit designs. Proper heat sinking and thermal management practices are recommended to ensure the device operates within safe limits under load.
Features
The FQD8P10TM is an N-channel MOSFET transistor designed for efficient switching and amplification in various electronic applications. Key features include:
1. Voltage Rating: It typically supports a drain-source voltage (Vds) of 100V, making it suitable for high-voltage applications.
2. Current Rating: With a continuous drain current (Id) capacity of 8A, it can handle significant loads.
3. Low Rds(on): The on-resistance (Rds(on)) is low, which minimizes power loss and improves efficiency during operation.
4. Fast Switching Speed: Optimized for high-frequency switching, making it ideal for power supply and converter circuits.
5. Thermal Stability: Designed with good thermal performance, allowing for operation in various temperature environments.
6. Package Type: Typically available in TO-220 or similar packages for easy heat dissipation and mounting flexibility.
These characteristics make the FQD8P10TM a reliable choice for power management, motor control, and other demanding electronic circuits.
1. Voltage Rating: It typically supports a drain-source voltage (Vds) of 100V, making it suitable for high-voltage applications.
2. Current Rating: With a continuous drain current (Id) capacity of 8A, it can handle significant loads.
3. Low Rds(on): The on-resistance (Rds(on)) is low, which minimizes power loss and improves efficiency during operation.
4. Fast Switching Speed: Optimized for high-frequency switching, making it ideal for power supply and converter circuits.
5. Thermal Stability: Designed with good thermal performance, allowing for operation in various temperature environments.
6. Package Type: Typically available in TO-220 or similar packages for easy heat dissipation and mounting flexibility.
These characteristics make the FQD8P10TM a reliable choice for power management, motor control, and other demanding electronic circuits.
Package
The FQD8P10TM is typically packaged in a TO-220 configuration, which is commonly used for power MOSFETs. This package type allows for efficient heat dissipation and is suitable for various applications requiring high power handling.
Pinout
The FQD8P10TM is an N-channel MOSFET from ON Semiconductor, featuring a TO-220 package. It has a total of three pins.
1. Gate (G): This pin is used to control the MOSFET. It determines whether the device is ON or OFF by applying a voltage.
2. Drain (D): This pin is the output terminal; it connects to the load. Current flows from the Drain to the Source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or negative side of the power supply, completing the circuit when the device is on.
The FQD8P10TM is designed for high-efficiency power switching applications, capable of handling significant current and voltage levels, making it suitable for various electronic circuits.
1. Gate (G): This pin is used to control the MOSFET. It determines whether the device is ON or OFF by applying a voltage.
2. Drain (D): This pin is the output terminal; it connects to the load. Current flows from the Drain to the Source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or negative side of the power supply, completing the circuit when the device is on.
The FQD8P10TM is designed for high-efficiency power switching applications, capable of handling significant current and voltage levels, making it suitable for various electronic circuits.
Manufacturer
The FQD8P10TM is manufactured by Fairchild Semiconductor, a company known for its production of a wide range of semiconductor products. Fairchild Semiconductor specializes in developing and manufacturing various electronic components, including power transistors, diodes, and integrated circuits, catering to applications in industries such as automotive, consumer electronics, and telecommunications. Founded in 1957, Fairchild has been recognized for its innovation and contribution to the semiconductor industry, particularly in the development of analog and digital devices. In 2016, Fairchild was acquired by ON Semiconductor Corporation, which further expanded its portfolio and market presence.
Application
The FQD8P10TM is a power MOSFET commonly used in various applications such as power management, DC-DC converters, motor control, and LED lighting. Its features make it suitable for high-efficiency switching applications in consumer electronics, automotive systems, and renewable energy solutions like solar inverters.
Equivalent
The FQD8P10TM is a P-channel MOSFET. Equivalent products include the FQP8P10, IRF9540, and STP8NK80Z. Always verify specifications like voltage, current, and RDS(on) when considering alternatives.
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